Patent application number | Description | Published |
20080199123 | ULTRAFAST GE/SI RESONATOR-BASED MODULATORS FOR OPTICAL DATA COMMUNICATIONS IN SILICON PHOTONICS - An optical modulator structure includes at least two waveguide structures for inputting and outputting an optical signal. At least one ring resonator structure provides coupling between the at least two waveguide structures. The at least one ring resonator structure includes Ge or SiGe. | 08-21-2008 |
20080253728 | Microphotonic waveguide including core/cladding interface layer - The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer. | 10-16-2008 |
20090015906 | EXTRINSIC GAIN LASER AND OPTICAL AMPLIFICATION DEVICE - An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped. | 01-15-2009 |
20090093074 | Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches - A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO | 04-09-2009 |
20100091358 | EXTRINSIC GAIN LASER AND OPTICAL AMPLIFICATION DEVICE - An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped. | 04-15-2010 |
20100187419 | THERMO-OPTIC INFRARED PIXEL AND FOCAL PLANE ARRAY - A surface plasmon polariton (SPP) pixel structure is provided. The SPP pixel structure includes a coupling structure that couples the probing light into the SPP mode by matching the in-plane wave vector by changing the refractive index of the coupling structure using thermo-optic effects to vary the coupling strength of the probing light into the SPP mode. An absorber layer is positioned on the coupling structure for absorbing incident infrared/thermal radiation being detected. | 07-29-2010 |
20100187530 | PHOTOCONDUCTORS FOR MID-/FAR-IR DETECTION - An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions. | 07-29-2010 |
20100238536 | INTEGRATED SILICON/SILICON-GERMANIUM MAGNETO-OPTIC ISOLATOR - A magneto-optical isolator device is provided. The isolator device includes a substrate and a bottom cladding layer that is formed on the substrate. An optical resonator structure is formed on the bottom cladding layer. The resonator structure includes crystalline or amorphous diamagnetic silicon or silicon-germanium so as to provide non-reciprocal optical isolation. A top cladding layer is formed on the resonator structure. One or more magnetic layers positioned on the top cladding layer or between the top cladding or bottom cladding layers and the optical resonator structure. | 09-23-2010 |
20100307579 | Pseudo-Periodic Structure for Use in Thin Film Solar Cells - A method of manufacturing a photovoltaic cell includes providing an active absorption layer, forming a pseudo-periodic grating adjacent to the active absorption layer, and forming a reflector adjacent to the pseudo-periodic grating. A photovoltaic cell includes an active absorption layer, a pseudo-periodic grating adjacent to the active absorption layer, and a reflector adjacent to the pseudo-periodic grating. | 12-09-2010 |
20110127547 | CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES - A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements. | 06-02-2011 |
20110311180 | Glassy Surface Smoothing Layer for Integrated Waveguide - An integrated optical waveguide includes a substrate, a waveguide under-cladding layer disposed on the substrate, and a waveguide core, having top and sidewall surfaces, disposed on the under-cladding layer. A glassy surface smoothing layer disposed on the waveguide core top surface and sidewall surfaces and has a refractive index, relative to a refractive index of the waveguide core, that enables guided optical transmission through the waveguide core and the glassy surface smoothing layer. In fabrication of the optical waveguide, a waveguide under-cladding layer is formed on a substrate and a waveguide core having sidewall surfaces and a top surface is formed on the under-cladding layer. A liquid suspension comprising particles of a glassy material is applied on the top and sidewall surfaces of the waveguide core. The applied liquid glassy particle suspension is heated to form a glassy surface smoothing layer on the waveguide core top surface and sidewall surfaces. | 12-22-2011 |
20110316018 | ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES - A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV. | 12-29-2011 |
20120025195 | Confined Lateral Growth of Crystalline Material - In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet. | 02-02-2012 |
20130039618 | PATTERNED NON-RECIPROCAL OPTICAL RESONATOR - A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity. | 02-14-2013 |
20130243383 | Athermal Photonic Waveguide With Refractive Index Tuning - In a photonic waveguide, there is provided an undercladding layer and a waveguide core, having a cross-sectional height and width, that is disposed on the undercladding layer. The waveguide core comprises a waveguide core material having a thermo-optic coefficient. A refractive index tuning cladding layer is disposed on top of the waveguide core. The refractive index tuning cladding layer comprises a refractive index tuning cladding material having an adjustable refractive index and an absorption length at a refractive index tuning radiation wavelength. A thermo-optic coefficient compensation cladding layer is disposed on top of the refractive index tuning cladding layer. The thermo-optic coefficient compensation cladding layer comprises a thermo-optic coefficient compensation material having a thermo-optic coefficient that is of opposite sign to the thermo-optic coefficient of the waveguide core material. The thermo-optic coefficient compensation cladding layer provides at least partial compensation for the waveguide core thermo-optic coefficient. | 09-19-2013 |
20140264030 | METHODS AND APPARATUS FOR MID-INFRARED SENSING - A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum (e.g., between λ=1.3 μm and λ=6.5 μm for silicon and λ=1.3 μm and λ=12.0 μm for germanium), to probe the absorption spectrum of the fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer. | 09-18-2014 |