Patent application number | Description | Published |
20120018871 | STACK PACKAGE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A stack package usable in a three-dimensional (3D) system-in-package (SIP) includes a first semiconductor chip, a second semiconductor chip, and a supporter. The first semiconductor chip includes a through silicon via (TSV), and the second semiconductor chip is stacked on the first semiconductor chip and is electrically connected to the first semiconductor chip through the TSV of the first semiconductor chip. The supporter is attached onto the first semiconductor chip so as to be spaced apart from an edge of the second semiconductor chip. | 01-26-2012 |
20120153498 | Semiconductor Device and Method of Forming the Same - In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented. | 06-21-2012 |
20120168792 | HETEROJUNCTION STRUCTURES OF DIFFERENT SUBSTRATES JOINED AND METHODS OF FABRICATING THE SAME - In one embodiment, a heterojunction structure includes a first substrate; a second substrate comprising an electrode pad, the second substrate joined to the first substrate by an adhesive layer interposed between the first and second substrates, the first substrate and the adhesive layer having a via hole penetrating therethrough to expose a region of the electrode pad; a connection electrode disposed in the via hole and contacting the electrode pad; and an insulation layer electrically insulating the connection electrode from the first substrate. One of the first and second substrates has a thermal expansion coefficient different than a thermal expansion coefficient of the other of the first and second substrates, and at least one of the adhesive layer or the insulation layer comprises an organic material. | 07-05-2012 |
20120171814 | SEMICONDUCTOR PACKAGES AND METHODS OF FABRICATING THE SAME - Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer. | 07-05-2012 |
20120223433 | SEMICONDUCTOR PACKAGE INCLUDING CONNECTING MEMBER HAVING CONTROLLED CONTENT RATIO OF GOLD - A semiconductor package including connecting members having a controlled content ratio of gold capable of increasing durability and reliability by preventing an intermetallic compound having high brittleness from being formed. The semiconductor package includes a base substrate; a first semiconductor chip disposed on the base substrate; and a first connecting member for electrically connecting the base substrate and the first semiconductor chip, and comprising a first bonding portion that includes gold and has a first content ratio of gold that is controlled to prevent an intermetallic compound of AuSn | 09-06-2012 |
20120228780 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor device including a through via plug and a method of manufacturing the same. In the semiconductor device, since a redistributed interconnection pattern is disposed on a protection film of a convex-concave structure having a protrusion and a recessed portion, the semiconductor device may have improved reliability while preventing a leakage current. In the method of manufacturing the semiconductor device, since an end surface of through via structure is exposed by removing a protection film and an insulating film liner using a selective etching process, damage to the through via structure is minimized, thereby preventing copper contamination in a substrate. | 09-13-2012 |
20120235305 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate. | 09-20-2012 |
20120280405 | SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACURING THE SAME - Provided are semiconductor devices and methods of manufacturing the same. The semiconductor package includes a substrate, a first semiconductor chip mounted on the circuit substrate and having a first width, a second semiconductor chip overlying the first semiconductor chip and having a second width greater than the first width, and a first under filler disposed between the first and second semiconductor chips, covering a side surface of the first semiconductor chip and having an inclined side surface. | 11-08-2012 |
20120329249 | METHODS OF PROCESSING SUBSTRATES - Methods of manufacturing a plurality of semiconductor chips are provided. The method may include providing a middle layer between a substrate and a carrier to combine the carrier with the substrate, thinning the substrate; after thinning the substrate, separating the carrier from the substrate; and after the carrier is separated from the substrate, cutting the substrate to form the plurality of semiconductor chips, wherein the middle layer is adhered to the carrier with a first bonding force, and the middle layer is adhered to the substrate with a second bonding force, and wherein the second bonding force is greater than the first bonding force. | 12-27-2012 |
20130032947 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor package that stably protects an internal semiconductor chip from external shocks, and a method of manufacturing the semiconductor package is disclosed. The semiconductor package includes a first semiconductor chip including a first body layer having a first surface, a second surface, and a lateral surface between the first surface and the second surface, and a first protective layer that exposes an edge portion of the first surface and forms a step difference with the first surface; an encapsulation structure that covers a lateral surface of the first body layer and the edge portion of the first surface so as to encapsulate the first semiconductor chip to have a locking structure; and a first conductive terminal formed on the first body layer through the protective layer. | 02-07-2013 |
20130149817 | FABRICATING METHODS OF SEMICONDUCTOR DEVICES AND PICK-UP APPARATUSES OF SEMICONDUCTOR DEVICES THEREIN - A fabricating method of a semiconductor device may include forming a semiconductor die on a supporting wafer, and picking up the die from the wafer by attaching to the die a transfer unit, the transfer unit including a head unit configured to enable twisting movement, and performing the twisting movement. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer; and picking up the first semiconductor device from the wafer, moving the first semiconductor device onto a second semiconductor device, and bonding the first semiconductor device to the second semiconductor device while maintaining the first semiconductor device oriented so that a surface faces upwardly. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer, attaching to the first semiconductor device a transfer unit configured to enable twisting movement, and performing the twisting movement. | 06-13-2013 |
20130193588 | SEMICONDUCTOR PACKAGE - A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer. | 08-01-2013 |
20130260551 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented. | 10-03-2013 |
20130299969 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE - A semiconductor package includes a first semiconductor chip, a second semiconductor chip and a sealing member. The first semiconductor chip includes a substrate having a first surface and a second surface opposite to the first surface and having an opening that extends in a predetermined depth from the second surface, and a plurality of through electrodes extending in a thickness direction from the first surface, end portions of the through electrodes being exposed through a bottom surface of the opening. The second semiconductor chip is received in the opening and mounted on the bottom surface of the opening. The sealing member covers the second semiconductor chip in the opening. | 11-14-2013 |
20140148007 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate. | 05-29-2014 |
20140210075 | METHODS FOR PROCESSING SUBSTRATES - A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer. | 07-31-2014 |
20140213039 | METHODS OF PROCESSING SUBSTRATES - Methods processing substrates are provided. The method may include providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting glue layer and thermosetting release layers provided on opposing sides of the thermosetting glue layer. | 07-31-2014 |
20140300004 | SEMICONDUCTOR PACKAGES AND METHODS OF FABRICATING THE SAME - Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer. | 10-09-2014 |