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| 20130236759 | BATTERY HOLDER - A battery holder is equipped with a support unit having a battery holding hole, and a holder unit interposed between the battery holding hole and the battery. The holder unit has a first spacer and a second spacer. The first spacer has a support part that supports the battery in the support unit. The second spacer is formed using a material with a lower melting point than the melting point of the material of the first spacer, this is inserted in the heat shielding space, and when the second spacer is melted by heat and flows out from the heat shielding space, the constitution is such that the heat shielding space shifts the heat insulation space. | 09-12-2013 |
| 20140283360 | BATTERY HOLDER AND MANUFACTURING METHOD OF BATTERY HOLDER - A battery holder holds a plurality of batteries by a simple structure. A battery holder | 09-25-2014 |
| 20140287288 | BATTERY DEVICE - A battery holder includes restriction members protruded from a holding base plate in an axial direction of batteries to be located in spaces between the batteries. Each of the restriction members has: a tapered surface which is inclined to the axial direction and is in line contact with an outer periphery of the end face of the battery when the restriction member is inserted into the space, so as to apply a force to move the battery in a radial direction of the battery; and a support surface which supports a side face of the battery that is not in contact with the tapered surface, by surface contact. The support surface is configured to receive a moving force in the radial direction from the tapered surface and support the side face of the battery by a reactive force. | 09-25-2014 |
| 20140295240 | BATTERY DEVICE - A battery device includes a bus bar having a coupling bus bars, a positive electrode bus bar and a negative electrode bus bar. The coupling bus bar includes: a positive electrode connection member arranged to sequentially connect positive electrode terminals of the respective batteries included in one battery array group; and a negative electrode connection member arranged to sequentially connect negative electrode surfaces of the respective batteries included in another battery array group. The positive electrode connection member is electrically connected with the negative electrode connection member. The positive electrode bus bar is arranged to sequentially connect specific positive electrode terminals in a specific battery array group, which are not connected by the coupling bus bar. The negative electrode bus bar is arranged to sequentially connect specific negative electrode terminals in a specific battery array group, which are not connected by the coupling bus bar. | 10-02-2014 |
| 20140356689 | BATTERY MODULE AND BATTERY UNIT - An object of the invention is to provide an easy sealing technique of a battery element. A battery module has a battery element placed in the frame shape of an insulating middle frame body. This battery element is covered across the middle frame body by a positive electrode-side plate and a negative electrode-side plate to be contained. In the battery module, an insulating outer peripheral frame body is provided to cover outer peripheral plate sections of the positive electrode-side plate and the negative electrode-side plate along a circumference in a frame shape to include circumferential end faces of the positive and negative electrode-side plates and a circumferential end face of the middle frame body. | 12-04-2014 |
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| 20140045038 | ASSEMBLED BATTERY AND VEHICLE - An assembled battery including a plurality of cells of cylindrical shape arranged in a plane including a diameter direction, each of the cells including a groove portion extending in a circumferential direction, and a fixing plate including an engagement portion engaging with each of the groove portions of the cells to fix the plurality of cells. A bus bar electrically connecting terminal electrodes of adjacent two of the cells may be fixed to the fixing plate. | 02-13-2014 |
| 20140154530 | BATTERY PACK AND VEHICLE PROVIDED WITH SAME - A battery pack includes a single cell having a cylindrical shape, the single cell having a positive electrode at one end of the single cell and a negative electrode at the other end of the single cell, a plurality of the single cells being arranged in a radial direction of the single cell; a fuse; a first bus bar connected via the fuse to one electrode, from among the positive electrode and the negative electrode; a second bus bar directly connected to the other electrode, from among the positive electrode and the negative electrode; and a retaining member configured to retain the plurality of single cells from the radial direction of the single cell, in a manner such that when the fuse is disconnected, retaining force with which the single cell is retained by the retaining member decreases and the single cell moves in a direction away from the fuse. | 06-05-2014 |
