Patent application number | Description | Published |
20120097870 | APPARATUS FOR FORMING A MAGNETIC FIELD AND METHODS OF USE THEREOF - Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils. | 04-26-2012 |
20130098551 | ELECTRON BEAM PLASMA SOURCE WITH ARRAYED PLASMA SOURCES FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided. | 04-25-2013 |
20130098552 | E-BEAM PLASMA SOURCE WITH PROFILED E-BEAM EXTRACTION GRID FOR UNIFORM PLASMA GENERATION - A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity. | 04-25-2013 |
20130098872 | SWITCHED ELECTRON BEAM PLASMA SOURCE ARRAY FOR UNIFORM PLASMA PRODUCTION - An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities. | 04-25-2013 |
20130098882 | ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma. | 04-25-2013 |
20130098883 | ELECTRON BEAM PLASMA SOURCE WITH PROFILED MAGNET SHIELD FOR UNIFORM PLASMA GENERATION - A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield. | 04-25-2013 |
20130110435 | SELF-BIAS CALCULATION ON A SUBSTRATE IN A PROCESS CHAMBER WITH BIAS POWER FOR SINGLE OR MULTIPLE FREQUENCIES | 05-02-2013 |
20130154175 | PROCESS KIT COMPONENTS FOR USE WITH AN EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY - Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body. | 06-20-2013 |
20130155568 | EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode. | 06-20-2013 |
20140232374 | MEASUREMENT OF PLURAL RF SENSOR DEVICES IN A PULSED RF PLASMA REACTOR - In a plasma reactor having pulsed RF plasma power sources, measurements by RF sensors of nulls attributable to pulse duty cycles are replaced by non-zero measurements synthesized from prior non-zero measurements, to prevent feedback control system instabilities. | 08-21-2014 |
20140367046 | ENHANCED PLASMA SOURCE FOR A PLASMA REACTOR - Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector. | 12-18-2014 |