Kuan-Chieh
Kuan-Chieh Chen, New Taipei City TW
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20140179138 | PROTECTION DEVICE FOR PROTECTING A POWER CABLE CONNECTOR AND RELATED POWER SUPPLY AND ELECTRONIC SYSTEM - A protection device for protecting a power cable connector includes one sensor, a separation mechanism and a processing unit. The sensor is for sensing a relative distance and a moving speed of an external object. The separation mechanism is connected to the power cable connector in a separable manner. The processing unit is electrically connected to the sensor for controlling the separation mechanism to separate from the power cable connector as the sensor senses that the relative distance is less than a separation distance and the moving speed is not zero. | 06-26-2014 |
Kuan-Chieh Chen, Taipei City TW
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20090306912 | METHOD OF MEASURING LED JUNCTION TEMPERATURE - A method of measuring LED junction temperature includes the steps of: (a) obtaining a temperature curve of an LED; (b) inputting at least one rated AC voltage to the LED; (c) measuring a temperature at a specific point on an outer packaging structure of the LED, putting the temperature measured at the specific point into the temperature curve, and calculating a junction temperature of the LED by interpolation; and (d) substituting the result from the calculation in the step (c) into a numerical analysis model to obtain temperature oscillation of the LED. | 12-10-2009 |
Kuan-Chieh Huang, Hsinchu City TW
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20100270636 | ISOLATION STRUCTURE FOR BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated image sensor includes an isolation structure passing through a substrate, a sensor element formed overlying the front surface of the substrate, and a color filter formed overlying the back surface of the substrate. | 10-28-2010 |
20100279459 | METHOD FOR REDUCING CONTACT RESISTANCE OF CMOS IMAGE SENSOR - A method for performing a CMOS Image Sensor (CIS) silicide process is provided to reduce pixel contact resistance. In one embodiment, the method comprises forming a Resist Protect Oxide (RPO) layer on the CIS, forming a Contact Etch Stop Layer (CESL), forming an Inter-Layer Dielectric (ILD) layer, performing contact lithography/etching, performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at pixel contact hole area, performing contact filling, and defining the first metal layer. The Resist Protect Oxide (RPO) layer can be formed without using a photo mask of Cell Resist Protect Oxide (CIRPO) photolithography for pixel array and/or without silicide process at pixel array. The method can include implanting N+ or P+ for pixel contact plugs at the pixel contact hole area. The contact filling can comprise depositing contact glue plugs and performing Chemical Mechanical Polishing (CMP). | 11-04-2010 |
20110108940 | METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR - Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor. | 05-12-2011 |
20120288982 | METHOD FOR REDUCING CONTACT RESISTANCE OF CMOS IMAGE SENSOR - This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device. | 11-15-2012 |
20130001725 | METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR - Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor. | 01-03-2013 |
20130093036 | METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR - Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor. | 04-18-2013 |
20130107248 | ENHANCED DEFECT SCANNING | 05-02-2013 |
20140151835 | BACKSIDE ILLUMINATED IMAGE SENSORS AND METHOD OF MAKING THE SAME - A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of the substrate, where a bottom of the first isolation structure is exposed at the back surface of the substrate. The backside illuminated image sensor includes a second isolation structure formed in the peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. The backside illuminated image sensor includes an implant region adjacent to at least a portion of sidewalls of each isolation structure in the pixel region. | 06-05-2014 |
Kuan-Chieh Huang, Tainan City TW
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20140264389 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) structure including a substrate, a polymer layer, and an epitaxy layer is provided. The polymer layer is disposed on the substrate, wherein the polymer layer has a chemical formula of: | 09-18-2014 |
20140346543 | LIGHT-EMITTING DEVICE - A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover. | 11-27-2014 |
20140355238 | LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting component. The light-emitting component includes a circuit board, a light-emitting diode which is mounted on and electrically connected to the circuit board, a wavelength-converting shell which covers the light-emitting diode, and a heat conductive layer which is formed on the wavelength-converting shell and which includes graphene. | 12-04-2014 |
Kuan-Chieh Tseng, Pingtung Hsien TW
