Patent application number | Description | Published |
20080244503 | System for Coloring a Partially Colored Design in an Alternating Phase Shift Mask - A method of designing an alternating phase shifting mask for projecting an image of an integrated circuit design. Phase units are binary colorable within each unit of the hierarchical circuit design, e.g., cell, an array, a net, or array of nets and/or cells, the phase shapes. The assignment of phases or colors within a hierarchical unit will be correctly binary colored to satisfy the lithographic, manufacturability and other design rules, referred to collectively as coloring rules. During assembly with other units, the coloring of phases in a hierarchical unit may change (e.g., be reversed or flipped), but the correct binary colorability of a hierarchical unit is preserved, which simplifies assembly of the integrated circuit layout. | 10-02-2008 |
20090037866 | ALTERNATING PHASE SHIFT MASK OPTIMIZATION FOR IMPROVED PROCESS WINDOW - A method for designing alternating phase shift masks is provided, in which narrow phase shapes located between densely spaced design shapes are colored to allow a maximum amount of light transmission. After assigning and ensuring binary legalization of the phase shapes, the narrow phase shapes are assigned a color, such as 0° phase shift, that allows the more light transmission than the alternate or opposite color (e.g. 180° phase shift), which helps avoid printing errors such as resist scumming between closely spaced shapes, and maximizes the lithographic process window. | 02-05-2009 |
20090199151 | ELECTRICALLY DRIVEN OPTICAL PROXIMITY CORRECTION - An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received. A lithography simulation is run on the mask layout. An electrical characteristic is extracted from the output of the lithography simulation for each layer of the mask layout. A determination as to whether the extracted electrical characteristic is in conformance with a target electrical characteristic is made. Edges of the plurality of layered shapes in the mask layout are adjusted in response to determining that the extracted electrical characteristic for a layer in the mask layout fails to conform with the target electrical characteristic. | 08-06-2009 |
20090204930 | IPHYSICAL DESIGN SYSTEM AND METHOD - A design system for designing complex integrated circuits (ICs), a method of IC design and program product therefor. A layout unit receives a circuit description representing portions in a grid and glyph format. A checking unit checks grid and glyph portions of the design. An elaboration unit generates a target layout from the checked design. A data prep unit prepares the target layout for mask making. A pattern caching unit selectively replaces portions of the design with previously cached results for improved design efficiency. | 08-13-2009 |
20090290401 | PLACEMENT AND OPTIMIZATION OF PROCESS DUMMY CELLS - A method for laying out process dummy cells in relationship to inside memory cells of a memory array includes (a) calculating an initial process performance parameter for the memory array; (b) changing dummy cell layout configuration for a layer electrically connected to inside cells; (c) applying lithographic simulation and yield model for both the inside memory cells and the changed layout configuration process dummy cells; and (d) repeating steps (b) and (c) until yield is maximized. Checks may be performed to ensure that there is enough room to make the change and that there is no significant adverse effect to neighboring circuits. The process performance parameter may be yield or a process window for the inside memory cells. | 11-26-2009 |
20100017780 | DIFFERENTIAL ALTERNATING PHASE SHIFT MASK OPTIMIZATION - A method of designing a mask for projecting an image of an integrated circuit design in lithographic processing, wherein the integrated circuit layout has a plurality of segments of critical width. The method comprises creating a first mask design by aligning mask features used to assist in projecting critical width segments with the critical width segments of the integrated circuit design, such that the first mask design meets predetermined manufacturability design rules, and creating a second mask design by aligning mask features with the critical width segments of the integrated circuit design, such that the second mask design meets predetermined lithographic design rules in regions local to the critical width segments. The method then includes identifying design features of the second mask design that violate the predetermined manufacturability design rules, and then creating a third mask design derived from the second mask design wherein the mask features of the second mask design that violate the predetermined manufacturability rules are selectively replaced by mask features from the first mask design so that the third mask design meets the predetermined manufacturability design rules. By way of example, the mask features used to assist in projecting critical width segments may comprise alternating phase shifting regions or sub-resolution assist features. | 01-21-2010 |
20100122231 | ELECTRICALLY-DRIVEN OPTICAL PROXIMITY CORRECTION TO COMPENSATE FOR NON-OPTICAL EFFECTS - A contour of a mask design for an integrated circuit is modified to compensate for systematic variations arising from non-optical effects such as stress, well proximity, rapid thermal anneal, or spacer thickness. Electrical characteristics of a simulated integrated circuit chip fabricated using the mask design are extracted and compared to design specifications, and one or more edges of the contour are adjusted to reduce the systematic variation until the electrical characteristic is within specification. The particular electrical characteristic preferably depends on which layer is to be fabricated from the mask: on-current for a polysilicon; resistance for contact; resistance and capacitance for metal; current for active; and resistance for vias. For systematic threshold voltage variation, the contour is adjusted to match a gate length which corresponds to an on-current value according to pre-calculated curves for contour current and gate length at a nominal threshold voltage of the chip. | 05-13-2010 |
20110179391 | LEAKAGE AWARE DESIGN POST-PROCESSING - The present invention provides a method and computer program product for designing an on-wafer target for use by a model-based design tool such as OPC or OPC verification. The on-wafer target is modified by modifying a critical dimension so as to improve or optimize an electrical characteristic, while also ensuring that one or more yield constraints are satisfied. The use of an electrically optimized target can result in cost-effective mask designs that better meet the designers' intent. | 07-21-2011 |
