| Patent application number | Description | Published |
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| 20140083431 | RESPIRATORY MASK AND METHOD FOR MANUFACTURING A RESPIRATORY MASK - A respiratory mask, a mould for a respiratory mask, as well as to a method for producing a respiratory mask are disclosed, in which manufacturability and usability of respiratory masks are improved. A respiratory mask is disclosed for administering a breathable gas to a patient, the respiratory mask comprising a first component formed from a flexible material and a second component formed from a material that is more rigid than the flexible material, wherein the first component is formed onto the second component by an overmoulding process. | 03-27-2014 |
| 20140090648 | METHOD AND APPARATUS FOR TREATING APNEA/HYPOPNEA - Methods and/or apparatuses for treating sleep-disordered breathing (SDB) are provided. In particular, systems and/or methods are provided which may temporarily boost the pressure of a supply of breathable gas provided by an AutoSet device for the treatment of hypopnea. In certain example embodiments, a supply of breathable is provided to patients to treat apneas and/or hypopneas. The presence and/or absence of apneas and/or hypopneas are detected (e.g. by monitoring the Apnea-Hypopnea Index). When hypopnea events are detected, the pressure of the supply of breathable gas temporarily is increased above the Pcrit and/or CPAP levels, at least during patient inspiration. When the hypopnea events are normalized, the pressure is reduced. In certain example embodiments, the pressure will not be increased when a non-hypopnea event is detected at the same time as a hypopnea event. | 04-03-2014 |
| 20140137871 | PATIENT INTERFACE - A patient interface for use with the administration of CPAP therapy to a patient, comprising: a body for connection with a supply of pressurized breathable gas pressurized above ambient; and a compliant patient contacting element to communicate the pressurized gas to at least the patient's nasal passages, the element including a multilayered cushioning interface, the interface comprising an interior layer and an exterior layer being provided in spaced relation to the interior layer, the exterior layer being elastically and resiliently movable towards and away the interior layer in use. Along at least a portion of the perimeter of the exterior layer, a surface of the exterior layer is deformable from the spaced relation to abut against and contact against a surface of the interior layer in dependence at least in part on a deformation force applied to the exterior layer. | 05-22-2014 |
| 20140150238 | METHOD FOR ASSEMBLING A PATIENT INTERFACE - A respiratory mask assembly includes a rigid mask frame and a cushion. A clip secures the cushion to the frame. | 06-05-2014 |
| 20140158134 | RESPIRATORY APPARATUS - A flow generator for generating a flow of pressurized breathable gas includes a cylindrical housing and a motor supported in the housing. The motor has a shaft having a first end and a second end opposite the first end. The shaft is generally coincident with an axis of the motor. A first impeller is attached to the first end of the shaft and a second impeller is attached to the second end of the shaft. A stator directs an air flow from the first impeller back towards the motor axis. The housing includes an inlet adjacent the first end of the shaft having an inlet axis generally coincident with the motor axis and at least one outlet between the first and second impellers. The at least one outlet has an outlet axis generally tangential to the motor axis. | 06-12-2014 |
| 20140158137 | ERGONOMIC AND ADJUSTABLE RESPIRATORY MASK ASSEMBLY WITH CUSHION - A respiratory mask assembly for delivering breathable gas to a patient includes a frame having a front surface and a rear surface adapted in use to face the patient. A cushion having a side wall is removably attachable to the frame. The cushion has a rim extending away from the side wall, and a membrane provided to substantially surround the rim. An inner edge of the membrane defines an aperture, the aperture having a generally trapezoidal shape. | 06-12-2014 |
| 20140202464 | CUSHION FOR A RESPIRATORY MASK ASSEMBLY - A respiratory mask assembly including a frame and a cushion provided to the frame. The cushion including a non-face contacting portion removably attached to the frame and a face-contacting portion adapted to engage a patient's face. The face-contacting portion includes a side wall, a rim extending from the side wall and curving inwardly into a cavity of the cushion, and a membrane substantially surrounding the rim and including an inside surface spaced from an outside surface of the rim. The cushion includes a gusset portion extending radially outwardly from the side wall of the face-contacting portion and a reinforcing ring between the gusset portion and the face-contacting portion. The reinforcing ring is constructed and arranged to act as a stiffening hoop to reduce the tendency of the cushion to expand when under pressure. | 07-24-2014 |