| 20140154541 | ASSEMBLED BATTERY - An assembled battery including a plurality of single batteries, a fin shaped portion and a sheet member is provided. The fin shaped portion is disposed outside of the plurality of the single batteries. A gas exhaustion path is defined between the fin shaped portion and the plurality of a plurality of the single batteries. A gas discharged from the single batteries from the assembled battery is discharged from the assembled battery to an outside of the assembled battery through the gas exhaustion path in a battery abnormal condition. The sheet member is disposed between the gas exhaustion path and the plurality of the single batteries, and is an insulating member. | 06-05-2014 |
| 20150068826 | VEHICLE - A vehicle having a battery mounted thereon is provided. The battery includes a cell group having a plurality of cells, each of the cells including an electrolytic solution and a power-generating element within a case of cylindrical shape, and a holding member holding each of the cells in a diameter direction of the cell, wherein the cell group is placed in an area inside an edge of the holding member when viewed from a height direction of the vehicle. Each of the cells can be arranged to extend in the height direction of the vehicle. The holding member may be a heat dissipation plate allowing heat exchange between the cells. | 03-12-2015 |
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| 20090072355 | DUAL SHALLOW TRENCH ISOLATION STRUCTURE - A protective dielectric layer is formed on a first shallow trench having straight sidewalls, while exposing a second shallow trench. An oxidation barrier layer is formed on the semiconductor substrate. A resist is applied and recessed within the second shallow trench. The oxidation barrier layer is removed above the recessed resist. The resist is removed and thermal oxidation is performed so that a thermal oxide collar is formed above the remaining oxidation mask layer. The oxidation barrier layer is thereafter removed and exposed semiconductor area therebelow depth is etched to form a bottle shaped shallow trench. The first and the bottle shaped trenches are filled with a dielectric material to form a straight sidewall shallow trench isolation structure and a bottle shallow trench isolation structure, respectively. Both shallow trench isolation structures may be employed to provide optimal electrical isolation and device performance to semiconductor devices having different depths. | 03-19-2009 |
| 20090104776 | METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES - A method for forming lines for semiconductor devices including, depositing a shallow trench isolation (STI) film stack on a silicon substrate, depositing a layer of polysilicon on the STI film stack, depositing a layer of antireflective coating on the layer of polysilicon, developing a phototoresist on the antireflective coating, wherein the photoresist defines a line, etching the layer of antireflective coating and the layer of polysilicon using RIE with a low bias power, removing the photoresist, removing the layer of antireflective coating, etching the STI film stack to form the line, wherein the layer of polysilicon further defines the line. | 04-23-2009 |
| 20110042731 | STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR IMPLANTED PLATE EDRAM - A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures. | 02-24-2011 |
| 20120083092 | STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR IMPLANTED PLATE EDRAM - A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures. | 04-05-2012 |
| 20120175694 | STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR IMPLANTED PLATE EDRAM - A memory device is provided including a semiconductor on insulator (SOI) substrate including a first semiconductor layer atop a buried dielectric layer, wherein the buried dielectric layer is overlying a second semiconductor layer. A capacitor is present in a trench, wherein the trench extends from an upper surface of the first semiconductor layer through the buried dielectric layer and extends into the second semiconductor layer. A protective oxide is present in a void that lies adjacent the first semiconductor layer, and a pass transistor is present atop the semiconductor on insulator substrate in electrical communication with the capacitor. | 07-12-2012 |
| 20130093043 | ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE - An array or moat isolation structure for eDRAM and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region. | 04-18-2013 |
| 20130099354 | CAPACITOR WITH DEEP TRENCH ION IMPLANTATION - An improved semiconductor capacitor and method of fabrication is disclosed. Embodiments utilize a deep trench which is then processed by performing a pre-amorphous implant on the trench interior to transform the interior surface of the trench to amorphous silicon which eliminates the depletion region that can degrade capacitor performance. | 04-25-2013 |
| 20140124952 | ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE - An array or moat isolation structure for eDRAM with heterogeneous deep trench fill and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method further includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method further includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method further includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method further includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region. | 05-08-2014 |
