Patent application number | Description | Published |
20090283028 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 11-19-2009 |
20100135349 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 06-03-2010 |
20100187541 | Doped Aluminum Nitride Crystals and Methods of Making Them - Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. | 07-29-2010 |
20100264460 | THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS - In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed. | 10-21-2010 |
20100314551 | In-line Fluid Treatment by UV Radiation - A UV source is regulated according to one or more purification parameters to produce a desired germicidal effect in a liquid while minimizing wasted power. | 12-16-2010 |
20110008621 | ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM - In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour. | 01-13-2011 |
20110011332 | METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE - A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm | 01-20-2011 |
20120000414 | GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL - In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber. | 01-05-2012 |
20120104355 | THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS - In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed. | 05-03-2012 |
20140093671 | LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM - Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10 | 04-03-2014 |
20140203311 | PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES - In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die. | 07-24-2014 |
20140231725 | DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM - Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. | 08-21-2014 |
20140264263 | PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR CONTACTS - In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies. | 09-18-2014 |
20150013592 | DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH - Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm | 01-15-2015 |
20150020731 | DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH - Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm | 01-22-2015 |