| Patent application number | Description | Published |
|---|
| 20080282971 | NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS - The apparatus has a crucible for storing a solution; an inner container | 11-20-2008 |
| 20090000538 | SINGLE CRYSTAL GROWING METHOD - In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material. | 01-01-2009 |
| 20090000542 | APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material. | 01-01-2009 |
| 20090013924 | PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced using a growth solution | 01-15-2009 |
| 20090038539 | PROCESS FOR PRODUCING SINGLE CRYSTAL - A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel | 02-12-2009 |
| 20090074963 | OXIDE FILMS, A METHOD OF PRODUCING THE SAME AND STRUCTURES HAVING THE SAME - An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole | 03-19-2009 |
| 20090078193 | PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR - A growth apparatus is used having a plurality of crucibles | 03-26-2009 |
| 20090293805 | Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal - It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium. | 12-03-2009 |
| 20100012020 | METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced on a seed crystal substrate | 01-21-2010 |
| 20100247418 | Method for producing group III nitride semiconductor - An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge. | 09-30-2010 |
| 20110259261 | REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL - It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved. | 10-27-2011 |
| 20110274609 | Group 3B nitride crystal substrate - A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less. | 11-10-2011 |
| 20110287222 | Group 3B nitride crystal - A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided. | 11-24-2011 |
| 20120111264 | METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL - A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface | 05-10-2012 |
| 20120137961 | METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME - Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall. | 06-07-2012 |
| 20140014028 | Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same - A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate | 01-16-2014 |
| 20140026809 | Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same - A seed crystal substrate | 01-30-2014 |
| 20140054605 | Composite Substrates, Light Emitting Devices and a Method of Producing Composite Substrates - A plurality of protrusions | 02-27-2014 |
| 20140103362 | Composite Substrates, A Method of Producing the Same, A Method of Producing Functional Layers Made of Nitrides of Group 13 Elements, and Functional Devices - A composite substrate | 04-17-2014 |
| 20140147953 | Method for Peeling Group 13 Element Nitride Film | 05-29-2014 |
| 20140158978 | Semiconductor Light-Emitting Element and Laminate Containing Same - A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer. | 06-12-2014 |
| 20140197420 | Films of Nitrides of Group 13 Elements and Layered Body Including the Same | 07-17-2014 |
| 20140264429 | Composite Substrates and Functional Devices - Protrusions | 09-18-2014 |
| 20140305369 | Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions - It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element. | 10-16-2014 |
