Patent application number | Description | Published |
20090027958 | VOLTAGE CONVERTER CIRCUIT AND FLASH MEMORY DEVICE HAVING THE SAME - A voltage conversion circuit includes a reference voltage generation unit for generating a reference voltage having a uniform level regardless of a level of an input voltage varying according to an operation mode; and a driver unit for generating and outputting an active voltage or a standby voltage using the reference voltage output by the reference voltage generation unit according to a control signal. | 01-29-2009 |
20090027968 | NAND FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A NAND flash memory device having memory cells for storing data includes a fuse circuit configured to store option information for operation of the NAND flash memory device as logic codes. A register circuit includes registers for temporarily storing the logic codes stored in the fuse circuit. A test circuit is configured to change the logic code stored in the register circuit and store the changed logic code irrespective of the logic code of the fuse circuit for test operation of the NAND flash memory device. A processor is configured to control operation of the NAND flash memory device. | 01-29-2009 |
20090040826 | FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A flash memory device is disclosed. The flash memory device includes a memory cell array configured to have memory cells for storing data, and store initial data in a part of the memory cells, a page buffer circuit configured to have page buffers for providing data to be programmed in the memory cell or reading data from the memory cell, a controller configured to control the page buffer circuit so that the initial data stored in the memory cell array are read when operation of the flash memory device is started, discriminate error of the read initial data, and amend the error of the initial data, and an initial data latching circuit for latching the initial data of which the error is amended by the controller. | 02-12-2009 |
20090040830 | BLOCK DECODER AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A semiconductor memory device can improve electrical properties by prohibiting a leakage current, which flows through a memory cell, in such a way as to turn off a drain select transistor, a source select transistor and a side transistor of an unselected memory cell block when the semiconductor memory device operates. The semiconductor memory device includes a memory cell block in which a plurality of memory cells, drain and source select transistors, and side word line transistors are connected in a string structure, a block decoder for outputting a block select signal in response to predecoded address signals and controlling the drain and source select transistors and the side word line transistors, and a block switch for connecting a global word line to word lines of the memory cell block in response to the block select signal. | 02-12-2009 |
20090097325 | PROGRAMMING METHOD OF A NON-VOLATILE MEMORY DEVICE - In a programming method of a non-volatile memory device, a program operation is performed by applying a program voltage to a selected word line and a first pass voltage to unselected word lines. The first pass voltage shifts to a second pass voltage having a level lower than that of the first pass voltage. A verify operation is performed by applying a verify voltage to the selected word line. The verify voltage has a level lower than that of the second pass voltage. | 04-16-2009 |
20090108916 | PUMP CIRCUIT - A pump circuit includes a plurality of transfer elements, capacitors, and controllers. The transfer elements are connected in series between a power supply terminal and an output terminal. The capacitors charge two terminals of each of the transfer elements according to first and second clock signals, respectively. Each of the controllers includes first and second switch elements, which are operated in opposite manners in response to the first or second clock signal to control each of the transfer elements. | 04-30-2009 |
20090141551 | METHOD FOR PERFORMING ERASING OPERATION IN NONVOLATILE MEMORY DEVICE - A method for performing erasing operation in a nonvolatile memory device includes the steps of applying an erasing voltage to P-wells of a selected memory cell block which is composed of a plurality of strings in each of which a plurality of memory cells and side memory cells are connected in series; performing soft programming operation by applying a soft programming voltage to word lines of the selected memory cell block; and programming the side memory cells by applying a programming voltage to the side memory cells. | 06-04-2009 |
20090231919 | SEMICONDUCTOR MEMORY DEVICE AND ERASE METHOD IN THE SAME - A semiconductor memory device and an erase method in the same are disclosed. The semiconductor memory device includes a memory cell array configured to have a cell string in which memory cells are coupled, a block switch configured to switch a global word line and a word line of the memory cell array, a block decoder configured to control the block switch, and a recycle switch configured to use an erase voltage charged in a P-well of the memory cell array as a supply voltage of the block decoder. | 09-17-2009 |
20100177565 | METHOD OF OPERATING A FLASH MEMORY DEVICE - A flash memory device is disclosed. The flash memory device includes a memory cell array configured to have memory cells for storing data, and store initial data in a part of the memory cells, a page buffer circuit configured to have page buffers for providing data to be programmed in the memory cell or reading data from the memory cell, a controller configured to control the page buffer circuit so that the initial data stored in the memory cell array are read when operation of the flash memory device is started, discriminate error of the read initial data, and amend the error of the initial data, and an initial data latching circuit for latching the initial data of which the error is amended by the controller. | 07-15-2010 |
20100322004 | SEMICONDUCTOR MEMORY DEVICE AND ERASE METHOD IN THE SAME - A semiconductor memory device and an erase method in the same are disclosed. The semiconductor memory device includes a memory cell array configured to have a cell string in which memory cells are coupled, a block switch configured to switch a global word line and a word line of the memory cell array, a block decoder configured to control the block switch, and a recycle switch configured to use an erase voltage charged in a P-well of the memory cell array as a supply voltage of the block decoder. | 12-23-2010 |