Kushibiki
Junichi Kushibiki, Miyagi JP
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20120289393 | Method for Producing Ulta-Low-Expansion Glass | 11-15-2012 |
20130103342 | Method of Measuring Fictive Temperature of Optical Glass - A heat treatment is performed at different temperatures for a plurality of calibration-line forming optical glass samples that can be considered as having the same composition as optical glass to be measured, any one of the longitudinal wave velocity, the LSAW velocity and the shear wave velocity of the samples is measured as an acoustic property AP | 04-25-2013 |
Nobuo Kushibiki, Chiba JP
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20110011447 | Method of Forming A Ceramic Silicon Oxide Type Coating, Method of Producing An Inorganic Base Material, Agent For Forming A Ceramic Silicon Oxide Type Coating, and Semiconductor Device - A method of forming a ceramic silicon oxide type coating and a method of producing an inorganic base material having this coating, by coating an organohydrogensiloxane/hydrogensiloxane copolymer on the surface of an inorganic base material and converting the coating into a ceramic silicon oxide type coating by heating to high temperatures in an inert gas or an oxygen-containing inert gas (oxygen gas less than 20 volume %). A coating-forming agent comprising an organohydrogensiloxane/hydrogensiloxane copolymer or its solution. A semiconductor device comprising at least a semiconductor layer formed on a silicon oxide type coating on an inorganic substrate. | 01-20-2011 |
Nobuo Kushibiki, Fujisaws-Shi JP
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20100188766 | Cyclic Dihydrogenpolysiloxanes, Hydrogenpolysiloxanes, Processes For Their Production, Silica Type Glass Moldings And A Process For Their Production, Optical Elements And A Process For Their Production - Cyclic dihydrogenpolysiloxanes, hydrogenpolysiloxanes of specific siloxane unit formulas etc., a process for their production using hydrolysis/condensation, a process for the production of silica type glass moldings with an optical transmittance of 90% to 100% in the vacuum-UV region to UV region and an optical transmittance of 98% to 100% in the visible region to near infrared region by curing said cyclic dihydrogensiloxanes or said hydrogenpolysiloxanes in a mold, said silica type glass moldings, optical elements made up of the silica type glass, a process for the production of optical elements having such a silica type glass film layer by coating an optical element with the hydrogenpolysiloxanes and curing them, and optical elements having such a silica type glass film layer. | 07-29-2010 |
Nobuo Kushibiki, Kanagawa JP
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20080318067 | Free Films Made Of Cured Organopolysiloxane Resins, Process For Production Thereof, And Laminated Films - A free-standing film comprising a cured organopolysiloxane resin obtained by conducting a cross-linking reaction between (A) an organopolysiloxane resin represented by the following average siloxane unit formula: [R | 12-25-2008 |
20110177342 | Cured Organopolysiloxane Resin Film Having Gas Barrier Properties and Method Of Producing The Same - A cured organopolysiloxane resin film having gas barrier properties in which a layer of cured organopolysiloxane that contains an organic functional group, an organic group produced by the polymerization of polymerizable organic functional groups, or the hydrosilyl group or silanol group, is formed on a visible region-transparent film comprising cured organopolysiloxane resin yielded by hydrosilylation reaction-mediated crosslinking, and in which a silicon oxynitride layer, silicon nitride layer, or silicon oxide layer is formed on the aforementioned layer of cured organopolysiloxane. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties. | 07-21-2011 |
Ryousuke Kushibiki, Tsukuba-Shi JP
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20140021043 | FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - An FePt—C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target. | 01-23-2014 |
20140301887 | FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - An FePt—C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target. | 10-09-2014 |
20140318954 | FEPT-BASED SPUTTERING TARGET - An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target. | 10-30-2014 |
20140318955 | FEPT-BASED SPUTTERING TARGET - An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target. | 10-30-2014 |
20140322062 | PROCESS FOR PRODUCING FEPT-BASED SPUTTERING TARGET - A process for producing an FePt-based sputtering target includes adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy: | 10-30-2014 |
20140322063 | PROCESS FOR PRODUCING FEPT-BASED SPUTTERING TARGET - A process for producing an FePt-based sputtering target includes adding metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and less than 60 at % and one or more kinds of metal elements other than Fe and Pt in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with a total amount of Pt and the one or more kinds of metal elements being 60 at % or less so that the metal oxide powder accounts for 20 vol % or more and 40 vol % or less of a total amount of the FePt-based alloy powder and the metal oxide powder, followed by mixing the FePt-based alloy powder and the metal oxide powder to produce a powder mixture. | 10-30-2014 |
Shunsuke Kushibiki, Hiratsuka-Shi JP
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20140150463 | THERMOELECTRIC MODULE - A thermoelectric module includes a thermoelectric element and an electrode. The thermoelectric element has a rectangular end face. The electrode includes a first joint portion joined to a center portion of the end face; and a second joint portion joined to one end and a third joint portion joined to the other end. Each of the second joint portion and the third joint portion is disposed at a distance from each of four corners of the end face. A joint length in the second direction orthogonal to the first direction between the first joint portion and the end face is longer than each of a joint length in the second direction between the second joint portion and the end face, and a joint length in the second direction between the third joint portion and the end face. | 06-05-2014 |