Patent application number | Description | Published |
20090028005 | WRISTWATCH-TYPE MOBILE DEVICE - Provided is a wristwatch-type mobile device. The wristwatch-type mobile device includes a wristwatch device, a mobile device, and an I/O device. The I/O device is selectively used as one of an output device of the wristwatch device and an I/O device of the mobile device. | 01-29-2009 |
20090261389 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION, AND METHOD OF FABRICATING THE TRANSISTOR - A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga. | 10-22-2009 |
20100006837 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR - Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process. | 01-14-2010 |
20100108296 | THIN COOLING DEVICE - Provided is a vapor-liquid phase change cooling device, which may be manufactured with no limitation of thickness. | 05-06-2010 |
20100141411 | TOUCH SCREEN AND METHOD OF OPERATING THE SAME - Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole. | 06-10-2010 |
20100144088 | METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME - Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide. | 06-10-2010 |
20100155684 | NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME - Provided are a non-volatile memory device and a method of forming the non-volatile memory device. The non-volatile memory device includes a substrate, a lower electrode on the substrate, a diffusion barrier preventing the diffusion of a space charge on the lower electrode, a charge storage layer having a space charge limited characteristic on the diffusion barrier, and an upper electrode on the charge storage layer. | 06-24-2010 |
20100235560 | INPUT/OUTPUT EXPANSION DEVICE FOR PORTABLE ELECTRONIC APPARATUS - Provided is an input/output (I/O) expansion device for a portable electronic apparatus having a port to which an external expansion device can be connected. The I/O expansion device includes: a display body having at least one display portion; and at least one I/O connector formed at a portion of the display body to be electrically and physically attached to and separated from the port of the portable electronic apparatus. Therefore, it is possible to provide a multi-function I/O expansion device that can be electrically and physically attached and separated. | 09-16-2010 |
20100237374 | Transparent Organic Light Emitting Diode Lighting Device - Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes. | 09-23-2010 |
20100243994 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-30-2010 |
20110056671 | SOLID TYPE HEAT DISSIPATION DEVICE - Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers. | 03-10-2011 |
20110133257 | TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer. | 06-09-2011 |
20110266542 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield. | 11-03-2011 |
20110305062 | MEMORY CELL AND MEMORY DEVICE USING THE SAME - Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations. | 12-15-2011 |
20120134197 | MEMORY CELL AND MEMORY DEVICE USING THE SAME - Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated. | 05-31-2012 |
20120161234 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region. | 06-28-2012 |
20120225500 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-06-2012 |
20120315729 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 12-13-2012 |
20130081570 | MICRO BALLPOINT PEN AND PRINTING APPARATUS - Provided are a micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel. | 04-04-2013 |
20130119468 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin-film transistor may include a drain electrode, a source electrode, an active layer, a gate electrode, and a gate insulating layer. In a vertical sectional view, the gate insulating layer may be disposed between the active layer and the gate electrode to include a first inorganic layer, an organic layer, and a second inorganic layer sequentially stacked. According to a method of fabricating the thin-film transistor, the gate insulating layer may be formed between the steps of forming the active layer and the second electrode layer or between the steps of forming the first electrode layer and the second electrode layer. | 05-16-2013 |
20130141398 | DEVICE FOR MEASURING WRITING PRESSURE OF ELECTRONIC PEN - A device for measuring a writing pressure of electronic pen using a change of capacitance is disclosed. The device for measuring a writing pressure of electronic pen may include first and second fixed plates; a moving plate which constitutes a capacitive sensor together with the first and second fixed plates and moves between the first and second fixed plates according to a change of writing pressure; a tip which adheres to the moving plate to generate a writing pressure; and an elastic body restoring the moving plate to an original location when the moving plate moves from between the first and second fixed plates in a first direction. | 06-06-2013 |
20130161704 | TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer. | 06-27-2013 |
20130189815 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 07-25-2013 |
20130189816 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 07-25-2013 |
20130341610 | TRANSPARENT ORGANIC LIGHT EMITTING DIODE LIGHTING DEVICE - Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes. | 12-26-2013 |
20140084283 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen. | 03-27-2014 |