Lee, Kyoungki-Do
Chang Goo Lee, Kyoungki-Do KR
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20080233750 | Method for forming fine patterns in semiconductor device - A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer over an etch target layer, forming first etch mask patterns having negative slopes over the first hard mask layer, thereby forming a resultant structure, forming a first material layer for a second etch mask over the resultant structure, performing a planarization process until the first etch mask patterns are exposed to form second etch mask patterns filled in spaces between the spacers, removing the spacers, and etching the first hard mask layer and the etch target layer using the first etch mask patterns and the second etch mask patterns. | 09-25-2008 |
20080272431 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE WITH VARYING RECESS WIDTH FOR INCREASED CHANNEL LENGTH - A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess. | 11-06-2008 |
Chang Hyuk Lee, Kyoungki-Do KR
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20080225628 | Semiconductor memory device for driving a word line - A semiconductor memory device for driving a word line is provided. The enabling timing of a word line is advanced using a block information signal that contains no redundancy information, thereby improving a RAS to CAS delay (tRCD). A sub word line driving enable signal for controlling a driving of a sub word line and a main word line driving enable signal for controlling a driving of a main word line are controlled by the block information signal that contains only mat information but does not contain the redundancy information. Accordingly, the word line control signal may be activated earlier than the sub word line driving enable signal and the main word line driving enable signal, thereby advancing the enable timing of the word line. | 09-18-2008 |
20080279034 | DATA OUTPUT CIRCUIT OF SYNCHRONOUS MEMORY DEVICE - A data output circuit of a synchronous memory device including a plurality of pipelatches having an N bits prefetch function. Each pipelatch comprises a data switching section for switching an output path of N bits data; a first data selection section for receiving one half of the N bits data and outputting the one half in response to a first control signal; a second data selection section for receiving the other half of the N bits data and outputting the other half in response to the first control signal; a first shifter for outputting a second control signal delayed by a first time after receiving the first control signal; and a second shifter for receiving the data outputted from the second data selection section and outputting the data with a delay of the first time in response to the second control signal. | 11-13-2008 |
Chun-Hee Lee, Kyoungki-Do KR
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20090163006 | METHOD FOR FABRICATING VERTICAL CHANNEL TRANSISTOR - A method for fabricating a vertical channel transistor includes forming a structure including a plurality of trimmed pillar patterns, forming a conductive layer for a gate electrode including a seam over a resultant structure with the pillar patterns, performing an etch-back process until the seam is exposed, and forming a gate electrode by etching the etch-backed conductive layer. | 06-25-2009 |
Eun-A Lee, Kyoungki-Do KR
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20090140385 | Capacitor with nanotubes and method for fabricating the same - A capacitor with nanotubes and a method for fabricating the same are provided. The capacitor includes: a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer. The method includes the steps of: forming a conductive layer for forming a lower electrode; forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer; forming a dielectric layer on the nanotube array; and forming an upper electrode on the dielectric layer. | 06-04-2009 |
Geun Il Lee, Kyoungki-Do KR
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20080212378 | DATA LATCH CONTROLLER OF SYNCHRONOUS MEMORY DEVICE - Disclosed is a data input circuit of a synchronous memory device for detecting and amplifying data, and transferring the amplified data for storage, which including: a write strobe signal converter for receiving a write strobe signal, dividing the received write strobe signal, and outputting control signals of predetermined bits, the control signals being synchronized with rising and falling edges of the divided signal; and a latch unit for latching data corresponding to the bits by means of the control signals, and outputting the data for the detection and amplification of the data. The data input circuit may include a first delay unit for delaying the data in order to match setup-hold time, a second delay unit for performing delay for adjusting the data outputted from the latch unit, and a third delay unit for performing delay for adjusting the write strobe signal outputted from the latch unit. | 09-04-2008 |
Hee-Bong Lee, Kyoungki-Do KR
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20100083494 | Bonding Tool for Mounting Semiconductor Chips - A vacuum bonding tool for pick-and-place and bonding semiconductor chips onto a substrate or onto a previously mounted die to form a die stack includes a shank and a suction part. The shank has a vacuum conduit extending from a first end to a second end of the shank. The shank is adapted for cooperative engagement with the suction part at the second end, and the shank has a plate at the second end to support the suction part. The suction part has a surface for contacting a semiconductor chip during pick-and place operation. According to the invention, the suction part is made of an elastically deformable conductive or non-conductive material. In various embodiments, the chip contacting surface of the elastically deformable suction part flat overall, or is concave, of has a flat central region and concave regions. | 04-08-2010 |
