Patent application number | Description | Published |
20090016947 | RECYCLING OF HIGH-BOILING COMPOUNDS WITHIN AN INTEGRATED CHLOROSILANE SYSTEM - Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride. | 01-15-2009 |
20090031945 | SINGLE CRYSTAL AND SEMICONDUCTOR WAFER AND APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL - The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*10 | 02-05-2009 |
20100147209 | Polycrystalline Germanium-Alloyed Silicon And A Method For The Production Thereof - A rod having a length of 0.5 m to 4 m and having a diameter of 25 mm to 220 mm, comprising a high-purity alloy composed of 0.1 to 50 mol % germanium and 99.9 to 50 mol % silicon, the alloy having been deposited on a thin silicon rod or on a thin germanium-alloyed silicon rod, the deposited alloy having a polycrystalline structure. | 06-17-2010 |
20120100302 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON RODS - The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400-1000° C. is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor. | 04-26-2012 |
20130216466 | CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS - The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw. | 08-22-2013 |
20140004030 | POLYCRYSTALLINE SILICON PORTION AND METHOD FOR BREAKING A SILICON BODY | 01-02-2014 |
20140037959 | POLYCRYSTALLINE SILICON CHUNKS AND METHOD FOR PRODUCING THEM - The present invention relates to polycrystalline silicon chunks which are cubic and have a metal content of less than 200 pptw and a dopant content of less than 50 ppta. Methods for producing polycrystalline silicon chunks, include the steps of providing a polycrystalline silicon rod, comminuting the polycrystalline silicon rod into cubic chunks, and cleaning the polycrystalline silicon chunks, wherein comminution takes place using a spiked-roll crusher having at least one spiked roll, the spiked roll including W | 02-06-2014 |
20140295081 | TREATMENT OF STEEL SURFACES - The content of phosphorus in polycrystalline silicon prepared by the Siemens process is reduced by treating phosphorus-containing steel surfaces with an α-amino-functional alkoxysilane. The treated surface exhibits less corrosion in an atmosphere of moist hydrogen chloride, and less loss of phosphorus as a result. | 10-02-2014 |