Patent application number | Description | Published |
20130207103 | THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY - An embodiment of the invention provides a manufacturing method of a thin-film transistor includes: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, and an active layer on the substrate; forming an insulating metal oxide layer covering the active layer, wherein the insulating metal oxide layer including a metal oxide of a first metal; forming a metal layer covering the active layer, wherein the metal layer includes a second metal; forming a source electrode and a drain electrode on the metal layer with a trench separating therebetween; removing the metal layer exposed by the trench; and performing an annealing process to the metal layer and the insulating metal oxide layer, such that the metal layer reacts with the insulating metal oxide layer overlapping the metal layer to form a conducting composite metal oxide layer including the first metal and the second metal. | 08-15-2013 |
20130207104 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE - An embodiment of the invention provides a manufacturing method of a thin film transistor including: providing a substrate; sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, and an active layer on the substrate; forming a conductive layer on the active layer and including a source electrode, a drain electrode, and a separating portion connecting therebetween; forming a first photoresist layer on the conductive layer and covering the source electrode and the drain electrode and exposing the separating portion; oxidizing the separating portion into an insulating metal oxide layer so as to electrically insulate the source electrode from the drain electrode; and removing the first photoresist layer. | 08-15-2013 |
20150206980 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE - An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion. | 07-23-2015 |
20150340446 | THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR FORMING THE SAME, AND DISPLAY - A thin film transistor substrate includes: a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion. | 11-26-2015 |
20160035900 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL USING THE SAME - A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a first protective layer, and a second protective layer. The gate electrode is disposed on a substrate. The metal oxide semiconductor layer is disposed on a gate insulating layer and electrically connects the source electrode and the drain electrode. The first protective layer disposed on the metal oxide semiconductor layer has a first oxygen vacancy concentration. The second protective layer disposed on the first protective layer has a second oxygen vacancy concentration. A boundary area located between the first and second protective layers has a third oxygen vacancy concentration. The third oxygen vacancy concentration is respectively greater than the first oxygen vacancy concentration and the second oxygen vacancy concentration. | 02-04-2016 |
20160049517 | THIN FILM TRANSISTOR AND DISPLAY PANEL USING THE SAME - A thin film transistor includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a channel layer. The gate electrode is disposed on a substrate, and the channel layer is electrically insulated from the gate electrode. The gate insulating layer is disposed between the gate electrode and the channel layer. The source electrode and the drain electrode are electrically connected with the channel layer. The channel layer includes a front channel layer proximate to a side of the gate insulating layer, a back channel layer proximate to a side of the source electrode and an intermediate layer between the front channel layer and the back channel layer. The oxygen vacancy concentration of the front channel layer is greater than the oxygen vacancy concentration of the intermediate layer | 02-18-2016 |
Patent application number | Description | Published |
20130003006 | SYSTEM FOR DISPLAY IMAGES - A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer. | 01-03-2013 |
20130258265 | ARRAY SUBSTRATE STRUCTURE AND DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - An array substrate structure including a first substrate, a plurality of thin film transistors, a first dielectric layer, a second dielectric layer, and a second electrode layer is provided. Each of the thin film transistors has a patterned first electrode layer which is disposed on the first electrode layer and has a first through hole. The second dielectric layer is disposed on the first dielectric layer and has a second through hole. The second through hole is connected to the first through hole, such that the second electrode layer is electrically connected to the first electrode layer via the first through hole and the second through hole. | 10-03-2013 |
20130308298 | MICROELECTRO-MECHANICAL SYSTEM DISPLAY - The invention provides a microelectro-mechanical system display (MEMS display), including: a first substrate, wherein the first substrate includes a first surface and a second surface; a second substrate formed on the first surface of the first substrate; a digital micro shutter formed between the first substrate and the second substrate; a backlight module formed on a surface of the second substrate far away from the digital micro shutter; and a first optical layer formed below the second surface of the first substrate. | 11-21-2013 |
