Patent application number | Description | Published |
20100055342 | MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD) - The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique. | 03-04-2010 |
20110217465 | SHIELDS FOR SUBSTRATE PROCESSING SYSTEMS - A shielding system for a physical vapor deposition (PVD) chamber is disclosed. The PVD chamber includes a pedestal supporting a substrate. The shielding system includes a first annular portion and a second annular portion of a pedestal shield. The first annular portion is attached the pedestal at a first location. The first annular portion is located at or below a plane including the substrate. The second annular portion is attached to the pedestal at a second location that is below the first location. The first annular portion is spaced a predetermined distance from the second annular portion and is electrically isolated from the second annular portion. | 09-08-2011 |
20110233050 | MAGNETIC LENSING TO IMPROVE DEPOSITION UNIFORMITY IN A PHYSICAL VAPOR DEPOSITION (PVD) PROCESS - A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band. | 09-29-2011 |
20110300716 | METHOD OF IMPROVING FILM NON-UNIFORMITY AND THROUGHPUT - Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, a volume, and an isolation valve between the volume and the showerhead. A gas is delivered the volume when the isolation valve is closed, pressurizing the volume. The isolation valve is opened to allow the gas to flow to the showerhead when the gas is being delivered to the volume. A material is formed on the wafer substrate using the gas. In some implementations, releasing the pressurized gas from the volume reduces the duration of time to develop a spatially uniform gas flow across the showerhead. | 12-08-2011 |
20130206725 | CREATION OF OFF-AXIS NULL MAGNETIC FIELD LOCUS FOR IMPROVED UNIFORMITY IN PLASMA DEPOSITION AND ETCHING - Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate. | 08-15-2013 |
20130344245 | SUPPRESSION OF PARASITIC DEPOSITION IN A SUBSTRATE PROCESSING SYSTEM BY SUPPRESSING PRECURSOR FLOW AND PLASMA OUTSIDE OF SUBSTRATE REGION - A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber. | 12-26-2013 |
Patent application number | Description | Published |
20130092086 | MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER - A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process. | 04-18-2013 |
20130228225 | SEQUENTIAL CASCADING OF REACTION VOLUMES AS A CHEMICAL REUSE STRATEGY - A substrate processing system includes one or more processing chambers defining N reaction volumes. N-1 first valves are arranged between the N reaction volumes. A controller communicates with the N-1 first valves and is configured to pressurize a first one of the N reaction volumes with precursor gas to a first target pressure, wait a first predetermined soak period, evacuate a second one of the N reaction volumes to a second target pressure that is lower than the first target pressure, and open one of the N-1 first valves between the first one of the N reaction volumes and a second one of the N reaction volumes. | 09-05-2013 |
20130269609 | CAROUSEL REACTOR FOR MULTI-STATION, SEQUENTIAL PROCESSING SYSTEMS - A reactor for processing a plurality of substrates includes P processing station assemblies arranged symmetrically around an axis, where P is an integer greater than one. A pedestal carousel assembly includes P pedestal assemblies arranged symmetrically around the axis, each of the P pedestal assemblies including a pedestal. A rotational actuator rotates the pedestal carousel assembly relative to the axis to selectively index the P pedestal assemblies with the P processing station assemblies. Each of the P processing station assemblies processes substrates arranged on corresponding ones of the P pedestal assemblies at the same time. | 10-17-2013 |
20140238608 | CERAMIC SHOWERHEAD WITH EMBEDDED RF ELECTRODE FOR CAPACITIVELY COUPLED PLASMA REACTOR - A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material. | 08-28-2014 |
Patent application number | Description | Published |
20110017139 | System for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (MII-ALD) - The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. | 01-27-2011 |
20110191013 | Monowheel Type Vehicle - An engine-propelled monowheel vehicle comprises two wheels, close together, that circumscribe the remainder of the vehicle. When the vehicle is moving forward, the closely spaced wheels act as a single wheel, and the vehicle turns by leaning the wheels. A single propulsion system provides a drive torque that is shared by the two wheels. A separate steering torque, provided by a steering motor, is added to one wheel while being subtracted from the other wheel, enabling the wheels to rotate in opposite directions for turning the vehicle at zero forward velocity. The vehicle employs attitude sensors, for sensing roll, pitch, and yaw, and an automatic balancing system. A flywheel in the vehicle spins at a high rate around a spin axis, wherein the spin axis is rotatable with respect to the vehicle's frame. The axis angle and flywheel spin speed are continually adjustable to generate torques for automatic balancing. | 08-04-2011 |
20130316094 | RF-POWERED, TEMPERATURE-CONTROLLED GAS DIFFUSER - A gas diffusing device includes a first portion defining a gas supply conduit having a first inlet and a first outlet and including a second inlet, a second outlet and passages connecting the second inlet to the second outlet. The passages receive non-conductive fluid to cool the first portion. A second portion is connected to the first portion, includes a diffuser face with spaced holes and defines a cavity that is in fluid communication with the first outlet of the gas supply conduit and the diffuser face. A heater is in contact with the second portion to heat the second portion. | 11-28-2013 |
Patent application number | Description | Published |
20120222815 | HYBRID CERAMIC SHOWERHEAD - Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement. | 09-06-2012 |
20130333768 | POINT OF USE VALVE MANIFOLD FOR SEMICONDUCTOR FABRICATION EQUIPMENT - A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features. | 12-19-2013 |
20130334344 | CONTOURED SHOWERHEAD FOR IMPROVED PLASMA SHAPING AND CONTROL - Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate. | 12-19-2013 |
20140235069 | MULTI-PLENUM SHOWERHEAD WITH TEMPERATURE CONTROL - An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate. | 08-21-2014 |