Patent application number | Description | Published |
20140035576 | Method and apparatus for accelerating magnetic resonance imaging - A method of MRI entails recording and storing MR signals from an object to produce an old set of data. A further measurement of the object is then initiated at a later time to record new MR data, whereby k-space is undersampled in the further measurement. The old data are corrected for changes in the new position of the object, for changes in the sensitivity and exact spatial positioning of the receiver coils as well as for changes in the actual field shimming. The old and new data are then combined to create a new, high resolution image of the object. | 02-06-2014 |
20140125335 | Method for magnetic resonance imaging - A method of MRI for reduction of motion artifacts in 3D MR data acquisition with multiple segments comprises: the complete acquisition being divided into two parts: basic acquisition and complementary acquisition. Basic acquisition is performed at the beginning. Complementary acquisition is performed after the basic acquisition is finished. View Reordering is prepared for basic acquisition and complementary acquisition separately. Motion monitoring is performed regularly during the data acquisition. Whenever motion is detected, data acquisition stops. Image reconstruction is performed when motion occurs in the phase of complementary acquisition. The final reconstructed image is free of motion artifacts. | 05-08-2014 |
20140300352 | METHOD TO ENTER MAGNETIC RESONANCE DATA INTO A MEMORY ORGANIZED AS k-SPACE, AND MAGNETIC RESONANCE APPARATUS OPERATING ACCORDING TO THE METHOD - In a method to associate k-space lines with echo trains of raw magnetic resonance data, parallel k-space lines orthogonally intersect a plane at respective intersection points. Each echo train has a trajectory length, and the k-space lines are associated with the echo trains such that a sum of trajectory lengths of all echo trains is minimal. The trajectory length TL of an echo train is defined by | 10-09-2014 |
20150061673 | CONTROL UNIT AND METHOD TO MONITOR A DATA ACQUISITION OF MAGNETIC RESONANCE IMAGE DATA - In a control method and control unit to monitor a data acquisition of magnetic resonance image data of an imaging area located in a measurement volume of a magnetic resonance apparatus, an RF excitation pulse is radiated by an RF transmission/reception device of the magnetic resonance apparatus, raw data are acquired after a time after the radiated excitation pulse, by means of the RF transmission/reception device, and store the raw data, the raw data are transmitted to a monitoring unit and (a) through (c) are repeated while switching different gradients for spatial coding by readout of k-space corresponding to the imaging area along trajectories that are predetermined by the switched gradients, up to a termination criterion that is predetermined by the monitoring unit. | 03-05-2015 |
20150279065 | Method for magnetic resonance imaging - A method is presented for accelerating magnetic resonance imaging. In 3D MRI, the k-space in the phase encoding plane is divided into two symmetric parts and three asymmetric parts. Different sampling densities are applied in different parts. Images are reconstructed by iteratively minimizing a cost function when random sampling is applied in each part. A phase constraint term is added into the cost function to improve the quality of the reconstruction by exploiting the conjugate symmetry of k-space. | 10-01-2015 |
20150301136 | MRI Method of Hybrid Acquisition in 3D TSE - A method for accelerating magnetic resonance imaging is proposed. In 3D MRI, the method utilizes two sub-echo-trains in each repetition time for the simultaneous acquisition of two contrasts. The first sub-echo-train is a turbo spin echo train and the second sub-echo-train is a gradient echo train. The method acquires two different contrasts simultaneously in a single acquisition, for example one water image plus one fat image, or one turbo spin echo image plus one susceptibility weighted image. | 10-22-2015 |
Patent application number | Description | Published |
20110208754 | Organization of Data Within a Database - A computer implemented method is provided for processing data representing a data entity having sub entities. The method includes analyzing queries to the data entity for deriving information about sets of the sub entities frequently queried together, and grouping the sub entities to a number of banks, each bank having a maximum width, based on the information about sets of sub entities frequently queried together, in order to reduce an average number of banks to be accessed for data retrieval. | 08-25-2011 |
20120117064 | ADAPTIVE CELL-SPECIFIC DICTIONARIES FOR FREQUENCY-PARTITIONED MULTI-DIMENSIONAL DATA - A cell-specific dictionary is applied adaptively to adequate cells, where the cell-specific dictionary subsequently optimizes the handling of frequency-partitioned multi-dimensional data. This includes improved data partitioning with super cells or adjusting resulting cells by sub-dividing very large cells and merging multiple small cells, both of which avoid the highly skewed data distribution in cells and improve the query processing. In addition, more efficient encoding is taught within a cell in case the distinct values that actually appear in that cell are much smaller than the size of the column dictionary. | 05-10-2012 |
20130033389 | DATA VALUE OCCURRENCE INFORMATION FOR DATA COMPRESSION - A method for generating occurrence data of data values for enabling encoding of a data set includes determining occurrences of data values in a first data batch and determining occurrence count information for a first number of most frequent data values in the first data batch, the occurrence count information identifying the most frequent data values and their occurrence counts. The method also includes generating for rest of the data values in the first data batch at least a first histogram having a second number of buckets and merging the occurrence count information of the first data batch with occurrence count information of a second data batch. The method further includes merging the first histogram of the first data batch to a merged histogram corresponding to the second data batch and processing a next data batch as a first data batch until the data set to be encoded is processed. | 02-07-2013 |