| 20140261434 | INTERCHANGEABLE MASK ASSEMBLY - A system of breathing arrangements for delivering breathable gas to a patient includes at least first and second cushion components, e.g., full-face, nasal, nasal prongs, nose tip, and/or a combination of any of the above, including a nasal or full-face cushion and nasal prongs/nozzles combination, etc., that are different from one another in at least one aspect, and a common frame assembly configured to support each of the first and second cushion components. Various embodiments are directed to a full-face or nasal mask used with a frame having lateral connector portions having a stiffening member. The mask assembly may include a nose height adjustment device for the height of the cushion, or a cushion adjustment member by which the position of the cushion may be adjusted relative to the frame. The mask assembly may include a chin strap assembly. | 09-18-2014 |
| 20140283822 | MASK FOR DELIVERY OF RESPIRATORY THERAPY TO A PATIENT - A mask for delivery of respiratory therapy to a patient may include one or more of the following improvements: rigidizer provided to headgear strap, locking clip/clip receptacle headgear connection, keyed headgear buckles, lotion dispenser on frame, rotatable prongs to adjust orientation, alignment indicators provided to prong, cushion and/or frame, chin flap with bellows arrangement, vent holes positioned away from gas entry port, and vent holes to direct washout gas at an angle. | 09-25-2014 |
| 20140283827 | CONNECTORS FOR CONNECTING COMPONENTS OF A BREATHING APPARATUS - A breathing apparatus includes components, including, but not limited to, a flow generator, a patient interface, and a delivery conduit. A connector for connecting components of the breathing apparatus includes a male connector, including a recess, extending from a first component, and a female connector, including a lever pivotally connected thereto, extending from a second component. A switch indicates a connection state of the connector. The switch includes a ring provided in an end of the first or second component and the ring includes a projection extending through an aperture in the end of the first or second component. The projection is movable between a first position and a second position to indicate the state of the connector. | 09-25-2014 |
| 20140283836 | METHODS AND APPARATUS FOR CONTROLLING MASK LEAK IN CPAP TREATMENT - A method of operating a device for treating sleep disordered breathing (SDB), wherein the device provides continuous positive airway pressure during sleep, includes determining whether treatment pressure at the patient interface is below a desired value, in response to the determining, increasing pressure generated by the flow generator, in response to the increasing, making a determination that the increase in flow generator pressure has resulted in less than a desired increase in treatment pressure at the patient interface, and in response to the determination, reducing or inhibiting further increase of the flow generator pressure. | 09-25-2014 |
| 20140338664 | ERGONOMIC AND ADJUSTABLE RESPIRATORY MASK ASSEMBLY WITH FRAME - A respiratory mask assembly for delivering breathable gas to a patient includes a frame having a front surface and a rear surface, opposite the front surface, and adapted in use to face the patient. The frame defines an inner wall and an outer wall extending from the rear surface, the inner and outer walls being spaced to define a channel therebetween. A cushion is removably attachable to the frame such that the cushion and frame are repeatably engagable with and disengagable from one another. The cushion includes a side wall to be inserted into the channel of the frame, the side wall having a first interlocking surface that engages a second interlocking surface provided in the channel when the cushion and frame are engaged with one another. The first and second interlocking surfaces interlock with one another to removably attach the cushion to the frame. | 11-20-2014 |
| 20140345614 | METHOD AND APPARATUS FOR HUMIDIFICATION OF BREATHABLE GAS WITH PROFILED DELIVERY - A method and apparatus for delivering breathable gas to a user includes a humidifying unit that is controllable to humidify the gas in accordance with a variable humidity profile such that the gas is delivered to the user at variable humidity levels, e.g., during a treatment session. | 11-27-2014 |
| 20140345618 | MASK AND VENT ASSEMBLY THEREFOR - A mask for use with a system for supplying breathable gas pressurised above atmospheric pressure to human or animal's airways includes a mask shell which is, in use, in fluid communication with a gas supply conduit and a gas washout vent assembly. The gas washout vent assembly includes at least one gas washout orifice extending from a first side of the vent assembly positioned, in use, adjacent to human or animal's face and a second side positioned, in use, adjacent the atmosphere. The cross-sectional area of the orifice at the first side is larger than the cross-sectional area of the orifice at the second side. | 11-27-2014 |
| 20140360504 | CPAP MASK AND SYSTEM - A continuous positive air pressure (“CPAP”) or ventilator system includes a mask and an air flow generator. The air flow generator is mounted or provided to the mask's wearer. In one embodiment, air flow generator is mounted on the mask. | 12-11-2014 |