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20110034717 | METHOD FOR SYNTHESIZING 9,10-DIHYDRO-9-OXA-10-PHOSPHAPHENANTHRENE-10-OXIDE AND DERIVATIVES THEREOF - A method for synthesizing 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivatives has a step of introducing 6-chloro-6H-dibenz[c,e][1,2]oxaphosphorin or its derivative, an acid compound and water into a reacting chamber to form an organic layer having 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative and an aqueous layer. Because the acid compound is from an external source and has a catalyzing effect, employing the method can prevent side reaction from occurring and increase yield of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative. Furthermore, the method is a one-pot operation of hydrolysis, dehydration and cyclization, so the method does not require purification of intermediates. Therefore, the method is time-and cost-saving and requires less organic solvent, resulting in less pollution to the environment. | 02-10-2011 |
Kuan-Chieh Wang, Miaoli City TW
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20140091344 | ILLUMINATION COMPONENT PACKAGE - An illumination component package includes a substrate, at least one illumination component, a dam and an encapsulating glue. The illumination component is mounted on the substrate. The dam surrounds the illumination component to form a accommodating space. The inner wall of the dam includes a plurality of glue adhering microstructures. The encapsulating glue is filled in the accommodating space. | 04-03-2014 |
Kuan-Chieh Wang, Taitung City TW
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20130270601 | PACKAGE STRUCTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE - A package structure of a semiconductor light emitting device is provided. The packaging structure comprises a substrate, a circuit board, a semiconductor light emitting device and a coating layer is provided. The circuit board has an opening portion disposed on the substrate for exposing a surface of the substrate. The semiconductor light emitting device is disposed on the surface of the substrate exposed by the opening portion. The coating layer covers the sidewalls of the opening portion and the circuit board. | 10-17-2013 |
Kuan-Chieh Wang, Taitung County TW
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20140217429 | LIGHT EMITTING DIODE DISPLAY PANEL - A light emitting diode display panel includes a substrate and a plurality of pixels. The substrate includes a plurality of transverse signal lines and a plurality of longitudinal signal lines crossing each other. The pixels are mounted on the substrate in a matrix form. Each pixel includes a plurality of LEDs. The LEDs are electrically connected to one of the transverse signal lines and one of the longitudinal signal lines. | 08-07-2014 |
Kuan-Chieh Wang, Taichung City TW
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20130145364 | METHOD OF DYNAMIC RESOURCE ALLOCATION FOR A VIRTUAL MACHINE CLUSTER - A method of dynamic resource allocation for a virtual machine cluster is to calculate the resource usage weight of the respective virtual machine, the resource usage weight of the respective physical machine, and the average resource usage weight of the physical machines, to pick the physical machine with the greatest resource usage weight as the migration source machine, to pick the physical machine with the least resource usage weight as the migration object machine, and to move the virtual machine in the migration source machine with the resource usage weight thereof being closest to the migration difference value to the migration object machine to achieve the effect of load balancing. | 06-06-2013 |
20130145365 | METHOD FOR MANAGING GREEN POWER OF A VIRTUAL MACHINE CLUSTER - A method for managing green power determines if how many physical machines should run or be shut off with the gross occupied resource weight ratio of the virtual machine cluster. The standby physical machine in the non-running physical machines is elected and woke up to join as one of the running physical machines; one of the running physical machines is elected as a migration physical machine with the virtual machines therein being moved to other running physical machines, and then shut off. The resource allocation process is conducted to distribute loads of the running physical machines such that the total numbers of the running physical machines are capable of being dispatched flexibly to achieve the object of green power management. | 06-06-2013 |
Kuan-Chieh Wang, Taipei City TW
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20110126078 | DECODER AND DECODING METHOD FOR LOW-DENSITY PARITY CHECK CODES CONSTRUCTED BASED ON REED-SOLOMON CODES - Configurable permutators in an LDPC decoder are provided. A partially-parallel architecture combined with the proposed permutators is used to mitigate the increase in implementation complexity for the multi-mode function. To overcome the difficulty in efficient implementation of a high-throughput decoder, the variable nodes are partitioned into several groups, and each group is processed sequentially in order to shorten the critical-path delay and, hence, increase the maximum operating frequency. In addition, shuffled message-passing decoding can be adopted in decoders according to the invention to increase the convergence speed, which reduces the number of iterations required to achieve a given bit-error-rate performance. | 05-26-2011 |