Patent application number | Description | Published |
20090304594 | Methods for Predicting Treatment Response Based On the Expression Profiles of Protein and Transcription Biomarkers - The invention disclosed herein describes novel biomarkers useful for risk assessment, screening, prognosis and selection and monitoring of therapy for HDAC mediated cell proliferative disorders. In particular, the invention provides the identities of three particular proteins whose expression patterns are strongly predictive of a particular patient's treatment outcome, e.g., non-responsiveness to SAHA. The expression profile, or pattern, whether embodied in nucleic acid expression, protein expression, or other expression formats will find use in identifying and selecting patients afflicted with a particular HDAC mediated cancer who are likely to be non-responsive to SAHA-based therapy and thus candidates for other treatments. | 12-10-2009 |
20100280987 | METHODS AND GENE EXPRESSION SIGNATURE FOR ASSESSING RAS PATHWAY ACTIVITY - Methods, biomarkers, and expression signatures are disclosed for assessing the regulation status of RAS pathway signaling in a cell sample or subject. More specifically, several aspects of the invention provide a set of genes which can be used as biomarkers and gene signatures for evaluating RAS pathway deregulation status in a sample; classifying a cell sample as having a deregulated or regulated RAS signaling pathway; determining whether an agent modulates the RAS signaling pathway in sample; predicting response of a subject to an agent that modulates the RAS signaling pathway; assigning treatment to a subject; and evaluating the pharmacodynamic effects of cancer therapies designed to regulate RAS pathway signaling. | 11-04-2010 |
20100284915 | GENES ASSOCIATED WITH CHEMOTHERAPY RESPONSE AND USES THEREOF - The invention provides molecular markers that are associated with responsiveness of a cancer patient to a chemotherapy treatment, and methods and computer systems for determining such responsiveness based on measurements of these molecular markers. The present invention also provides methods and compositions for enhancing the efficacy of chemotherapies in patients by modulating the expression or activity of genes encoding these molecular markers and/or their encoded proteins. | 11-11-2010 |
20110015869 | METHODS AND GENE EXPRESSION SIGNATURE FOR ASSESSING GROWTH FACTOR SIGNALING PATHWAY REGULATION STATUS - Methods, biomarkers, and expression signatures are disclosed for assessing the regulation status of growth factor pathway signaling in a cell sample or subject. More specifically, several aspects of the invention provide a set of genes which can be used as biomarkers and gene signatures for evaluating growth factor pathway deregulation status in a sample; classifying a cell sample as having a deregulated or regulated growth factor signaling pathway; determining whether an agent modulates the growth factor signaling pathway in sample; predicting response of a subject to an agent that modulates the growth factor signaling pathway; assigning treatment to a subject; and predicting evaluating the pharmacodynamic effects of cancer therapies designed to regulate growth factor pathway signaling. | 01-20-2011 |
20130034540 | Immune Gene Signatures in Cancer - This invention relates to methods for selecting a treatment, treating, and predicting survival time in subjects with cancer, such as colorectal cancer, based on tumor expression levels of chemokines, cytotoxic genes, and/or dendritic cell genes. | 02-07-2013 |
20140030255 | METHODS OF PREDICTING CANCER CELL RESPONSE TO THERAPEUTIC AGENTS - In one aspect, methods, markers, and expression signatures are disclosed for assessing the degree to which a cell sample has epithelial cell-like properties or mesenchymal cell-like properties. In another aspect, methods are provided for predicting whether a subject with cancer will respond to treatment with an agent, based on whether the cancer is classified as having a high or low EMT Signature Score. | 01-30-2014 |
20140031251 | METHODS OF CLASSIFYING HUMAN SUBJECTS WITH REGARD TO CANCER PROGNOSIS - In one aspect, methods, markers, and expression signatures are disclosed for assessing the degree to which a cell sample has epithelial cell-like properties or mesenchymal cell-like properties. In another aspect, methods are provided for predicting cancer patient prognosis based on whether the cancer is classified as having a high or low EMT Signature Score. | 01-30-2014 |
20140304845 | ALZHEIMER'S DISEASE SIGNATURE MARKERS AND METHODS OF USE - Methods, biomarkers, and expression signatures are disclosed for assessing the disease progression of Alzheimer's disease (AD). In one embodiment, BioAge (biological age), NdStress (neurodegenerative stress), Alz (Alzheimer), and Inflame (inflammation) are used as biomarkers of AD progression. In another aspect, the invention comprises a gene signature for evaluating disease progression. In still another embodiment, methods for evaluating disease progression are provided. In yet another embodiment, the invention can be used to identify animal models for use in the development and evaluation of therapeutics for the treatment of AD. | 10-09-2014 |
Patent application number | Description | Published |
20090053491 | Coated Substrates and Methods for Their Preparation - Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm | 02-26-2009 |
20100006859 | Method of Manufacturing Substrates Having Improved Carrier Lifetimes - This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon-containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. | 01-14-2010 |
20100178490 | ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON - The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10 | 07-15-2010 |
20110073874 | METHOD OF REDUCING MEMORY EFFECTS IN SEMICONDUCTOR EPITAXY - A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction chamber between growth steps. | 03-31-2011 |
20120114545 | Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes - This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii). | 05-10-2012 |
20140070234 | HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES ON SIC - 4H SiC epiwafers with thickness of 50-100 μm are grown on 4° off-axis substrates. Surface morphological defect density in the range of 2-6 cm | 03-13-2014 |
20140117380 | FLAT SIC SEMICONDUCTOR SUBSTRATE - Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer. | 05-01-2014 |
20140203297 | Method of Manufacturing Substrates Having Improved Carrier Lifetimes - This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. This invention also relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon-containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000° C. but less than 2000° C.; with the proviso that the pressure within the reaction chamber is maintained in the range of 0.1 to 760 torr. | 07-24-2014 |
20140220296 | SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY - A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal. | 08-07-2014 |
20140220298 | SIC CRYSTAL WITH LOW DISLOCATION DENSITY - A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system. | 08-07-2014 |
20140220325 | METHOD TO REDUCE DISLOCATIONS IN SIC CRYSTAL GROWTH - A method of forming an SiC crystal including placing a seed crystal of SiC in an insulated graphite container; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the container into the furnace; heating a furnace to a temperature from about 2,000° C. to about 2,500° C.; evacuating the furnace to a pressure from about 0.1 Torr and about 100 Torr; filling the furnace with an inert gas; and introducing dopant gas into the furnace with a controlled flow so as to form a plurality of stratified layers wherein each layer has dopant concentration different from a layer directly below and a layer directly above it. A 4H-SiC crystal made by the method. A 4H-SiC substrate cut from the SiC crystal made from the method. | 08-07-2014 |