Patent application number | Description | Published |
20100232434 | PROGRAMMABLE HASH-TUPLE GENERATION WITH PARALLEL RULE IMPLEMENTATION INDEPENDENCE - Techniques have been developed to facilitate concurrent evaluation of hash rule entries in ways that allow an implementation to maintain a deterministic resultant hash irrespective of variations in the allocation of particular rules to particular storage banks or evaluation logic, such as may occur with rule set revisions. Similarly, uniform deterministic hash results can be assured even across a range of implementations that support greater or lesser levels of concurrent rule evaluations. | 09-16-2010 |
20100254391 | TECHNIQUE FOR GENERATING HASH-TUPLE INDEPENDENT OF PRECEDENCE ORDER OF APPLIED RULES - Techniques have been developed to facilitate evaluation of match and hash rule entries in ways that allow an implementation to decouple (i) the order in which match rules are applied to a first subset of packet header fields from (ii) the ordering of a second subset of packet header fields over which a non-commutative hash is computed. In short, the set and ordering of fields evaluated in accordance with a precedence order of rules need not correspond to the set or ordering of fields over which a hash is computed in a communications controller. | 10-07-2010 |
20110107065 | INTERCONNECT CONTROLLER FOR A DATA PROCESSING DEVICE AND METHOD THEREFOR - A data processing device includes an interconnect controller operable to manage the communication of information between modules of the data processing device via an interconnect. In response to a transaction request the interconnect controller selects a tag value from a set of available tag values, assigns the tag to the transaction and reserves the tag value so that it is unavailable for assignment to other transactions. If an expected response to the transaction request is not received within a designated amount of time, the transaction enters a timed-out state and the interconnect controller locks the tag value, so that it remains unavailable for assignment to other transactions until an unlock event, such as a request from software. | 05-05-2011 |
20110238934 | ASYNCHRONOUSLY SCHEDULING MEMORY ACCESS REQUESTS - A data processing system employs a scheduler to schedule pending memory access requests and a memory controller to service scheduled pending memory access requests. The memory access requests are asynchronously scheduled with respect to the clocking of the memory. The scheduler is operated using a clock signal with a frequency different from the frequency of the clock signal used to operate the memory controller. The clock signal used to clock the scheduler can have a lower frequency than the clock used by a memory controller. As a result, the scheduler is able to consider a greater number of pending memory access requests when selecting the next pending memory access request to be submitted to the memory for servicing and thus the resulting sequence of selected memory access requests is more likely to be optimized for memory access throughput. | 09-29-2011 |
20110238941 | SCHEDULING MEMORY ACCESS REQUESTS USING PREDICTED MEMORY TIMING AND STATE INFORMATION - A data processing system employs an improved arbitration process in selecting pending memory access requests received from the one or more processor cores for servicing by the memory. The arbitration process uses memory timing and state information pertaining both to memory access requests already submitted to the memory for servicing and to the pending memory access requests which have not yet been selected for servicing by the memory. The memory timing and state information may be predicted memory timing and state information; that is, the component of the data processing system that implements the improved scheduling algorithm may not be able to determine the exact point in time at which a memory controller initiates a memory access for a corresponding memory access request and thus the component maintains information that estimates or otherwise predicts the particular state of the memory at any given time. | 09-29-2011 |
20120290808 | SYSTEM AND METHOD FOR SCALABLE MOVEMENT AND REPLICATION OF DATA - A method of multicast data transfer including accessing a source address to a source location of mapped memory which stores source data, accessing multiple destination addresses to corresponding destination locations of the mapped memory, and for each of at least one section of the source data, reading the section using the source address, storing the section into a local memory of a data transfer device, and writing the section from the local memory to each destination location in the mapped memory using the destination addresses. Separate source and destination attributes may be provided, so that the source and each destination may have different attributes for reading and storing data. The source and each destination may have any number of data buffers accessible by corresponding links provided in data structures supporting the data transfer. The source data may be divided into sections and handled section by section. | 11-15-2012 |
20120331187 | BANDWIDTH CONTROL FOR A DIRECT MEMORY ACCESS UNIT WITHIN A DATA PROCESSING SYSTEM - A method for controlling bandwidth in a direct memory access (DMA) unit of a computer processing system, the method comprising: assigning a DMA job to a selected DMA engine; starting a source timer; and issuing a request to read a next section of data for the DMA job. If a sufficient amount of the data was not obtained, allowing the DMA engine to wait until the source timer reaches a specified value before continuing to read additional data for the DMA job. | 12-27-2012 |