| 20140360506 | FULL-FACE MASK AND MASK CUSHION THEREFOR - A full-face cushion comprises a substantially triangularly shaped frame from which extends a membrane. The frame has a scalloped edge by which the cushion is affixed to a mask body to form a full-face mask. The membrane has an aperture into which the wearer's nose is received. The member is spaced away from the rim of the frame, and its outer surface is of substantially the same shape as the rim. Respective notches receive the bridge of the wearer's nose. The wearer's nose and lips are received through the aperture into the chamber within the mask body. The seal forming portion thus contacts both the surface of the wearer's nose and a portion of the wearer's face in the region between the bottom lip and the chin, and around the sides and over the bridge of the nose. The shape of the seal forming portion is particularly suited to effectively seal the difficult region of the facial contour that is the crease between the sides of the nose and the face. | 12-11-2014 |
| 20140366877 | VENTLESS MASK CPAP SYSTEM - A CPAP or other ventilation system includes a mask, a flow generator, a positive or high pressure line to provide positive or high pressure air from the flow generator to the mask and a vacuum or return line provided to actively extract exhaled gas from the breathing chamber and/or the air delivery conduit of the mask. The vacuum or return line includes a vent outlet preferably positioned remote from the mask. | 12-18-2014 |
| 20140373834 | MASK AND HEADGEAR CONNECTOR - A connector arrangement joining a respiratory mask and headgear is adapted for single-handed disengagement by the patient. A first, rigid connector part is formed into the rigid mask frame, with a mating second connector attached to a strap of the headgear. The connectors are held away from the patient's face by the connection to the mask frame. | 12-25-2014 |
| 20150190605 | POSITIVE AIRWAY PRESSURE DEVICE - A positive airway pressure (PAP) device for supplying a flow of breathable gas to a patient includes a flow generator configured to pressurize a flow of breathable gas and a humidifier configured to receive and humidify the pressurized flow of breathable gas from the flow generator. The PAP device also includes a power source. The flow generator, humidifier and power source are positioned so that heat generated by at least one of the flow generator and the power source is conveyed to water in the humidifier. | 07-09-2015 |
| 20150196725 | FLOW GENERATOR MESSAGE SYSTEM - A flow generator for delivering breathable gas to a patient includes a processor coupled with operation sensors and a user interface. The processor is programmed to generate at least one of time-based or event-based messages relating to at least one of flow generator operation, flow generator service, flow generator use, patient health, peripheral devices and services, patient treatment, and reminders. Time-based messages are generated at predetermined time intervals based on either time of use or elapsed time. The event-based messages are generated based on signals from the operation sensors. The user interface is configured to deliver the messages to at least one of a display, a flow generator service provider, the patient and a physician. By this system, operation of the flow generator is facilitated and enhanced. | 07-16-2015 |
| 20150314097 | RESPIRATORY MASK ASSEMBLY FOR STABILIZING PATIENT INTERFACE - A cushion for use with patient therapy may include a face contacting element having at least one portion including at least a first gel and a skin portion containing the first gel. The skin portion may be silicone based. The face contacting element may be substantially triangular, and at least one of the cheek regions and the lower region of the triangular face contacting element may include a concave section that curves inwardly towards the breathing chamber. The cushion may include first and second gels having one or more properties that are different from one another. | 11-05-2015 |
| 20150314099 | FLEXIBLE STRUCTURE FOR MASK, AND METHOD AND APPARATUS FOR EVALUATING PERFORMANCE OF A MASK IN USE - Headgear for a respiratory mask assembly includes at least one strap. The at least one strap includes one or more bladders filled with a gel. | 11-05-2015 |
| 20150320960 | PAP SYSTEM - A PAP system is adapted for treatment of respiratory disease or sleep disordered breathing and includes a headgear adapted for engaging a patient's head. The PAP system also includes a patient interface adapted to be secured to and sealed against a portion of the patient's face, in use, by the headgear. The PAP system further includes a flow generator adapted to be connected to the patient interface. The flow generator is adapted to be secured by a portion of the headgear to the patient's head. In addition, the flow generator includes a blower adapted to provide pressurised breathable gas to a patient through the patient interface. The blower is at least partially vibrationally isolated from the patient's head by at least one foam layer mounted within the flow generator to secure the blower. The at least one foam layer is adapted to reduce the amount of transmitted vibration received by the patient. The flow generator also includes a mounting structure limiting a compression of the at least one foam layer due to the weight of the blower. The mounting structure includes at least one protrusion extending from an interior surface of the flow generator toward the blower. | 11-12-2015 |