Hunteak Lee, Kyoungki-Do KR
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20110221058 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICALLY OFFSET BOND ON TRACE INTERCONNECTS ON DIFFERENT HEIGHT TRACES - A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved by forming different height first and second conductive layer above a substrate. A first patterned photoresist layer is formed over the substrate. A first conductive layer is formed in the first patterned photoresist layer. The first patterned photoresist layer is removed. A second patterned photoresist layer is formed over the substrate. A second conductive layer is formed in the second patterned photoresist layer. The height of the second conductive layer, for example 25 micrometers, is greater than the height of the first conductive layer which is 5 micrometers. The first and second conductive layers are interposed between each other close together to minimize pitch and increase I/O count while maintaining sufficient spacing to avoid electrical shorting after bump formation. An interconnect structure is formed over the first and second conductive layers. | 09-15-2011 |
20110316132 | Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnect Structure on Leadframe - A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved with a leadframe having a plurality of lead fingers around a die paddle. A first conductive layer is formed over the lead fingers. A second conductive layer is formed over the lead fingers. Each second conductive layer is positioned adjacent to the first conductive layer and each first conductive layer is positioned adjacent to the second conductive layer. The second conductive layer has a height greater than a height of the first conductive layer. The first and second conductive layers can have a side-by-side arrangement or staggered arrangement. Bumps are formed over the first and second conductive layers. Bond wires are electrically connected to the bumps. A semiconductor die is mounted over the die paddle of the leadframe and electrically connected to the bond wires and BOT interconnect structure. | 12-29-2011 |
20120025373 | Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnects on Different Height Traces - A method of making a semiconductor device includes providing a substrate, and forming a first conductive layer over the substrate. A patterned layer is formed over the first conductive layer. A second conductive layer is formed in the patterned layer. A height of the second conductive layer is greater than a height of the first conductive layer. The patterned layer is removed. A first bump and a second bump are formed over the first and second conductive layers, respectively, wherein the second bump overlaps the first bump, and wherein an uppermost surface of the second bump is vertically offset from an uppermost surface of the first bump. Bond wires are formed on the first and second bumps. The bond wires are arranged in a straight configuration. Lowermost surfaces of the first conductive layer and second conductive layer are substantially coplanar. | 02-02-2012 |
20130154067 | Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnect Structure on Leadframe - A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved with a leadframe having a plurality of lead fingers around a die paddle. A first conductive layer is formed over the lead fingers. A second conductive layer is formed over the lead fingers. Each second conductive layer is positioned adjacent to the first conductive layer and each first conductive layer is positioned adjacent to the second conductive layer. The second conductive layer has a height greater than a height of the first conductive layer. The first and second conductive layers can have a side-by-side arrangement or staggered arrangement. Bumps are formed over the first and second conductive layers. Bond wires are electrically connected to the bumps. A semiconductor die is mounted over the die paddle of the leadframe and electrically connected to the bond wires and BOT interconnect structure. | 06-20-2013 |
Hyeng Ouk Lee, Kyoungki-Do KR
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20110175654 | DATA OUTPUT CONTROL CIRCUIT AND DATA OUTPUT CONTROL METHOD - A data output control circuit controls a data output in a read operation. A data output control method includes a count shifting mode and a delay mode and can be used in low and high frequency operations, so that a data output can be stably controlled in a broad frequency range. The data output control circuit includes: a low frequency mode controller a high frequency mode controller and a selector selecting any one of first and second command signals through CAS latency information to be output as a data output control signal. | 07-21-2011 |
Hyung-Dong Lee, Kyoungki-Do KR
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20090115505 | SEMICONDUCTOR DEVICE WITH CONTROLLABLE DECOUPLING CAPACITOR - Semiconductor device with a controllable decoupling capacitor includes a decoupling capacitor connected between a power voltage terminal and a ground terminal and a switching unit configured to enable/disable the decoupling capacitor in response to a control signal. According to another aspect, a semiconductor device with a controllable decoupling capacitor includes multiple circuits, decoupling capacitors being connected in parallel to each of the circuits and switching units being configured to enable/disable the decoupling capacitors in response to control signals. | 05-07-2009 |