20130138841 | MESSAGE PASSING USING DIRECT MEMORY ACCESS UNIT IN A DATA PROCESSING SYSTEM - A method includes generating, by a first software process of the data processing system, a source partition descriptor for a DMA job which requires access to a first partition of a memory which is assigned to a second software process of the data processing system and not assigned to the first software process. The source partition descriptor comprises a partition identifier which identifies the first partition of the memory. The DMA unit receives the source partition descriptor and generates a destination partition descriptor for the DMA job. Generating the destination partition descriptor includes translating, by the DMA unit, the partition identifier to a buffer pool identifier which identifies a physical address within the first partition of the memory which is assigned to the second software process; and storing, by the DMA unit, the buffer pool identifier in the destination partition descriptor. | 05-30-2013 |
20130275989 | CONTROLLER FOR MANAGING A RESET OF A SUBSET OF THREADS IN A MULTI-THREAD SYSTEM - An integrated circuit device includes a processor core, and a controller. The processor core issues a command intended for a first thread of a plurality of threads. The controller initiates de-allocates hardware resources of the controller that are allocated to the first thread during a thread reset process for the first thread, returns a specified value to the processor core in response to the first command intended for the first thread during the thread reset process, drops responses intended for the first thread from other devices during the thread reset process, completes the thread reset process in response to a determination that all expected responses intended for the first thread have been either received or dropped, and continues to issue requests to other devices in response to commands from other threads of the plurality of threads and processing corresponding responses during the thread reset process. | 10-17-2013 |
20130282933 | DIRECT MEMORY ACCESS BUFFER UTILIZATION - A DMA controller allocates space at a buffer to different DMA engines based on the length of time data segments have been stored at a buffer. This allocation ensures that DMA engines associated with a destination that is experiencing higher congestion will be assigned less buffer space than a destination that is experiencing lower congestion. Further, the DMA controller is able to adapt to changing congestion conditions at the transfer destinations. | 10-24-2013 |
20140122735 | SYSTEM AND METHOD FOR ASSIGNING A MESSAGE - A processor of a plurality of processors includes a processor core and a message manager. The message manager is in communication with the processor core. The message manager to receive a message from a second processor of the plurality of processors, to identify a classification rule for the message based on bits in a header of the message, and to create a queue identifier for the message using bits of a payload of the message, wherein the queue identifier is associated with a queue of the processor core. | 05-01-2014 |
20140219276 | SYSTEM AND METHOD FOR MAINTAINING PACKET ORDER IN AN ORDERED DATA STREAM - A source processor can divide each packet of a data stream into multiple segments prior to communication of the packet, allowing a packet to be transmitted in smaller chunks. The source processor can process the segments for two or more packets for a given data stream concurrently, and provide appropriate context information in each segments header to facilitate in order transmission and reception of the packets represented by the individual segments. Similarly, a destination processor can receive the packet segments packets for an ordered data stream from a source processor, and can assign different contexts, based upon the context information in each segments header. When a last segment is received for a particular packet, the context for the particular packet is closed, and a descriptor for the packet is sent to a queue. The order in which the last segments of the packets are transmitted maintains order amongst the packets. | 08-07-2014 |
20140281043 | SYSTEM AND METHOD FOR TRANSFERRING DATA BETWEEN COMPONENTS OF A DATA PROCESSOR - A data processing device includes a plurality of devices, a processor core, a memory, and a queue manager. The processor core stores one or more commands in a command queue of the memory to be executed by the plurality of devices to implement a data transfer path. The queue manager stores a frame queue for each of the plurality of devices. Each frame queue includes a first field having a pointer to an address of the command queue, and a second field to identify a next-in-sequence frame queue. A first device stores a data descriptor in the frame queue of the second device to initiate a data transfer from the first device to the second device. The data descriptor includes a field to indicate an offset value from the address of the command queue to a location of a command to be executed by the second device. | 09-18-2014 |
20140281335 | SYSTEM AND METHOD FOR ASSIGNING MEMORY ACCESS TRANSFERS BETWEEN COMMUNICATION CHANNELS - A communication channel controller includes a queue, a memory map, and a scheduler. The queue to store a first memory transfer request received at the communication channel controller. The memory map stores information to identify a memory address range to be associated with a memory. The scheduler to compare a source address of the first memory transfer in the queue to the memory address range in the memory map to determine whether the source address of the first memory transfer request targets the memory, and in response allocate the first memory transfer request to a first communication channel of a plurality of communication channels in response to the first communication channel having all of its outstanding memory transactions to a common source address bank and source address page as a source address bank and a source address page of the first memory transfer request. | 09-18-2014 |
