Patent application number | Description | Published |
20080302963 | SHEET BEAM-TYPE TESTING APPARATUS - An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means | 12-11-2008 |
20080308729 | Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former - A substrate inspection apparatus | 12-18-2008 |
20090032708 | Inspection system by charged particle beam and method of manufacturing devices using the system - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-05-2009 |
20090039262 | ELECTRON BEAM APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE APPARATUS - The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals. | 02-12-2009 |
20090050822 | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus - The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. | 02-26-2009 |
20110104830 | APPARATUS FOR INSPECTION WITH ELECTRON BEAM, METHOD FOR OPERATING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING FORMER - A substrate inspection apparatus | 05-05-2011 |
20120032079 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-09-2012 |
20140034831 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-06-2014 |
Patent application number | Description | Published |
20080315090 | Objective lens, electron beam system and method of inspecting defect - An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis. | 12-25-2008 |
20130032716 | ELECTRON BEAM APPARATUS AND A DEVICE MANUFACTURING METHOD BY USING SAID ELECTRON BEAM APPARATUS - An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction. | 02-07-2013 |
20140097352 | Charged practicles beam apparatus and charged particles beam apparatus design method - Problems to be solved: To obtain higher brightness than Langmuir limit. Adjust brightness to the optimum value. | 04-10-2014 |
20140319346 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 10-30-2014 |
20140367570 | SUBSTRATE INSPECTION METHOD AND A SUBSTRATE PROCESSING METHOD - There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system. | 12-18-2014 |