Hyungmin Lee, Kyoungki-Do KR
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20120292745 | Semiconductor Device and Method of Forming 3D Semiconductor Package with Semiconductor Die Stacked Over Semiconductor Wafer - A semiconductor device has a substrate and plurality of first semiconductor die having conductive vias formed through the first semiconductor die mounted with an active surface oriented toward the substrate. An interconnect structure, such as bumps or conductive pillars, is formed over the substrate between the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The second semiconductor die is electrically connected through the interconnect structure to the substrate and through the conductive vias to the first semiconductor die. An underfill material is deposited between the first semiconductor die and substrate. Discrete electronic components can be mounted to the substrate. A heat spreader or shielding layer is mounted over the first and second semiconductor die and substrate. Alternatively, an encapsulant is formed over the die and substrate and conductive vias or bumps are formed in the encapsulant electrically connected to the first die. | 11-22-2012 |
Ihl-Ho Lee, Kyoungki-Do KR
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20080198672 | Power Supply Control Circuit and Controlling Method Thereof - The present invention provides a power supply control circuit and a control method thereof, capable of securing an accurate operation of a GIO in a burst data transmission having a high compression rate. The power supply control circuit of a semiconductor memory device includes: a counter which is reset in response to a read command signal or a write command signal to count an input clock and then, to output a counting completion signal; and a power supply enable signal generator enabled in response to the read command signal or the write command signal and disabled in response to the counting completion signal, for generating a power supply enable signal. | 08-21-2008 |
20090231946 | SEMICONDUCTOR MEMORY DEVICE HAVING COLUMN DECODER - A semiconductor memory device includes a cell matrix having a number of cells, a multiplicity of column decoders for selectively activating the cells in response to code signals containing column address information for the cells, wherein each column decoder contains a pre-driving unit for providing a state output signal transiting between a power supply voltage and a source voltage in response to the code signals and a driving unit for outputting a column selection signal to activate a corresponding cell in response to the state output signal, wherein the pre-driving unit and the driving unit include at least one PMOS transistor and at least one NMOS transistor receiving a pumping voltage and a back-bias voltage, respectively, through their bulk, the pumping voltage having a voltage level higher than that of the power supply voltage and the back-bias voltage having a voltage level lower than that of a ground voltage. | 09-17-2009 |
In-Chan Lee, Kyoungki-Do KR
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20080237722 | Semiconductor device and method for fabricating the same - A transistor, comprising a first gate structure formed on a substrate, and having a stacked structure of a first gate electrode and a first gate hard mask, a first gate spacer formed on sidewalls of the first gate structure, a second gate structure having a stacked structure of a second gate electrode and a second gate hard mask, the second gate structure surrounding both sidewalls and top surfaces of the first gate structure and the first gate spacer, and a second gate spacer formed on sidewalls of the second gate structure. | 10-02-2008 |
Jae Chun Lee, Kyoungki-Do KR
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20100169229 | Business Processing System Using Remote PC Control System of Both Direction - The present invention relates to an integrated business processing system in which a conventional Internet web server-based unidirectional remote control system can be improved to a bidirectional PC remote control system in a one-to-one PC access state, a variety of functions, such as a table for writing letters and drawing figures, etc., can be added, and a variety of business processing can be smoothly performed through the association of a client PC system, a consultant PC system, a franchise head office system, an assistant business PC system in terms of a business task, a construction site business processing PC system, an custom-built and material development PC system, a company head office warehouse and factory PC system, and a developing country production factory and export/import management PC system, which are based on a unidirectional or bidirectional PC remote control business processing system. To this end, integrated business processing system using a bidirectional PC remote control base, wherein a client PC of an Internet PC remote control system including a PC main body and a general monitor connected to the PC main body, and a consultant PC of the Internet PC remote control system including a PC main body and multiple monitors of a main monitor and an auxiliary monitor having a liquid crystal tablet or a general tablet, which is connected to the PC main body and is capable of performing two or more writing and drawing functions, are connected using communication means of wired/wireless wires or satellite Internet, and a remote control client module, a remote FIP client module and a remote CHAT client