20160004740 | ORGANIZATION OF DATA WITHIN A DATABASE - A computer implemented method is provided for processing data representing a data entity having sub entities. The method includes analyzing queries to the data entity for deriving information about sets of the sub entities frequently queried together, and grouping the sub entities to a number of banks, each bank having a maximum width, based on the information about sets of sub entities frequently queried together, in order to reduce an average number of banks to be accessed for data retrieval. | 01-07-2016 |
Patent application number | Description | Published |
20100178768 | CONTROLLING PASSIVATING FILM PROPERTIES USING COLLOIDAL PARTICLES, POLYELECTROLYTES, AND IONIC ADDITIVES FOR COPPER CHEMICAL MECHANICAL PLANARIZATION - The present invention provides for a copper CMP slurry composition which comprises a complexing agent, an oxidizer, an abrasive and a passivating agent. The present invention also provides for a method of chemical mechanical planarization of a copper conductive structure which comprises administering the copper CMP slurry composition during the planarization process. | 07-15-2010 |
20110269312 | CHEMICAL MECHANICAL POLISHING (CMP) POLISHING SOLUTION WITH ENHANCED PERFORMANCE - This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad. | 11-03-2011 |
20120045970 | OXIDIZING PARTICLES BASED SLURRY FOR NOBEL METAL INCLUDING RUTHENIUM CHEMICAL MECHANICAL PLANARIZATION - A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material. | 02-23-2012 |
20120058641 | AQUEOUS POLISHING AGENT COMPRISING SOLID POLYMER PARTICLES AND TWO COMPLEXING AGENTS AND ITS USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES - An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs. | 03-08-2012 |
20120058643 | AQUEOUS METAL POLISHING AGENT COMPRISING A POLYMERIC ABRASIV CONTAINING PENDANT FUNCTIONAL GROUPS AND ITS USE IN A CMP PROCESS - (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs. | 03-08-2012 |
20120077419 | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CEO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) - Raspberry-type coated particles comprising a core selected from the group consisting of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with CeCO | 03-29-2012 |
20120083188 | DISPERSION COMPRISING CERIUM OXIDE AND SILICON DIOXIDE - Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s | 04-05-2012 |
20120208344 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING INORGANIC PARTICLES AND POLYMER PARTICLES - A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs. | 08-16-2012 |
20120231627 | PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS - An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior. | 09-13-2012 |
20120235081 | PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS - A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices. | 09-20-2012 |
20120311935 | ABRASIVE ARTICLES, METHOD FOR THEIR PREPARATION AND METHOD OF THEIR USE - Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a | 12-13-2012 |
20120322264 | AQUEOUS POLISHING AGENT AND GRAFT COPOLYMERS AND THEIR USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES - An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (al) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making use of the said aqueous polishing agent. | 12-20-2012 |
20130005149 | CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS - A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate. | 01-03-2013 |
20130161285 | AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES - An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices. | 06-27-2013 |
20130171824 | PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS - CMP process for substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films comprising the steps of (1) contacting the substrate with an aqueous composition containing (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9; (B) a water-soluble or water-dispersible linear or branched alkylene oxide homopolymer or copolymer; and (C) a water-soluble or water-dispersible polymer selected from (c1) aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers, (c2) homopolymers and copolymers of acrylamide monomers of the general formulas I and II: H | 07-04-2013 |
20130189842 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A SPECIFIC HETEROPOLYACID - A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 80 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium. | 07-25-2013 |
20130200038 | AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES - An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices. | 08-08-2013 |
20130200039 | AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS - An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N′-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition. | 08-08-2013 |
20160035582 | CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS - A chemical-mechanical polishing composition comprising:
| 02-04-2016 |
Patent application number | Description | Published |
20130168348 | AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS - An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition. | 07-04-2013 |
20130217231 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION - A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof. | 08-22-2013 |
20130273739 | AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS - An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices. | 10-17-2013 |
20130344696 | METHOD FOR FORMING THROUGH-BASE WAFER VIAS - Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole. | 12-26-2013 |
20140004703 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE | 01-02-2014 |
20140011362 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND AN AROMATIC COMPOUND COMPRISING AT LEAST ONE ACID GROUP - A chemical mechanical polishing (CMP) composition (Q) comprising
| 01-09-2014 |
20140199841 | PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SI1-XGEX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A PH VALUE OF 3.0 TO 5.5 - A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si | 07-17-2014 |
20140213057 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A GLYCOSIDE - A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R | 07-31-2014 |
20150017454 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN - Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium. | 01-15-2015 |
20150118845 | CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING TWO TYPES OF CORROSION INHIBITORS - A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium. | 04-30-2015 |
20150159050 | CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING POLYVINYL PHOSPHONIC ACID AND ITS DERIVATIVES - A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(0R2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R | 06-11-2015 |