Patent application number | Description | Published |
20090250169 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 10-08-2009 |
20100065213 | ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER - A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing. | 03-18-2010 |
20110217585 | INTEGRATED COMPOSITE SEPARATOR FOR LITHIUM-ION BATTERIES - Embodiments of the present invention relate generally to lithium-ion batteries, and more specifically, to batteries having integrated separators and methods of fabricating such batteries. In one embodiment, a lithium-ion battery having an electrode structure is provided. The lithium-ion battery comprises an anode stack, a cathode stack, and an integrated separator formed between the anode stack and the cathode stack. The anode stack comprises an anodic current collector and an anode structure formed over a first surface of the anodic current collector. The cathode stack comprises a cathodic current collector and a cathode structure formed over a first surface of the cathodic current collector. The integrated separator comprises a first ceramic layer, a second ceramic layer, and a polymer material layer deposited between the first ceramic layer and the second ceramic layer. | 09-08-2011 |
20110284166 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 11-24-2011 |
20120037068 | COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY - Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate. | 02-16-2012 |
20120064225 | SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM - In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exposed to a dual sided spray deposition process, wherein each of the one or more processing regions are further divided into a first spray deposition region and a second spray deposition region for simultaneously spraying an anodically active or cathodically active material onto opposing sides of a portion of the flexible conductive substrate, wherein each of the first and second spray deposition regions comprise a spray dispenser cartridge for delivering the activated material toward the flexible conductive substrate and a movable collection shutter. | 03-15-2012 |
20120145326 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 06-14-2012 |
20120219841 | LITHIUM ION CELL DESIGN APPARATUS AND METHOD - A spray module for depositing an electro-active material over a flexible conductive substrate is provided. The spray module comprises a first heated roller for heating and transferring the flexible conductive substrate, a second heated roller for heating and transferring the flexible conductive substrate, a first spray dispenser positioned adjacent to the first heated roller for depositing electro-active material onto the flexible conductive substrate as the flexible conductive substrate is heated by the first heated roller, and a second spray dispenser positioned adjacent to the second heated roller for depositing electro-active material over the flexible conductive substrate as the flexible conductive substrate is heated by the second heated roller. | 08-30-2012 |
20120325406 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 12-27-2012 |
Patent application number | Description | Published |
20090250335 | Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields - A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution. | 10-08-2009 |
20090250432 | Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields - A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents. | 10-08-2009 |
20110006038 | PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY - A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate. | 01-13-2011 |