| 20160022935 | CPAP SYSTEMS - A CPAP system includes a flow generator, a patient interface, an air delivery conduit that interconnects the flow generator and the patient interface, and a packaging arrangement including at least one storage facilitating member to allow storage of the air delivery conduit. The at least one storage facilitating member may be provided to the flow generator, a cradle, and/or the air delivery conduit. | 01-28-2016 |
| 20160051788 | CONNECTOR SYSTEM FOR AN APPARATUS THAT DELIVERS BREATHABLE GAS TO A PATIENT - A connector system for use with an apparatus that delivers a supply of pressurized breathable air to a patient includes an air delivery conduit including an auxiliary conduit. The air delivery conduit and auxiliary conduit have a first end and a second end. A connector is provided to at least one of the first and second ends. The connector includes an inner tubular wall and an outer tubular wall surrounding the inner tubular wall and being concentric with the inner tubular wall. The inner and outer tubular walls define first and second passages that are isolated from one another. One of the first and second passages is configured to communicate with the air delivery conduit and the other of the first and second passages is configured to communicate with the auxiliary conduit. | 02-25-2016 |
| 20160067439 | FOREHEAD SUPPORT FOR FACIAL MASK - A pad for a forehead support includes an outer wall having a first side configured to engage a user's forehead and a second side having engaged surfaces configured to rest against engaging surfaces of the forehead support; at least one retaining wall provided between the first side and the second side; and at least one retained portion configured to be retained by a retainer formed on the forehead support, wherein a space is defined between the outer wall and the engaged surfaces. The space has a substantially constant cross sectional profile, and the outer wall, the at least one retaining wall, and the engaged surfaces are formed of a deformable elastomeric material. Deformation of the pad occurs by deflection of at least the outer wall and the at least one retaining wall. | 03-10-2016 |
| 20160074613 | COMPACT ORONASAL PATIENT INTERFACE - A breathing arrangement for use between a patient and a structure to deliver a breathable gas to the patient includes a patient interface including a mouth covering assembly including a cushion structured to sealingly engage around an exterior of a patient's mouth in use, a nozzle assembly including a pair of nozzles structured to sealingly engage within nasal passages of a patient's nose in use without forming a seal on a nasal bridge region of a patient's face, each of the nozzles including a dual wall construction including an inner wall and an outer wall that surrounds the inner wall, and a flexible element connecting the mouth covering assembly and the nozzle assembly. | 03-17-2016 |
| 20160114118 | NASAL ASSEMBLY - A nasal assembly for delivering breathable gas to a patient includes a frame having an integrally formed first connector portion. A nozzle assembly includes a gusset or base portion and a pair of nozzles. At least one inlet conduit is structured to deliver breathable gas into the frame and nozzle assembly for breathing by the patient. A pair of second connector portions are removably and rotatably connected to respective first connector portions of the frame and are in communication with respective inlet conduits, e.g., directly or via angle connectors. A headgear assembly is removably connected to the pair of second connector portions and/or the angle connectors so as to maintain the frame and the nozzle assembly in a desired adjusted position on the patient's face. | 04-28-2016 |
| Patent application number | Description | Published |
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| 20110042729 | METHOD FOR IMPROVING SELECTIVITY OF EPI PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process. | 02-24-2011 |
| 20110073952 | Controlling the Shape of Source/Drain Regions in FinFETs - An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness. | 03-31-2011 |
| 20110210404 | Epitaxy Profile Engineering for FinFETs - A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin. | 09-01-2011 |
| 20130001705 | Epitaxy Profile Engineering for FinFETs - A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin. | 01-03-2013 |
| 20130089959 | Controlling the Shape of Source/Drain Regions in FinFETs - An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness. | 04-11-2013 |