20140351825 | SYSTEMS AND METHODS FOR DIRECT MEMORY ACCESS COHERENCY AMONG MULTIPLE PROCESSING CORES - A multi-core system configured to execute a plurality of tasks and having a semaphore engine and a direct memory access (DMA) engine capable of selecting, by a task scheduler of a first core, a first task for execution by the first core. In response to a semaphore lock request, the task scheduler of the first core switches the first task to an inactive state and selects a next task for execution by the first core. After the semaphore engine acquires the semaphore lock of the first semaphore, a data transfer request is provided to the DMA engine. In response to the data transfer request, the DMA engine transfers data associated with the locked first semaphore to the entry of the workspace of the first core. | 11-27-2014 |
20150268985 | Low Latency Data Delivery - The present invention relates to apparatus and methods for low latency data delivery within multi-core processing systems. The apparatus and method comprises assigning a task to a processing core; identifying a job within the task to be performed via an accelerator; performing and completing the job via the accelerator; generating output data including associated status information via the accelerator, the status information including an associated inactive write strobe; snooping the status information to determine when the job being performed by the accelerator is completed, the snooping comprising snooping the status information; and continuing executing the task using the output data associated with the status information. | 09-24-2015 |
Patent application number | Description | Published |
20100279435 | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system. | 11-04-2010 |
20110189856 | High Sensitivity Real Time Profile Control Eddy Current Monitoring System - A method of chemical mechanical polishing a metal layer on a substrate includes polishing the metal layer on the substrate at first and second polishing stations, monitoring thickness of the metal layer during polishing at the first and second polishing station with first and second eddy current monitoring systems having different resonant frequencies, and controlling pressures applied by a carrier head to the substrate during polishing at the first and second polishing stations to improve uniformity based on thickness measurements from the first and second eddy current monitoring systems. | 08-04-2011 |
20110189925 | High Sensitivity Real Time Profile Control Eddy Current Monitoring System - An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, and an eddy current monitoring system to generate an eddy current signal. The eddy current monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a first prong extending from the back portion in a first direction normal to the surface of the platen and having a width in a second direction parallel to the surface of the platen, and second and third prongs extending from the back portion in parallel with the first protrusion, the second and third prongs positioned on opposite sides of and equidistant from the first prong. A spacing between each of the second and third prongs and the first prong is approximately equal to twice the width of the first prong. | 08-04-2011 |
20120064801 | Feedback Control of Polishing Using Optical Detection of Clearance - A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure. | 03-15-2012 |
20120276661 | HIGH SENSITIVITY EDDY CURRENT MONITORING SYSTEM - A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms. | 11-01-2012 |
20120276662 | EDDY CURRENT MONITORING OF METAL FEATURES - A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile. | 11-01-2012 |
20120276817 | EDDY CURRENT MONITORING OF METAL RESIDUE OR METAL PILLARS - A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed. | 11-01-2012 |
20130224890 | Feedback Control Using Detection Of Clearance And Adjustment For Uniform Topography - A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio. | 08-29-2013 |
20140127971 | IN-SITU MONITORING SYSTEM WITH MONITORING OF ELONGATED REGION - A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal. | 05-08-2014 |
20150118765 | DETERMINATION OF GAIN FOR EDDY CURRENT SENSOR - In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain. | 04-30-2015 |
20150118766 | DETERMINATION OF GAIN FOR EDDY CURRENT SENSOR - A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain. | 04-30-2015 |
20150224623 | ADJUSTING EDDY CURRENT MEASUREMENTS - Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρ | 08-13-2015 |
Patent application number | Description | Published |
20080254722 | PAD CONDITIONER - A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad. | 10-16-2008 |
20100081360 | USE OF PAD CONDITIONING IN TEMPERATURE CONTROLLED CMP - A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range. | 04-01-2010 |
20100116990 | METROLOGY FOR GST FILM THICKNESS AND PHASE - Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes. | 05-13-2010 |
20100130013 | SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING - A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof. | 05-27-2010 |
20100185314 | GST Film Thickness Monitoring - In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined. | 07-22-2010 |
20140004626 | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING | 01-02-2014 |
20150194356 | FEEDBACK OF LAYER THICKNESS TIMING AND CLEARANCE TIMING FOR POLISHING CONTROL - During polishing of a first substrate at a first polishing station, a sequence of measurements by a first in-situ monitoring system is monitored to determining a first time at which the first sequence exhibits a first predefined feature indicating a predetermined thickness of an overlying layer, and during polishing of the first substrate at a second polishing station, a sequence of measurements by a second in-situ monitoring system is monitored to determine a second time indicating clearance of the overlying layer and exposure of the underlying layer. The first time is used to calculate a first adjusted polishing pressure for a second substrate at the first polishing station, and the second time is used to calculate a second adjusted polishing pressure for the second substrate at the second polishing station. | 07-09-2015 |