module are constructed for the remote control, and are adapted to analyze a corresponding protocol and distribute and transmit each thread through a TCP/IP communication port, wherein the consultant PC first opens a consultant access administrator window of the PC remote control system, displays the consultant access administrator window on the monitor, and informs the client PC of a remote access request using a general telephone, so that the client PC can make access through a client adaptor or an access program through a website; and after a client is accessed through Internet remote control by clicking on a client access menu of the Internet remote control system base, the client PC remotely accesses the client PC and remotely accesses the consultant PC by manipulating the PC main body of the client PC under remote control authority. | 07-01-2010 |
Jae-Kyun Lee, Kyoungki-Do KR
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20080220543 | Method for fabricating semiconductor device - A method for fabricating a semiconductor device includes forming a fuse over a substrate, the fuse having a barrier layer, a metal layer, and an anti-reflective layer stacked, selectively removing the anti-reflective layer, forming an insulation layer over a whole surface of the resultant structure including the fuse, and performing repair-etching such that part of the insulation layer remains above the fuse. | 09-11-2008 |
Jee-Eun Lee, Kyoungki-Do KR
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20100284233 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device can reduce a circuit area necessary for row repair. The semiconductor memory device includes a plurality of memory banks, a plurality of cell arrays arranged in each of the memory banks, a plurality of array word lines arranged in each of the cell arrays, one or more repair word lines arranged in each of the cell arrays, and a plurality of repair information storages configured to store bank information and row addresses of the array word lines to be replaced with the repair word lines. | 11-11-2010 |
Joon Won Lee, Kyoungki-Do KR
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20100046131 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND ELECTROSTATIC DISCHARGE PROTECTION METHOD OF A SEMICONDUCTOR MEMORY DEVICE - An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD. | 02-25-2010 |
Jung-Seock Lee, Kyoungki-Do KR
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20100276789 | SEMICONDUCTOR DEVICE HAVING MULTIPLE-LAYER HARD MASK WITH OPPOSITE STRESSES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a hard mask including a first layer and a second layer in contact with each other and having opposite stress types, wherein a difference between initial stresses of the first layer and the second layer is increased so that after a thermal process, the difference between the final stresses of the first and second layer becomes smaller, to reduce the likelihood of peeling of the first or second layer. The initial stress of the first layer includes a compressive stress and the initial stress of the second layer includes a tensile stress. | 11-04-2010 |
Jun-Woo Lee, Kyoungki-Do KR
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20080278201 | Buffering circuit of semiconductor device - A buffering circuit of a semiconductor device includes: a first buffer configured to receive a first power voltage and a second power voltage as driving power voltages to buffer an input signal; a power supplier configured to adjust supply amounts of the first and second power voltages in response to a plurality of driving power signals to supply first and second driving power voltages; and a second buffer configured to receive the first and second driving power voltages, and to buffer an output signal of the first buffer. | 11-13-2008 |
20090058481 | Semiconductor memory device and method for driving the same - A semiconductor memory device has a duty cycle correction circuit capable of outputting a duty cycle corrected clock and its inverted clock having substantially exactly 180° phase difference therebetween. The semiconductor memory device includes a duty cycle corrector configured to receive a first clock and a second clock to generate a first output clock and a second output clock whose duty cycle ratios are corrected in response to correction signals, and a clock edge detector configured to generate the correction signals corresponding to an interval between a reference transition timing of the first output clock and a reference transition timing of the second output clock. | 03-05-2009 |
20090058482 | Duty detection circuit - Semiconductor memory device with duty correction circuit includes a clock edge detector configured to generate first and second detection pulses in response to a transition timing of a common clock signal in an initial measurement operation; a duty detector configured to compare the first and second detection pulses to output comparison result signals; and a code counter configured to control the duty detector based on the comparison signals outputted from the duty detector in the initial measurement operation. | 03-05-2009 |
Kang-Seol Lee, Kyoungki-Do KR
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20090002018 | Impedance adjusting circuit and semiconductor memory device having the same - An impedance adjusting circuit includes: a first calibration resistor circuit configured to be calibrated with an external resistor and generate a first calibration code; a second calibration resistor circuit configured to be calibrated with the first calibration resistor circuit and generate a second calibration code, the second calibration resistor circuit being connected to a first node; and a transmission line circuit configured to be responsive to a control signal to connect the first node to a pin of a system employing the impedance adjusting circuit. | 01-01-2009 |