| 20140127886 | Reducing Pattern Loading Effect in Epitaxy - A method includes forming a gate stack over a semiconductor substrate, forming an opening in the semiconductor substrate and adjacent to the gate stack, and performing a first epitaxy to grow a first semiconductor layer in the first opening. An etch-back is performed to reduce a thickness of the first semiconductor layer. A second epitaxy is performed to grow a second semiconductor layer over the first semiconductor layer. The first and the second semiconductor layers have different compositions. | 05-08-2014 |
| 20140197493 | DEFECT REDUCTION FOR FORMATION OF EPITAXIAL LAYER IN SOURCE AND DRAIN REGIONS - The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled etch of a native oxide layer on the surfaces of recesses to reduce creation of particles, and pre-CDE etch to remove particles from surface. The mechanisms also include reduced etch/deposition ratio(s) of initial CDE unit cycle(s) of CDE process to reduce the effect of residual particles on the formation of the epitaxially grown silicon-containing layer. With the application of one or more of the mechanisms, the quality of the epitaxial layer is improved. | 07-17-2014 |
| 20150021688 | MOS Devices with Non-Uniform P-type Impurity Profile - An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A silicon germanium region is disposed in the opening, wherein the silicon germanium region has a first p-type impurity concentration. A silicon cap substantially free from germanium is overlying the silicon germanium region. The silicon cap has a second p-type impurity concentration greater than the first p-type impurity concentration. | 01-22-2015 |
| 20150021696 | MOS Devices Having Epitaxy Regions with Reduced Facets - An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region. The second silicon germanium region comprises a portion in the opening. The second silicon germanium region has a second germanium percentage greater than the first germanium percentage. A silicon cap substantially free from germanium is over the second silicon germanium region. | 01-22-2015 |
| 20150024567 | Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions - The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled etch of a native oxide layer on the surfaces of recesses to reduce creation of particles, and pre-CDE etch to remove particles from surface. The mechanisms also include reduced etch/deposition ratio(s) of initial CDE unit cycle(s) of CDE process to reduce the effect of residual particles on the formation of the epitaxially grown silicon-containing layer. With the application of one or more of the mechanisms, the quality of the epitaxial layer is improved. | 01-22-2015 |
| 20150041852 | Modulating Germanium Percentage in MOS Devices - An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is overlying the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A metal silicide region is over and in contact with the second silicon germanium region. | 02-12-2015 |
| 20150048417 | Germanium Barrier Embedded in MOS Devices - An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A third silicon germanium region is over the second silicon germanium region, wherein the third silicon germanium region has a third germanium percentage lower than the second germanium percentage. | 02-19-2015 |
| 20150061024 | Source and Drain Stressors with Recessed Top Surfaces - An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are on opposite sides of the center portion. | 03-05-2015 |
| 20150137183 | Controlling the Shape of Source/Drain Regions in FinFETs - An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness. | 05-21-2015 |
| 20150228724 | Modulating Germanium Percentage in MOS Devices - An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is overlying the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A metal silicide region is over and in contact with the second silicon germanium region. | 08-13-2015 |
| 20150294865 | SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME - Semiconductor devices and methods for manufacturing the same are disclosed. In an embodiment, a method of manufacturing a semiconductor device may include providing a substrate having a recess; epitaxially forming a first layer including a doped semiconductor material within the recess; and epitaxially forming a second layer including an undoped semiconductor material over at least a portion of the recess. | 10-15-2015 |
| 20150318167 | METHOD OF FORMING AN EPITAXIAL SEMICONDUCTOR LAYER IN A RECESS AND A SEMICONDUCTOR DEVICE HAVING THE SAME - Semiconductor devices and methods of epitaxially forming a semiconductor layer in a recess of a semiconductor device are disclosed. In some embodiments, a method of epitaxially forming a semiconductor layer in a recess may include: providing a chemical vapor deposition system; placing a semiconductor substrate having a recess into the chemical vapor deposition system, wherein the semiconductor substrate includes at least one fissure extending from a surface of the recess into the semiconductor substrate; epitaxially forming a liner including a first semiconductor material within the recess and over the at least one fissure; and epitaxially forming a semiconductor layer including a second semiconductor material over the liner. | 11-05-2015 |
