Labonte
Andre Labonte, Scarborough, ME US
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20120119262 | SiGe Heterojunction Bipolar Transistor and Method of Forming a SiGe Heterojunction Bipolar Transistor - A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies in between. A protective plug is formed in the notch of the SiGe base region so that thick non-conductive regions can be formed on the sides of the collector region and the cap region. Once the non-conductive regions have been formed, the protective plug is removed. An extrinsic base is then formed to lie in the notch and touch the base region, followed by the formation of isolation regions and an emitter region. | 05-17-2012 |
Andre Labonte, Mechanicville, NY US
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20150279738 | SELF-ALIGNED CONTACTS AND METHODS OF FABRICATION - Embodiments of the present invention provide an improved contact and method of fabrication. A dielectric layer is formed over transistor structures which include gates and source/drain regions. A first etch, which may be a reactive ion etch, is used to partially recess the dielectric layer. A second etch is then used to continue the etch of the dielectric layer to form a cavity adjacent to the gate spacers. The second etch is highly selective to the spacer material, which prevents damage to the spacers during the exposure (opening) of the source/drain regions. | 10-01-2015 |
Andre P. Labonte, Scarborough, ME US
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20110042778 | SEMICONDUCTOR DEVICE HAVING LOCALIZED INSULATED BLOCK IN BULK SUBSTRATE AND RELATED METHOD - One or more trenches can be formed around a first portion of a semiconductor substrate, and an insulating layer can be formed under the first portion of the semiconductor substrate. The one or more trenches and the insulating layer electrically isolate the first portion of the substrate from a second portion of the substrate. The insulating layer can be formed by forming a buried layer in the substrate, such as a silicon germanium layer in a silicon substrate. One or more first trenches through the substrate to the buried layer can be formed, and open spaces can be formed in the buried layer (such as by using an etch selective to silicon germanium over silicon). The one or more first trenches and the open spaces can optionally be filled with insulative material(s). One or more second trenches can be formed and filled to isolate the first portion of the substrate. | 02-24-2011 |
20130178055 | Methods of Forming a Replacement Gate Electrode With a Reentrant Profile - Disclosed herein are methods of forming a replacement gate structure having a reentrant profile. In one example, the method includes forming a layer of material for a sacrificial gate electrode, wherein the layer of material includes at least one impurity that changes the etch rate of the layer of material as compared to an etch rate for the layer of material without the impurity, and wherein a concentration of the at least one impurity varies along a direction that corresponds to a thickness of the layer of material, and performing another etching process on the layer of material to define a sacrificial gate electrode. The method concludes with the steps of performing another etching process to remove the sacrificial gate electrode so as to at least partially define a gate opening in a layer of insulating material and forming a replacement gate structure in the gate opening. | 07-11-2013 |
20130200441 | INTEGRATED CIRCUIT CONTACT STRUCTURE AND METHOD - An integrated circuit having a mis-alignment tolerant electrical contact is formed by providing a semiconductor containing substrate over which is a first FET gate laterally bounded by a first dielectric region, replacing an upper portion of the first FET gate with a second dielectric region, applying a mask having an opening extending partly over an adjacent source or drain contact region of the substrate and over a part of the second dielectric region above the first FET gate, forming an opening through the first dielectric region extending to the contact region and the part of the second dielectric region, and filling the opening with a conductor making electrical connection with the contact region but electrically insulated from the first FET gate by the second dielectric region. A further FET gate may also be provided having an electrical contact thereto formed separately from the source-drain contact. | 08-08-2013 |
20130200471 | ALIGNMENT TOLERANT SEMICONDUCTOR CONTACT AND METHOD - An alignment tolerant electrical contact is formed by providing a substrate on which is a first electrically conductive region (e.g., a MOSFET gate) having an upper surface, the first electrically conductive region being laterally bounded by a first dielectric region, applying a mask having an opening extending partly over a contact region (e.g., for the MOSFET source or drain) on the substrate and over a part of the upper surface, forming a passage through the first dielectric region extending to the contact region and the part of the upper surface, thereby exposing the contact region and the part of the upper surface, converting the part of the upper surface to a second dielectric region and filling the opening with a conductor making electrical contact with the contact region but electrically insulated from the electrically conductive region by the second dielectric region. | 08-08-2013 |
Andre P. Labonte, Mechanicville, NY US
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20150311082 | SELF-ALIGNED GATE CONTACT FORMATION - Provided are approaches for forming gate and source/drain (S/D) contacts. Specifically, a gate contact opening is formed over at least one of a set of gate structures, a set of S/D contact openings is formed over fins of the semiconductor device, and a metal material is deposited over the semiconductor device to form a gate contact within the gate contact opening and a set of S/D contacts within the set of S/D contact openings. In one approach, nitride remains between the gate contact and at least one of the S/D contacts. In another approach, the device includes merged gate and S/D contacts. This approach provides selective etching to partition areas where oxide will be further removed selectively to nitride to create cavities to metallize and create contact to the S/D, while isolation areas between contact areas are enclosed in nitride and do not get removed during the oxide etch. | 10-29-2015 |