20090267683 | INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR DEVICE - Embodiments of the present invention are directed to provide an internal voltage generator of a semiconductor memory device for generating a predetermined stable level of an internal voltage. The semiconductor memory device includes a control signal generator, an internal voltage generator and an internal voltage compensator. The control signal generator generates a reference signal and a compensating signal which are corresponding to voltage level of the reference signal. The internal voltage generator generates an internal voltage in response to the reference signal. The internal voltage compensator compensates the internal voltage in response to the compensating signal. | 10-29-2009 |
20100188139 | DEVICE FOR SUPPLYING TEMPERATURE DEPENDENT NEGATIVE VOLTAGE - A negative voltage supply device includes a negative voltage detector and a negative voltage pumping unit. The negative voltage pumping unit pumps a negative voltage in response to a detection signal. The negative voltage detector detects a level of a negative voltage by using a first element and a second element, which are different in the degree of change in their respective resistance values depending on the temperature, and outputs the detection signal. The detection signal informs the negative voltage pumping unit that pumping of the negative voltage is no longer needed. | 07-29-2010 |
20110234288 | INTERNAL VOLTAGE GENERATING CIRCUIT FOR PREVENTING VOLTAGE DROP OF INTERNAL VOLTAGE - An internal voltage generating circuit is utilized to perform a TDBI (Test During Burn-in) operation for a semiconductor device. The internal voltage generating circuit produces an internal voltage at a high voltage level, as an internal voltage, in not only a standby section but also in an active section in response to a test operation signal activated in a test operation. Accordingly, dropping of the internal voltage in the standby section of the test operation and failure due to open or short circuiting are prevented. As a result, reliability of the semiconductor chip, by preventing the generation of latch-up caused by breakdown of internal circuits, is assured. | 09-29-2011 |
Kang-Youl Lee, Kyoungki-Do KR
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20090086557 | SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A synchronous semiconductor memory device including a data alignment reference pulse generating unit configured to generate a data alignment reference pulse in response to a data strobe signal (DQS), an alignment hold signal generating unit configured to generate an alignment hold signal, which is activated during a period corresponding to a postamble of the data strobe signal, in response to the data alignment reference pulse and a data input clock, and a data alignment unit configured to align input data in response to the data alignment reference pulse and the alignment hold signal. | 04-02-2009 |
Ki-Won Lee, Kyoungki-Do KR
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20080284475 | Semiconductor device having delay locked loop and method for driving the same - A delay locked loop includes: a control voltage generator configured to generate a voltage control signal having a voltage level corresponding to a phase difference between an external clock and a feedback clock; a voltage controlled delay line configured to generate a plurality of output signals by reflecting a different delay time on the external clock in response to the voltage control signal; an internal clock multiplexer configured to output one of the plurality of output signals as an internal clock in response to a skew information signal; a delay replica model configured to output the feedback clock by reflecting a delay of an actual clock/data path on the internal clock; and a skew information signal generator configured to generate the skew information signal. | 11-20-2008 |
20090302909 | SEMICONDUCTOR DEVICE HAVING DELAY LOCKED LOOP AND METHOD FOR DRIVING THE SAME - A delay locked loop includes: a control voltage generator configured to generate a voltage control signal having a voltage level corresponding to a phase difference between an external clock and a feedback clock; a voltage controlled delay line configured to generate a plurality of output signals by reflecting a different delay time on the external clock in response to the voltage control signal; an internal clock multiplexer configured to output one of the plurality of output signals as an internal clock in response to a skew information signal; a delay replica model configured to output the feedback clock by reflecting a delay of an actual clock/data path on the internal clock; and a skew information signal generator configured to generate the skew information signal. | 12-10-2009 |
20110227620 | SEMICONDUCTOR DEVICE HAVING DELAY LOCKED LOOP AND METHOD FOR DRIVING THE SAME - A delay locked loop includes: a control voltage generator configured to generate a voltage control signal having a voltage level corresponding to a phase difference between an external clock and a feedback clock; a voltage controlled delay line configured to generate a plurality of output signals by reflecting a different delay time on the external clock in response to the voltage control signal; an internal clock multiplexer configured to output one of the plurality of output signals as an internal clock in response to a skew information signal; a delay replica model configured to output the feedback clock by reflecting a delay of an actual clock/data path on the internal clock; and a skew information signal generator configured to generate the skew information signal. | 09-22-2011 |
