Patent application number | Description | Published |
20130032891 | METHOD OF MANUFACTURING AN IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS AND IC COMPRISING A PLURALITY OF BIPOLAR TRANSISTORS - A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a base layer stack over the substrate; forming a first emitter cap layer of a first effective thickness over the base layer stack in the areas of the first type bipolar transistor; forming a second emitter cap layer of a second effective thickness different from the first effective thickness over the base layer stack in the areas of the second type bipolar transistor; and forming an emitter over the emitter cap layer of each of the bipolar transistors. An IC in accordance with this method. | 02-07-2013 |
20130056855 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation regions separated by an active region comprising a collector; forming a base layer stack over said substrate; forming a migration layer having a first migration temperature and an etch stop layer; forming a base contact layer having a second migration temperature; etching an emitter window in the base contact layer, thereby forming cavities extending from the emitter window; and exposing the resultant structure to the first migration temperature in a hydrogen atmosphere, thereby filling the cavities with the migration layer material. | 03-07-2013 |
20130087799 | BIPOLAR TRANSISTOR MANUFACTURING METHOD, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 04-11-2013 |
20140084417 | METAL-INSULATOR-METAL (MIM) CAPACITOR - There is disclosed a metal-insulator-metal, MIM, capacitor. The MIM capacitor comprises a MIM stack formed within an interconnect metal layer. The interconnect metal layer is utilised as an electrical connection to a metal layer of the MIM stack. | 03-27-2014 |
20140162426 | Bipolar transistor manufacturing method, bipolar transistor and integrated circuit - Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate ( | 06-12-2014 |
20150041862 | METHOD OF MANUFACTURING IC COMPRISING A BIPOLAR TRANSISTOR AND IC - Disclosed is a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate ( | 02-12-2015 |