Andre Paul Labonte, Lewiston, ME US
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20110287596 | SYSTEM AND METHOD FOR PROVIDING LOW VOLTAGE HIGH DENSITY MULTI-BIT STORAGE FLASH MEMORY - A system and method is disclosed for providing a low voltage high density multi-bit storage flash memory. A dual bit memory cell of the invention comprises a substrate having a common source, a first drain and first channel, and a second drain and a second channel. A common control gate is located above the source. A first floating gate and a second floating gate are located on opposite sides of the control gate. Each floating gate is formed with a sharp tip adjacent to the control gate and an upper curved surface that follows a contour of the surface of the control gate. The sharp tips of the floating gates efficiently discharge electrons into the control gate when the memory cell is erased. The curved surfaces increase capacitor coupling between the control gate and the floating gates. | 11-24-2011 |
Daniel Joseph Labonte, Loves Park, IL US
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20090043478 | Method and device for monitoring an internal combustion engine with a duel fuel injection system - In a dual fuel injected internal combustion engine, the primary injected fuel is gasoline with a secondary fuel injected consisting of Ethanol, Methanol, a combination of Ethanol and Methanol or a mixture of either fuel with water. The method and device claimed is an electronic controller that monitors the flow rate and or effect of the secondary injected fuel though sensory input signals and outputs a control signal to an external device which will reduce the internal combustion engines power output to a safe level in the event that the flow of the secondary fuel injected is not within a predetermined specified range and or the effect of the secondary fuel injected is not within a predetermined range as detected by an automotive inlet air temperature sensor or automotive knock sensor there by preventing damage to the internal combustion engine from detonation or pre-ignition of the primary air fuel charge as a result of reduced quantity of secondary injected fuel. The external control device could reduce timing of the internal combustion engine spark event or reduce boost pressure of a forced induction system or increase fueling of the primary injected fuel upon receiving an output electrical signal from claimed monitoring device. | 02-12-2009 |
Don R. Labonte, Baton Rouge, LA US
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20080271216 | Sweetpotato plant named 'Evangeline' - A new variety of sweetpotato identified as ‘Evangeline’ is disclosed having disease resistance to both southern root-knot nematode and soil rot, a deep orange flesh, a high sucrose content, and high yield characteristics. | 10-30-2008 |
20120084893 | Sweetpotato plant named 'Bonita' - A new variety of sweetpotato identified as ‘Bonita’ is disclosed as having disease resistance to both southern root-knot nematode and soil rot, a white flesh, a high dry matter content, and high yield characteristics. | 04-05-2012 |
20130133118 | Sweetpotato plant named '05-111' - A new variety of sweetpotato identified as ‘05-111’ is disclosed having disease resistance to both | 05-23-2013 |
20130133119 | SWEETPOTATO PLANT NAMED '07-146' - A new variety of sweetpotato identified as ‘07-146’ is disclosed having disease resistance to | 05-23-2013 |
20140317801 | Sweetpotato plant named 'LA04-175' - A new variety of sweetpotato, identified as ‘LA04-175’, is disclosed having disease resistance to both | 10-23-2014 |
20150264851 | Sweetpotato plant named 'LA06-52' - A new variety of sweetpotato identified as ‘LA06-52’ is disclosed having disease resistance to Fusarium wilt, Rhizopus soft rot (intermediate), southern root-knot nematode, and Streptomyces soil rot, an orange flesh, copper skin and high yield characteristics. | 09-17-2015 |
Eric Labonte, Fremont, CA US
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20160067242 | NHE3-BINDING COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Provided are NHE3-binding and/or NHE3-modulating agents having activity as phosphate transport inhibitors, including inhibitors of phosphate transport in the gastrointestinal tract and the kidneys, and methods for their use as therapeutic or prophylactic agent. | 03-10-2016 |
Eric Labonte, Redwood City, CA US
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20130336918 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. The compounds have the following structure (I): | 12-19-2013 |
20130336919 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. The compounds have the following structure (I): | 12-19-2013 |
20130336920 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. The compounds have the following structure (I): | 12-19-2013 |
20130336921 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. The compounds have the following structure (I): | 12-19-2013 |
20140023611 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. Methods associated with preparation and use of such compounds, as well as pharmaceutical compositions comprising such compounds, are also disclosed. | 01-23-2014 |
20150157637 | COMPOUNDS AND METHODS FOR INHIBITING PHOSPHATE TRANSPORT - Compounds having activity as phosphate transport inhibitors, more specifically, inhibitors of intestinal apical membrane Na/phosphate co-transport, are disclosed. The compounds have the following structure (I): | 06-11-2015 |
Greg Labonte, Phoenix, AZ US
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20130226491 | METHODS AND APPARATUS FOR HYBRID OUTLIER DETECTION - Methods and apparatus for data analysis according to various aspects of the present invention are configured to identify statistical outliers in test data for components, including hybrid outliers representing outliers within subsets of larger data populations. A method and apparatus according to various aspects of the present invention may operate in conjunction with a test system having a tester, such as automatic test equipment (ATE) for testing semiconductors. | 08-29-2013 |