Kyunghoon Lee, Kyoungki-Do KR
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20120241941 | Semiconductor Device and Method of Forming a Thermally Reinforced Semiconductor Die - A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM. | 09-27-2012 |
Kyung-Won Lee, Kyoungki-Do KR
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20090253263 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE CAPABLE OF DECREASING CRITICAL DIMENSION IN PERIPHERAL REGION - A method for fabricating a semiconductor device where a critical dimension in a peripheral region is decreased. The method includes the steps of: forming a silicon nitride layer on a substrate including a cell region and a peripheral region; forming a silicon oxynitride layer on the silicon nitride layer; forming a line-type photoresist pattern on the silicon oxynitride layer such that the photoresist pattern in the cell region has a width larger than that of a final pattern structure and the photoresist pattern in the peripheral region has a width that reduces an incidence of pattern collapse; etching the silicon oxynitride layer and the silicon nitride layer until widths of a remaining silicon oxynitride layer and a remaining silicon nitride layer are smaller than the width of the photoresist pattern used as an etch mask through suppressing generation of polymers; and over-etching the remaining silicon nitride layer. | 10-08-2009 |
Kyuwon Lee, Kyoungki-Do KR
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20110095403 | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die Disposed in a Cavity of an Interconnect Structure and Grounded through the Die TSV - A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die. | 04-28-2011 |
20110254146 | Semiconductor Device and Method of Forming Electrical Interconnection Between Semiconductor Die and Substrate with Continuous Body of Solder Tape - A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads. | 10-20-2011 |
20120126416 | Semiconductor Device and Method of Forming Partially-Etched Conductive Layer Recessed Within Substrate for Bonding to Semiconductor Die - A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate. | 05-24-2012 |
20120211892 | Semiconductor Device and Method of Forming WLCSP Structure Using Protruded MLP - A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars. | 08-23-2012 |
20120306097 | Semiconductor Device and Method of Forming WLCSP Structure using Protruded MLP - A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars. | 12-06-2012 |
20120326303 | Semiconductor Device and Method of Forming Partially-Etched Conductive Layer Recessed Within Substrate for Bonding to Semiconductor Die - A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate. | 12-27-2012 |
20130249090 | Semiconductor Device and Method of Forming Partially-Etched Conductive Layer Recessed Within Substrate for Bonding to Semiconductor Die - A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate. | 09-26-2013 |
20130292804 | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die Disposed in a Cavity of an Interconnect Structure and Grounded Through the Die TSV - A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die. | 11-07-2013 |
20140008783 | Semiconductor Device and Method of Forming Electrical Interconnection Between Semiconductor Die and Substrate with Continuous Body of Solder Tape - A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads. | 01-09-2014 |
Sang-Do Lee, Kyoungki-Do KR
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20100276388 | Method for fabricating capacitor - A method for fabricating a capacitor includes forming a first storage node (SN) oxide layer over a substrate, forming a second SN oxide layer over the first SN oxide layer, forming a mask pattern over the second SN oxide layer, dry-etching the first and the second SN oxide layers using the mask pattern as an etch barrier to form a capacitor region, and wet-etching a resultant structure including the capacitor region to enlarge a bottom width of the capacitor region, thereby forming a final capacitor region having the enlarged bottom width, wherein the first SN oxide layer comprises one portion of high impurity concentration and the other portion of low impurity concentration, the one portion corresponding to a region where the final capacitor region is to be formed. | 11-04-2010 |
Sang-Don Lee, Kyoungki-Do KR
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20100027362 | SEMICONDUCTOR MEMORY DEVICE FOR LOW VOLTAGE - A semiconductor memory device includes a first cell array including a plurality of unit cells and a bit line sense amplifying unit for sensing and amplifying data signals stored in the unit cells. Each unit cell is provided with a PMOS transistor and a capacitor. Therefore, the semiconductor memory device efficiently operates with low voltage without any degradation of operation speed. | 02-04-2010 |
Sinjae Lee, Kyoungki-Do KR
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20110037165 | Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die - A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers. | 02-17-2011 |
20110095403 | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die Disposed in a Cavity of an Interconnect Structure and Grounded through the Die TSV - A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die. | 04-28-2011 |