| 20160079362 | METHOD OF FORMING AN EPITAXIAL SEMICONDUCTOR LAYER IN A RECESS AND A SEMICONDUCTOR DEVICE HAVING THE SAME - A method of manufacturing a semiconductor device may include: etching a recess in a semiconductor substrate, where the etching produces a metal residue over a surface of the recess. The recess may thereafter be exposed to a cleaning process that causes the metal residue to etch at least one fissure in the semiconductor substrate. The at least one fissure may extend from the surface of the recess into the semiconductor substrate. The method may further include epitaxially forming a liner comprising a first semiconductor material having a first dopant concentration within the recess and over the at least one fissure. The method proceeds with epitaxially forming a semiconductor layer comprising a second semiconductor material having a second dopant concentration over the liner. | 03-17-2016 |
| 20160087078 | MOS Devices Having Epitaxy Regions with Reduced Facets - An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region. The second silicon germanium region comprises a portion in the opening. The second silicon germanium region has a second germanium percentage greater than the first germanium percentage. A silicon cap substantially free from germanium is over the second silicon germanium region. | 03-24-2016 |
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| 20110079829 | FINFETS AND METHODS FOR FORMING THE SAME - A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is disposed adjacent to the fin-channel body. The at least one S/D region is substantially free from including any fin structure. | 04-07-2011 |
| 20110108894 | METHOD OF FORMING STRAINED STRUCTURES IN SEMICONDUCTOR DEVICES - The present disclosure provides a method of fabricating that includes providing a semiconductor substrate; forming a gate structure on the substrate; performing an implantation process to form a doped region in the substrate; forming spacers on sidewalls of the gate structure; performing an first etching to form a recess in the substrate, where the first etching removes a portion of the doped region; performing a second etching to expand the recess in the substrate, where the second etching includes an etchant and a catalyst that enhances an etching rate at a remaining portion of the doped region; and filling the recess with a semiconductor material. | 05-12-2011 |
| 20110147846 | METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant. | 06-23-2011 |
| 20110193141 | METHOD OF FABRICATING A FINFET DEVICE - A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a substrate of a crystalline semiconductor material having a top surface of a first crystal plane orientation; a fin structure of the crystalline semiconductor material overlying the substrate; a gate structure over a portion of the fin structure; an epitaxy layer over another portion of the fin structure, the epitaxy layer having a surface having a second crystal plane orientation, wherein the epitaxy layer and underlying fin structure include a source and drain region, the source region being separated from the drain region by the gate structure; and a channel defined in the fin structure from the source region to the drain region, and aligned in a direction parallel to both the surface of the epitaxy layer and the top surface of the substrate. | 08-11-2011 |
| 20120018848 | HIGH SURFACE DOPANT CONCENTRATION SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING - The present disclosure provides a high surface dopant concentration semiconductor device and method of fabricating. In an embodiment, a method of forming the semiconductor device includes providing a substrate, forming a doped region in the substrate, forming a stressing layer over the doped region, performing a boron (B) doping implant to the stressing layer, annealing the B doping implant, and after annealing the B doping implant, forming a silicide layer over the stressing layer. | 01-26-2012 |
| 20120181625 | METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES - An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides a processing for forming improved source/drain features in the semiconductor device. Semiconductor devices with the improved source/drain features may prevent or reduce defects and achieve high strain effect resulting from epi layers. In an embodiment, the source/drain features comprises a second portion surrounding a first portion, and a third portion between the second portion and the semiconductor substrate, wherein the second portion has a composition different from the first and third portions. | 07-19-2012 |
| 20120205715 | METHOD OF MANUFACTURING STRAINED SOURCE/DRAIN STRUCTURES - An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides a processing for forming improved lightly doped source/drain features and source/drain features in the semiconductor device. Semiconductor device with the improved lightly doped source/drain features and source/drain features may prevent or reduce defects and achieve high strain effect. In at least one embodiment, the lightly doped source/drain features and source/drain features comprises the same semiconductor material formed by epitaxial growth. | 08-16-2012 |
