Patent application number | Description | Published |
20100096256 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100098873 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100200954 | ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD - In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions. | 08-12-2010 |
20100267224 | ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS - Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon. | 10-21-2010 |
20100297347 | SUBSTRATE SUPPORT HAVING SIDE GAS OUTLETS AND METHODS - A substrate support for a process chamber comprises an electrostatic chuck having a receiving surface to receive the substrate and a gas distributor baseplate below the electrostatic chuck. The gas distributor baseplate comprises a circumferential sidewall having a plurality of gas outlets that are spaced apart from one another to introduce a process gas into the process chamber from around the perimeter of the substrate and in a radially outward facing direction. | 11-25-2010 |
20100297854 | HIGH THROUGHPUT SELECTIVE OXIDATION OF SILICON AND POLYSILICON USING PLASMA AT ROOM TEMPERATURE - Methods of fabricating an oxide layer on a semiconductor structure are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure includes providing a substrate having one or more metal-containing layers and one or more non metal-containing layers to a substrate support in a plasma reactor; introducing a first process gas into the plasma reactor, wherein the first process gas comprises hydrogen (H | 11-25-2010 |
20110092058 | ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD - In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region. | 04-21-2011 |
20110277932 | ELECTROSTATIC CHUCK CLEANING DURING SEMICONDUCTOR SUBSTRATE PROCESSING - Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station. | 11-17-2011 |
20140268080 | PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer. | 09-18-2014 |
20140268082 | VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist. | 09-18-2014 |
20140272684 | EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR - A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof. | 09-18-2014 |