20110278705 | Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die - A semiconductor device is made by forming a heat spreader over a carrier. A semiconductor die is mounted over the heat spreader with a first surface oriented toward the heat spreader. A first insulating layer is formed over the semiconductor die and heat spreader. A via is formed in the first insulating layer. A first conductive layer is formed over the first insulating layer and connected to the heat spreader through the via and to contact pads on the semiconductor die. The heat spreader extends from the first surface of the semiconductor die to the via. A second insulating layer is formed over the first conductive layer. A second conductive layer is electrically connected to the first conductive layer. The carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first conductive layer. | 11-17-2011 |
20120038053 | Semiconductor Device and Method of Forming FO-WLCSP Having Conductive Layers and Conductive Vias Separated by Polymer Layers - A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure. | 02-16-2012 |
20130075919 | Semiconductor Device and Method of Forming FO-WLCSP Having Conductive Layers and Conductive Vias Separated by Polymer Layers - A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure. | 03-28-2013 |
20130292804 | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die Disposed in a Cavity of an Interconnect Structure and Grounded Through the Die TSV - A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die. | 11-07-2013 |
Si Woo Lee, Kyoungki-Do KR
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20100046131 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND ELECTROSTATIC DISCHARGE PROTECTION METHOD OF A SEMICONDUCTOR MEMORY DEVICE - An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD. | 02-25-2010 |
Sung-Kwon Lee, Kyoungki-Do KR
Patent application number | Description | Published |
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20080233490 | Mask rework method - A mask rework method includes forming a first carbon-containing hard mask layer and a first silicon-containing hard mask layer over an etch target layer, forming a first photoresist pattern over the first-silicon-containing hard mask layer, removing the first photoresist pattern, the first silicon-containing hard mask layer, and the first carbon-containing hard mask layer to generate a resulting structure, stacking a second carbon-containing hard mask layer and a second silicon-containing hard mask layer on the resulting structure, and forming a second photoresist pattern over the second silicon-containing hard mask layer. | 09-25-2008 |
20090121317 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a three dimensional type capacitor is provided. The method includes forming a first insulation layer including first contact layers over a substrate, forming a second insulation layer over the first insulation layer, forming second contact layers by using a material having an etch selectivity different from the first contact layers such that the second contact layers are connected with the first contact layers within the second insulation layer, forming an etch stop layer over the second insulation layer and the second contact layers, forming a third insulation layer over the etch stop layer, etching the third insulation layer and the etch stop layer to form first contact holes exposing the second contact layers, etching the exposed second contact layers to form second contact holes exposing the first contact holes, and forming bottom electrodes over the inner surface of the second contact holes. | 05-14-2009 |
Woon-Bok Lee, Kyoungki-Do KR
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20130242679 | SEMICONDUCTOR MEMORY DEVICE FOR CONTROLLING WRITE RECOVERY TIME - A semiconductor memory device includes a CAS latency mode detecting means for outputting a CAS latency control signal in response to a CAS latency mode; and an auto-precharge control means for controlling timing of an auto-precharge operation in response to the CAS latency control signal. | 09-19-2013 |
Yoon Sung Lee, Kyoungki-Do KR
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20100219476 | ELECTROSTATIC PROTECTION DEVICE FOR SEMICONDUCTOR CIRCUIT - The electrostatic protection device includes a semiconductor substrate having a well formed therein. At least two sets of transistor fingers, for example the NMOS type, are spaced apart from each other. Each set of the MOS fingers includes multiple gates arranged in parallel to each other in one direction, and sources and drains alternately arranged at both sides of the gates in the semiconductor substrate. A well pickup surrounding every set of the transistor fingers and extending between any two set of the fingers is formed. Metal wires are connected to at least two portions of each of the drains and are also connected to an input/output pad to which Electrostatic Discharge (ESD) excessive current is introduced. | 09-02-2010 |
Young Jin Lee, Kyoungki-Do KR
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20090200672 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process. | 08-13-2009 |
20100038788 | MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME - A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern. | 02-18-2010 |
20100193956 | MULTI-LAYER METAL WIRING OF SEMICONDUCTOR DEVICE PREVENTING MUTUAL METAL DIFFUSION BETWEEN METAL WIRINGS AND METHOD FOR FORMING THE SAME - A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer. | 08-05-2010 |
20120007240 | METAL WIRE FOR A SEMICONDUCTOR DEVICE FORMED WITH A METAL LAYER WITHOUT VOIDS THEREIN AND A METHOD FOR FORMING THE SAME - A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO | 01-12-2012 |