Patent application number | Description | Published |
20110246916 | METHODS AND APPARATUSES FOR PROVIDING AN ENHANCED USER INTERFACE - Methods and apparatuses are provided for providing an enhanced user interface. A method may include causing display of a semi-transparent user interface layer concurrent with a second user interface layer. At least a portion of the semi-transparent user interface layer and at least a portion of the second user interface layer may overlap. The method may further include detecting a physical stimulus. The method may additionally include determining an effect of the physical stimulus on display of content in the semi-transparent user interface layer. The method may also include applying the determined effect by modifying display of content in the semi-transparent user interface layer in response to detection of the physical stimulus. Corresponding apparatuses are also provided. | 10-06-2011 |
20120096374 | COMPUTER MODELING - A method, apparatus and computer program are provided. a method, comprising: controlling a display to display a user movable lamina modeled using an array of particles; and controlling movement of the user movable lamina on the display by controlling, using a first distance relationship, relative spacing of a first particle in the array and at least one other particle adjacent to the first particle in the array, and by controlling, using a second distance relationship, relative spacing of the first particle and at least one further particle not adjacent to the first particle in the array. | 04-19-2012 |
20120319960 | CAUSING TRANSMISSION OF A MESSAGE - A method comprises receiving an indication of a bending force in excess of a first predetermined threshold being applied to a communications device, and responding to receipt of the indication of the bending force in excess of the first predetermined threshold by causing a message to be transmitted from the communications device to a remote receiver, or responding to subsequent receipt of an indication that the bending force has subsequently fallen below a second predetermined threshold by causing a message to be transmitted from the communication device to a remote receiver. | 12-20-2012 |
Patent application number | Description | Published |
20090035949 | METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS - The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar. | 02-05-2009 |
20090297696 | METHODS FOR FORMING CONDUCTIVE TITANIUM OXIDE THIN FILMS - The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures. | 12-03-2009 |
20090324821 | METHODS FOR FORMING THIN FILMS COMPRISING TELLURIUM - Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI | 12-31-2009 |
20100009078 | Synthesis and Use of Precursors for ALD of Tellurium and Selenium Thin Films - Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR | 01-14-2010 |
20100113642 | MOULDABLE, BIODEGRADABLE MATERIAL - A mouldable, biodegradable medical material, comprising an epsilon caprolactone homopolymer. The material is useful as an implant and in particular for filling irregularly shaped cavities in biological tissue in vivo. The epsilon caprolactone homopolymer can be produced by polymerizing epsilon caprolactone monomers in the presence of a titanium alkoxide catalyst. | 05-06-2010 |
20100285217 | PROCESS FOR PRODUCING OXIDE FILMS - Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials. | 11-11-2010 |
20110020546 | Low Temperature ALD of Noble Metals - Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds. | 01-27-2011 |
20110198756 | Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use - Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC′, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C′ comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C′ further and individually is substituted with a ligand represented by the formula CH(X)R | 08-18-2011 |
20110293830 | PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES - Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications. | 12-01-2011 |
20120276305 | ATOMIC LAYER DEPOSITION OF METAL PHOSPHATES AND LITHIUM SILICATES - The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates. | 11-01-2012 |
20120329208 | SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS - Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR | 12-27-2012 |
20130011557 | MICROCONTACT PRINTED FILMS AS AN ACTIVATION LAYER FOR SELECTIVE ATOMIC LAYER DEPOSITION - The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD. | 01-10-2013 |
20130252016 | METAMATERIAL THIN FILMS - A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials. | 09-26-2013 |
20140106070 | VAPOR DEPOSITION OF LiF THIN FILMS - A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film. | 04-17-2014 |
Patent application number | Description | Published |
20100113642 | MOULDABLE, BIODEGRADABLE MATERIAL - A mouldable, biodegradable medical material, comprising an epsilon caprolactone homopolymer. The material is useful as an implant and in particular for filling irregularly shaped cavities in biological tissue in vivo. The epsilon caprolactone homopolymer can be produced by polymerizing epsilon caprolactone monomers in the presence of a titanium alkoxide catalyst. | 05-06-2010 |
20110020546 | Low Temperature ALD of Noble Metals - Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds. | 01-27-2011 |
20120329208 | SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS - Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR | 12-27-2012 |
20130011557 | MICROCONTACT PRINTED FILMS AS AN ACTIVATION LAYER FOR SELECTIVE ATOMIC LAYER DEPOSITION - The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD. | 01-10-2013 |
Patent application number | Description | Published |
20140100788 | METHOD OF MONITORING DIVING AND A SYSTEM FOR MONITORING OR PLANNING A DIVE - The invention concerns a method, device and computer program product for monitoring or planning a dive of a diver. The method includes providing data on the composition of gases breathed by the diver during the dive, providing data on the depth or ambient pressure of the diver, and using a model to provide a safe ascent profile for the diver based on the data on the composition of gases and on the depth or ambient pressure. According to the invention, the method further comprising detecting, based on the data on the composition of gases, a gas composition change which may lead to a deep tissue isobaric counter diffusion situation, and the model comprising means for immediately temporally retarding the ascent profile if such gas composition change is detected. The invention can be used to mitigate the harmful effects of dangerous breathing gas changes during diving. | 04-10-2014 |
20140282131 | GRAPHICAL USER INTERFACE EDITOR SYSTEM AND METHOD FOR PERSONAL DEVICES - This invention relates to an editor system for graphical user interfaces used in personal devices, and to a method for enabling a user to selectively display data and edit parameters on the user interface, and to a personal device, like a wristop or a diving computer. In order to edit the graphical user interface having at least one display view, where each set of data fields are arranged in a predetermined manner on the display view, the inventive editor system provides user access to a data field out of a set of data fields to allow user selection of parameters in this field. A list of parameter options valid for said field is displayed for selection by the user, the parameter value of which is to be displayed in said field. | 09-18-2014 |
20150071039 | Underwater communication system and related communicating method and devices - The invention relates to an underwater communication system and method. The system comprises at least one underwater remote device comprising a processing unit and functionally connected to the processing unit first magnetoinductive communication means capable of communicating with other underwater devices using magnetic induction, and a wearable underwater monitor device comprising second magnetoinductive communication means capable of communicating with said remote device using magnetic induction. According to the invention, the remote device further comprises functionally connected to said processing unit acoustic communication means capable of transmitting acoustic signals. The invention helps to keep the monitor device small and energy efficient, still allowing for long-distance underwater communications. | 03-12-2015 |