20120110521 | Split-Layer Design for Double Patterning Lithography - A mechanism is provided for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL). The set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure are identified. The set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design. Each of the first plurality of minimum distances in the set of single-layer design rules are modified with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules. The set of split-layer design rules comprise a second plurality of minimum distances that are required by a set of second shapes and a set of third shapes in a split-layer design. The set of split-layer design rules are then coded into a design rule checker. | 05-03-2012 |
20120167029 | PHYSICAL DESIGN SYSTEM AND METHOD - A design system for designing complex integrated circuits (ICs), a method of IC design and program product therefor. A layout unit receives a circuit description representing portions in a grid and glyph format. A checking unit checks grid and glyph portions of the design. An elaboration unit generates a target layout from the checked design. A data prep unit prepares the target layout for mask making. A pattern caching unit selectively replaces portions of the design with previously cached results for improved design efficiency. | 06-28-2012 |
20130061183 | Multiple Patterning Layout Decomposition for Ease of Conflict Removal - A mechanism is provided for multiple patterning lithography with conflict removal aware coloring. The mechanism makes multiple patterning coloring aware of the conflict removal overhead. The coloring solution explicitly considers ease of conflict removal as one of the coloring objectives. The mechanism pre-computes how much shapes can move in each direction, The mechanism generates a conflict graph where nodes represent shapes in the layout and edges represent conflicts between shapes. The mechanism assigns weights to edges based on available spatial slack between conflicting features, The mechanism then uses the weights to guide multiple patterning coloring. The mechanism prioritizes conflicting features with higher weights to be assigned different colors. | 03-07-2013 |
20130061185 | MASK ASSIGNMENT FOR MULTIPLE PATTERNING LITHOGRAPHY - A mechanism is provided for mask assignment for triple patterning lithography. The mechanism identifies tip-to-tip (TT), tip-to-side (TS), and side-to-side (SS) conflicting parts by design rule dependent projection. The mechanism finds stitch location for TT, TS, and SS conflicts separately. The mechanism colors TT, TS, and SS conflicting parts with mask0/mask1, mask0/mask2, mask1/mask2 coloring cycle with each type colored separately. The mechanism uses existing infrastructure of two-way coloring. As a first objective, the mechanism attempts to minimize conflicts. As a second objective, the mechanism attempts to minimize the number of stitches by assigning the two sides of stitches to the same mask. Once coloring of all conflicting parts is done, the mechanism colors non-conflicting parts to maximize minimum overlap of exposures and to use both colors if two sides are different colors and one color if both sides are the same color. | 03-07-2013 |
20140065728 | METHOD FOR POST DECOMPOSITION DENSITY BALANCING IN INTEGRATED CIRCUIT LAYOUTS, RELATED SYSTEM AND PROGRAM PRODUCT - Embodiments of the invention provide a method of modifying a decomposed integrated circuit (IC) layout. The method includes providing a decomposed IC layout, the decomposed IC layout including a set of colors; determining a density of each color in the decomposed IC layout, wherein each color includes a plurality of features formed by a related exposure; separating the decomposed IC layout into a set of tiles; determining a first color with a minimum density in one tile of the set of tiles and a second color with a maximum density in tile, the first color including a first set of first features and the second color including a first set of second features; and replacing the first set of second features on the tile with a second set of first features, and the first set of first features on the tile with a second set of second features. | 03-06-2014 |
20140359548 | ORTHOGONAL CIRCUIT ELEMENT ROUTING - Various embodiments include computer-implemented methods, computer program products and systems for aligning a set of orthogonal circuit elements in an integrated circuit (IC) layout. In some embodiments, a computer-implemented method for aligning a set of orthogonal circuit elements in an IC layout includes: classifying each orthogonal circuit element in the set of orthogonal circuit elements as including a first space-designated edge and a second space-designated edge; and aligning each orthogonal circuit element on an edge placement grid according to the first space-designated edge and the second space-designated edge, the edge placement grid having a first set of space-designated grid lines separated by a first distance, and a second set of space-designated grid lines separated by a second distance, wherein the first set of space-designated grid lines is separated from the second set of space-designated grid lines by an offset distance. | 12-04-2014 |
20150046888 | MASK DESIGN AND DECOMPOSITION FOR SIDEWALL IMAGE TRANSFER - A design level compatible with a sidewall image transfer process employs an alternating grid of mandrel-type line tracks and non-mandrel-type line tracks. Target structure design shapes are formed such that all vertices of the target structure design shapes are on the grid. The target structure design shapes are classified as mandrel-type design shapes and non-mandrel-type design shapes depending on the track type of the overlapping line tracks for lengthwise portions. All mandrel-type line tracks and straps of the mandrel-type design shapes less lateral strap regions of the non-mandrel-type design shapes collectively form mandrel design shapes, which can be employed to generate a first lithographic mask. Sidewall design shapes are generated from the mandrel design shapes. Blocking shapes for a second lithographic mask can be generated by selecting all areas that are not included in the target structure design shapes or the sidewall design shapes. | 02-12-2015 |
20150089457 | Hierarchical Approach to Triple Patterning Decomposition - A mechanism is provided in a data processing system for hierarchical triple patterning decomposition. The mechanism receives an integrated circuit design. The mechanism enforces boundary conditions on three-color mapping of shapes in a layer of the integrated circuit design at the cell level. The mechanism places cells in the layer of the integrated circuit design. The mechanism identifies post placement coloring conflicts and resolves the post placement coloring conflicts with two-color flipping in coloring runs containing one or more conflicts. | 03-26-2015 |