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| 20090123195 | DEVELOPING ROLLER, DEVELOPING APPARATUS USING THE SAME, AND IMAGE FORMING APPARATUS - A developing roller having an elastic layer on the outer periphery of a mandrel and having a surface layer containing a resin and resin particles on its outer periphery, wherein the surface layer has a convex portion attributable to the resin particles, and has a surface of roughness in which a distortion degree Rsk of a roughness curve is 0.15 or more and 0.70 or less, wherein the resin particles have a peak P1 at a particle diameter dl in a volume particle size distribution, and wherein “a”, “b”, “c”, d1, d2 and d3 satisfy a specific relationship, where, “a” denotes a volume fraction of the resin particle having the particle diameter dl in the volume particle size distribution, and “b” and “c” denote volume fractions at particle diameters d2 and d3 respectively in the volume particle size distribution. | 05-14-2009 |
| 20120091608 | PROCESS FOR PRODUCING REGENERATED ELASTIC ROLLER - There is provided a process for producing a regenerated elastic roller which can be again used for the formation of high-quality electrophotographic images by sufficiently relaxing a compression set of the elastic roller having the compression set caused in an elastic layer in usage. The process for producing a regenerated elastic roller includes a step of heating an elastic roller having a conductive mandrel and an elastic layer and having a compression set caused in the elastic layer, in a cylindrical mold to thermally expand the elastic layer and to cause a surface of the elastic roller to contact an inner wall of the cylindrical mold. | 04-19-2012 |
| 20120195631 | DEVELOPING ROLLER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A developing roller used for formation of an electrophotographic image with high quality is provided in which even in storage and use under a high temperature and high humidity environment, peel-off of a surface layer from an elastic layer is suppressed, and a toner hardly adheres to the surface of the developing roller. | 08-02-2012 |
| 20130164038 | DEVELOPING MEMBER AND PRODUCTION METHOD THEREFOR, AND ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS - Provided is a developing member capable of suppressing occurrence of compression set. The developing member comprises a substrate; an elastic layer provided on the substrate; and a coating layer provided on the elastic layer, wherein the elastic layer contains a cured substance of a mixture containing the following (A) to (D): (A) organopolysiloxane having two or more vinyl groups bonded to a silicon atom in one molecule and having a viscosity at 25° C. of 10 Pa·s or more and 100 Pa·s or less; (B) organopolysiloxane including constituent units of SiO | 06-27-2013 |
| 20130223892 | DEVELOPING MEMBER - Provided is a developing roller including elastic layer and resin layer adhered to each other and having an appropriately resistance, thereby suppressing fogging. The developing member comprises a mandrel; an elastic layer; and a resin layer, wherein: the resin layer comprises polyurethane resin obtained by isocyanate and polyol; and the elastic layer includes cured silicone rubber composition comprising (a)-(d):
| 08-29-2013 |
| 20130266339 | ELECTRO-CONDUCTIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided is an electro-conductive member showing small unevenness of the residual state of charge. The electro-conductive member is an electro-conductive member, comprising: a substrate whose surface is electro-conductive; and an electro-conductive elastic layer provided on the substrate, wherein the elastic layer is obtained by curing a mixture containing the following (A) to (D): (A) an organopolysiloxane having at least two vinyl groups bonded to a silicon atom; (B) an organopolysiloxane represented by the following chemical structural formula (1); (C) a hydrogen polysiloxane having at least two hydrosilyl groups; and (D) carbon black (l, m, and n in the chemical structural formula (1) each independently represent a positive integer). | 10-10-2013 |
| 20140072350 | DEVELOPING MEMBERINCLUDING ELASTIC MEMBER CONTAINING CURED PRODUCT OF ADDITION -CURING SILICONE RUBBER MIXTURE. PROCESSING CARTRIDGE INCLUDING THE DEVELOPING MEMBER, AND ELECTROPHOTOGRAPHIC APPARATUS INCLUDING THE DEVELOPING MEMBER - A developing roller includes: a mandrel; an elastic layer provided for an outer periphery of the mandrel, the elastic layer including an addition-curing silicone rubber; and a surface layer provided for an outer periphery of the elastic layer, in which: the elastic layer includes a compound represented by the following formula (1); when the content of such a compound that n in the formula (1) represents an integer of 3 to 12 in the elastic layer is represented by P1, and the content of such a compound that n in the formula (1) represents an integer of 13 to 20 in the elastic layer is represented by P2, P1+P2 is 5,000 ppm by mass to 12,000 ppm by mass; and P1 is 1,500 ppm by mass to 6,000 ppm by mass (In the formula (1), n represents an integer of 3 to 20): | 03-13-2014 |