| 20130071980 | METHOD FOR FABRICATING A FINFET DEVICE - A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes forming a fin structure on a semiconductor substrate and forming a gate structure on the fin structure. A capping layer is then formed over the semiconductor substrate, fin structure, and gate structure. The capping layer is patterned to form an opening exposing a second portion of the fin structure. An epitaxial layer is grown in the opening and on the second portion of the fin structure. At least one of a source region and a drain region is provided in the epitaxial layer. The method may continue to remove the capping layer. | 03-21-2013 |
| 20130119444 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess. | 05-16-2013 |
| 20130146949 | MECHANISMS FOR FORMING STRESSOR REGIONS IN A SEMICONDUCTOR DEVICE - The embodiments of processes and structures described above provide mechanisms for improving mobility of carriers. The dislocations in the source and drain regions and the strain created by the doped epitaxial materials next to the channel region of a transistor both contribute to the strain in the channel region. As a result, the device performance is improved. | 06-13-2013 |
| 20130299876 | Method For Improving Selectivity Of EPI Process - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process. | 11-14-2013 |
| 20140134818 | METHOD FOR FORMING EPITAXIAL FEATURE - The present disclosure provides an integrated circuit device and method for manufacturing the integrated circuit device. The disclosed method provides substantially defect free epitaxial features. An exemplary method includes forming a gate structure over the substrate; forming recesses in the substrate such that the gate structure interposes the recesses; and forming source/drain epitaxial features in the recesses. Forming the source/drain epitaxial features includes performing a selective epitaxial growth process to form an epitaxial layer in the recesses, and performing a selective etch back process to remove a dislocation area from the epitaxial layer. | 05-15-2014 |
| 20140154876 | MECHANISMS FOR FORMING STRESSOR REGIONS IN A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate. The method also includes forming a stress film over the substrate, and performing an annealing process to recrystallize the amorphized region after the stress film is formed. The method further includes forming a recess region on the substrate. The recess region overlies the recrystallized region. The method additionally includes forming an epitaxial stress-inducing material in the recess region. | 06-05-2014 |
| 20140209978 | DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES - A device includes a substrate, a gate structure over the substrate, and source/drain (S/D) features in the substrate and interposed by the gate structure. At least one of the S/D features includes a first semiconductor material, a second semiconductor material over the first semiconductor material, and a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions. | 07-31-2014 |
| 20140308790 | METHODS FOR MANUFACTURING DEVICES WITH SOURCE/DRAIN STRUCTURES - In a method, a gate structure is formed over a substrate, and source/drain (S/D) features are formed in the substrate and interposed by the gate structure. At least one of the S/D features is formed by forming a first semiconductor material including physically discontinuous portions, forming a second semiconductor material over the first semiconductor material, and forming a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from a composition of the first semiconductor material. The third semiconductor material has a composition different from the composition of the second semiconductor material. | 10-16-2014 |
| 20150179796 | Germanium Profile for Channel Strain - The present disclosure relates to a transistor device having a strained source/drain region comprising a strained inducing material having a discontinuous germanium concentration profile. In some embodiments, the transistor device has a gate structure disposed onto a semiconductor substrate. A source/drain region having a strain inducing material is disposed along a side of the gate structure within a source/drain recess in the semiconductor substrate. The strain inducing material has a discontinuous germanium concentration profile along a line extending from a bottom surface of the source/drain recess to a top surface of the source/drain recess. The discontinuous germanium concentration profile provides improved strain boosting and dislocation propagation. | 06-25-2015 |
| 20150236157 | Transistor Strain-Inducing Scheme - A transistor device includes a gate structure disposed over a channel region of a semiconductor substrate. A source/drain recess is arranged in the semiconductor substrate alongside the gate structure. A doped silicon-germanium (SiGe) region is disposed within the source/drain recess and has a doping type which is opposite to that of the channel. An un-doped SiGe region is also disposed within the source/drain recess. The un-doped SiGe region underlies the doped SiGe region and comprises different germanium concentrations at different locations within the source/drain recess. | 08-20-2015 |
| 20150364604 | METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant. | 12-17-2015 |