20140093252 | SHIFT REGISTER CIRCUIT AND DISPLAY DEVICE USING THE SAME - The display device according to the present invention comprises a substrate and at least one optical coupler having an optical receiver and an optical transmitter formed on the substrate, wherein the optical transmitter transmits an optical signal to the optical receiver. | 04-03-2014 |
20140103351 | Low Temperature Poly-Silicon Thin Film Transistor, Manufacturing Method thereof, and Display Device - The present invention discloses a low temperature poly-silicon thin film transistor, a manufacturing method thereof, and a display device. Particularly, a metal film is formed between source and drain electrodes and a first conductive layer, and the metal film reacts with the poly-silicon of the source and drain electrodes to form metal silicide, whereby activating the source and drain electrodes at a low temperature. As such, the temperature of the manufacturing process of low temperature poly-silicon thin film transistor can be confined to 350° C. or lower. | 04-17-2014 |
20150071323 | APPARATUS FOR IDENTIFYING MORPHOLOGY - An apparatus for identifying morphology comprises a substrate, a driving circuit, a readout circuit and an identifying circuit. The substrate comprises temperature sensors each comprising a sensing transistor. The driving circuit selects at least one of the transistors as a target sensing transistor, and outputs a driving signal to the target sensing transistor to heat the target sensing transistor in a heating period. The target sensing transistor senses a temperature change to generate a sensing signal in a sensing period after the heating period. The readout circuit reads the sensing signal, and the identifying circuit identifies the morphology according to the sensing signal. | 03-12-2015 |
20150248028 | SYSTEM FOR DISPLAY IMAGES - A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer. | 09-03-2015 |
20160026020 | SYSTEM FOR DISPLAY IMAGES - A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is disposed in the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer. A passivation layer disposed on the portion of the metal layer and covering a sidewall of the patterned planarization layer to form a first passivation sidewall, wherein the seal is in contact with the first passivation sidewall. | 01-28-2016 |
20160026021 | SYSTEM FOR DISPLAY IMAGES - A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates and at the peripheral area. A patterned planarization layer is disposed on the first substrate. A passivation layer disposed between the seal and the first substrate, wherein the seal is in contact with a sidewall of the passivation layer. | 01-28-2016 |
20160033754 | DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A display device and a method for fabricating the same are provided. The device is an active matrix interference modulator (IMOD) display device which includes a thin film transistor and an interference modulator (IMOD). The interference modulator (IMOD) is integrated on the thin film transistor, a first metal layer is simultaneously used as a light-shielding pattern and a gate electrode, and a second metal layer is simultaneously used as a wiring and a source/drain metal layer. Therefore, the fabricating time and cost are saved. In addition, the aperture ratio of the display device is improved because the pixel thin film transistor is not below an optical gap. | 02-04-2016 |
Patent application number | Description | Published |
20150261050 | DISPLAY DEVICE - A display device is provided. The display device includes a pixel-displaying region, including: at least two pixels including a plurality of sub-pixels; and a light-shielding layer including a matrix portion and an enlarged portion, wherein the enlarged portion is disposed at an intersection of two of the adjacent sub-pixels and is adjacent to the matrix portion; wherein the matrix portion defines the sub-pixels, and a total area of the sub-pixels is defined as a first area and a ratio of an area of the enlarged portion to the first area is about 1.5% to 6%. | 09-17-2015 |
20150262536 | DISPLAY DEVICE - A display device is provided. The display device includes a switch including a gate, an active layer disposed on the gate, a source electrode connected to the active layer, and a drain electrode connected to the active layer. In particular, the distance between the edge of the gate electrode and the edge of the active layer is 1.2 to 3 μm. The drain electrode includes a connection portion, an oblique portion, and an extension portion, wherein the oblique portion is disposed between the connection portion and the extension portion, and wherein at least a part of the oblique portion overlaps with the gate electrode. | 09-17-2015 |
20150359089 | DISPLAY PANEL - A display panel comprising a first substrate, a second substrate and a light shielding layer is provided. The first substrate comprises several display units arranged in a matrix and forming an image display region. The display units comprise m*n pixels arranged in a matrix. The second substrate is opposite to the first substrate. The light shielding layer located between the first substrate and the second substrate comprises several extending portions. The projection of one of the extending portions on the first substrate overlaps at least one of the pixels. Each pixel having the largest overlapping area with the extending portion is a first pixel, and other pixels are second pixels. In each display unit, there is at most one first pixel per column and per row. In the image display region, all of the pixels adjacent to the first pixel are second pixels. | 12-10-2015 |