Greg I. Labonte, Phoenix, AZ US
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20100036637 | METHODS AND APPARATUS FOR HYBRID OUTLIER DETECTION - Methods and apparatus for data analysis according to various aspects of the present invention are configured to identify statistical outliers in test data for components, including hybrid outliers representing outliers within subsets of larger data populations. A method and apparatus according to various aspects of the present invention may operate in conjunction with a test system having a tester, such as automatic test equipment (ATE) for testing semiconductors. | 02-11-2010 |
Jason Labonte, Denver, CO US
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20130196800 | Compression Collar Apparatus - A compression collar apparatus is disposed upon an article providing an axial manual grasping stop upon the article, the apparatus includes a first arcuate element having first proximal and distal portions, the first distal portion including an engagement segment. Also, a second arcuate element having second proximal and distal portions, the first proximal portion and the second proximal portion have a first pivotal connection that enables open and closed states of the first and second arcuate elements. Further, a flexible retention arch beam having states of; free, de-arched, and intermediate, includes beam proximal and distal portions, the beam proximal portion and the second distal portion have a second pivotal connection, in the intermediate state the beam distal portion having an interlocking section that has a variable removable engagement with the engagement segment, resulting in the closed state of the first and second arcuate elements about the article. | 08-01-2013 |
John Labonte, Denison, TX US
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20130001464 | APPARATUS AND METHOD FOR STEAM DISINFECTION OF A POWDER - The present invention provides a system for the sterilization of natural products without negatively effecting the properties of the system having a sterilization chamber; a sample area within the sterilization chamber to hold one or more steam permeable containers; a heater source connected to the sterilization chamber for heating the sterilization chamber to a predetermined temperature; a heater control unit connected to the heater source for controlling the predetermined temperature; a pressure source connected to the sterilization chamber for pressurizing the sterilization chamber to a predetermined pressure; a pressure control unit connected to the pressure source for controlling the predetermined pressure; a steam aperture for supplying steam to the sterilization chamber; a steam control unit connected to the temperature and duration of the steam; and an interface connected to the heater control unit, pressure control unit, and steam control unit. | 01-03-2013 |
Joseph Labonte, Indianapolis, IN US
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20140059759 | Automatic Liquid Handling and Temperature Control for a Spa - A spa includes a housing forming a vessel, an opening formed in the vessel, a valve fluidly coupled to the opening, a liquid sensor configured to measure an amount of liquid in the vessel, and a controller operatively connected to the valve and the liquid sensor. The controller operates the valve to drain liquid the vessel through the opening, and operates the valve to fill the vessel with liquid from a liquid source when a predetermined amount of liquid has drained from the vessel. | 03-06-2014 |
20140264109 | REDUCED NOISE VALVE MECHANISM - A valve assembly is provided to control the flow of a fluid therethrough. The valve assembly includes a valve body and a pressure-regulating assembly. The valve body defines an inlet, an outlet, and a flow path extending therebetween. The pressure-regulating assembly includes a longitudinally extending piston tube, a venturi element, and a vent. The piston tube is shiftably mounted in the valve body and at least in part defines an outer chamber. The flow path extends through the piston tube. The venturi element is disposed in the flow path. The vent fluidly interconnects the flow path and the outer chamber such that a pressure drop associated with fluid flow through the venturi element draws fluid from the outer chamber through the vent and into the flow path. | 09-18-2014 |
Laurent Labonte, St Laurent Du Var FR
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20140355998 | METHOD AND DEVICE FOR SYNCHRONIZING ENTANGLEMENT SOURCES FOR A QUANTUM COMMUNICATION NETWORK - According to one aspect, the invention relates to a device ( | 12-04-2014 |
Paula W. Labonte, Clarksburg, MA US
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20150084325 | SELF-STANDING DESKTOP CALENDAR - A self-standing desktop calendar having first and second rigid metal panels and a plurality of pages therebetween all being rotatably connected by a spiral ring through a plurality of apertures in the each of the panels and the pages. A planar base is included having opposing parallel sidewalls with slots for receiving the bottoms of the panels to enable the calendar to stand upright on a desk. The sidewalls of the base fit around the bottom of the panels when the calendar is in a closed configuration. | 03-26-2015 |
Tanzina Labonte, Boston, MA US
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20110200582 | LIPIDS, LIPID COMPOSITIONS, AND METHODS OF USING THEM - Disclosed are formulation and optimization protocols for delivery of therapeutically effective amounts of biologically active agents to liver, tumors, and/or other cells or tissues. Also provided are compositions and uses for cationic lipid compounds of formula (I). | 08-18-2011 |
Tanzina Labonte, Cambridge, MA US
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20140309277 | LIPIDS, LIPID COMPOSITIONS, AND METHODS OF USING THEM - Disclosed are formulation and optimization protocols for delivery of therapeutically effective amounts of biologically active agents to liver, tumors, and/or other cells or tissues. Also provided are compositions and uses for cationic lipid compounds of formula (I). | 10-16-2014 |