Kraft, AT
Daniel Kraft, Klagenfurt-Viktring AT
Patent application number | Description | Published |
---|---|---|
20110304047 | Method for Producing a Composite Material, Associated Composite Material and Associated Semiconductor Circuit Arrangements - A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another. | 12-15-2011 |
Daniel Kraft, Klagenfurt AT
Patent application number | Description | Published |
---|---|---|
20090134501 | DEVICE AND METHOD INCLUDING A SOLDERING PROCESS - A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate. | 05-28-2009 |
20120267770 | DEVICE AND METHOD INCLUDING A SOLDERING PROCESS - A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate. | 10-25-2012 |
Dietrich Kraft, Wein AT
Patent application number | Description | Published |
---|---|---|
20090017051 | Allergy vaccines and their preparation - The present invention relates to a pharmaceutical composition containing a peptide and a pharmaceutically acceptable carrier or diluent wherein the peptide has a length of 8 to 50 amino acids, at least three preferably consecutive amino acids of the peptide are identical to at least three amino acids which appear in close vicinity on the molecular surface of an allergenic protein, and said at least three amino acids are solvent-exposed amino acids in the allergenic protein. The invention also concerns a method for the preparation of the pharmaceutical composition. | 01-15-2009 |
Dietrich Kraft, Wien AT
Patent application number | Description | Published |
---|---|---|
20090148466 | Process for the Preparation of Hypoallergenic Mosaic Antigens - A process for the preparation of an hypoallergenic mosaic antigen derived from an allergen is disclosed whereby a) in a first step the allergen is split into at least two parts and the IgE reactivity of each part is determined and b) in a second step those parts of the allergen which have no detectable IgE reaction are combined to a mosaic antigen which comprises the amino acids of the allergen but the order of the amino acids of the mosaic antigen is different from that of the naturally occurring allergen. | 06-11-2009 |
20110150920 | Allergy Vaccines Containing Hybrid Polypeptides - Hybrid polypeptides comprising at least two different allergenic proteins or fragments thereof wherein each fragment consists of at least eight consecutive amino acids of the respective allergenic protein are disclosed. The hybrid polypeptides and polynucleotides coding therefor can be used as pharmaceutical compositions, in particular as vaccines. | 06-23-2011 |
20120009210 | HYPALLERGENIC MOSAIC ANTIGENS AND METHODS OF MAKING SAME - Hypoallergenic mosaic antigens assembled from naturally-occurring allergens are disclosed herein. Also disclosed are methods of making such hypoallergenic mosaic antigens, particularly those derived from plant allergens such as timothy grass pollen (Phl p 1 and Phl p 2) and birch pollen (Bet v 1). In a particularly preferred embodiment, the method of making the hypoallergenic mosaic antigen involves the steps of (a) cleaving a naturally-occurring allergen into at least two, preferably at least three non-overlapping peptide fragments and (b) recombining the peptide fragments such that the mosaic antigen includes all or substantially all of the amino acids of the original naturally-occurring allergen, though in a different order. | 01-12-2012 |
Dietrich Kraft, Vienna AT
Patent application number | Description | Published |
---|---|---|
20090074801 | HYPOALLERGENIC ALLERGY VACCINES BASED ON THE TIMOTHY GRASS POLLEN ALLERGEN PHL P 7 - The present invention pertains to polypeptides derived from the timothy grass pollen allergen Phl p 7. The polypeptides display reduced allergen activity and are useful as allergy vaccines for the treatment of sensitized allergic patients and for prophylactic vaccination. | 03-19-2009 |
Gregor Kraft, A-4850 Timelkam AT
Patent application number | Description | Published |
---|---|---|
20160138195 | POLYSACCHARIDE FIBERS AND METHOD FOR PRODUCING SAME - The present invention relates to a method for the production of polysaccharide fibers which contain α(1→3)-glucan as a fiber-forming substance, as well as to the fibers made thereby, and to their use. | 05-19-2016 |
Gregor Kraft, Timelkam AT
Patent application number | Description | Published |
---|---|---|
20110009259 | CELLULOSE POWDER AND PROCESSES FOR ITS PRODUCTION - The invention relates to a process for producing spherical, non-fibrillar cellulose particles with a particle size in the range of from about 1 μm to about 400 μm from a solution of cellulose in which the solution is cooled down to below its solidification temperature wherein it is flowing freely, the solvent is washed out, the solidified cellulose solution is disintegrated to form cellulose powder comprising particles, and the disintegrated and washed out particles are dried. The invention also relates to the cellulose powder and particles made in accordance with the process of the invention. | 01-13-2011 |
Jochen Kraft, Oberaich AT
Patent application number | Description | Published |
---|---|---|
20080272413 | Light-Sensitive Component - In order to detect light with in particular a high blue component, the inversion zone and the space charge zone of a CMOS-like structure are used. In conjunction with an at least partly transparent gate electrode, in particular a transparent conductive oxide or a patterned gate electrode, it becomes possible to absorb the short-wave component of incident light within the inversion zone and to reliably conduct away the generated charge carrier pairs to first and second contacts. During operation, a control voltage is applied to the gate electrode with a magnitude that generates a continuous inversion zone below the optionally patterned gate electrode. | 11-06-2008 |
20080277749 | Light-Sensitive Component with Increased Blue Sensitivity, Method for the Production Thereof, and Operating Method - A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate. | 11-13-2008 |
20100038678 | Photodiode with a Reduced Dark Current and Method for the Production Thereof - A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced. | 02-18-2010 |
20100123254 | Semiconductor Device and a Method for Making the Semiconductor Device - An opening ( | 05-20-2010 |
20100314762 | Semiconductor Substrate with Through-Contact and Method for Production Thereof - The interlayer connection of the substrate is formed by a contact-hole filling ( | 12-16-2010 |
20110260284 | Method for Producing a Semiconductor Component, and Semiconductor Component - In the insulation layer ( | 10-27-2011 |
20120286430 | Method of Producing a Semiconductor Device and Semiconductor Device Having a Through-Wafer Interconnect - A substrate ( | 11-15-2012 |
20130221539 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A THROUGH-CONTACT AND SEMICONDUCTOR COMPONENT WITH THROUGH-CONTACT - Through the intermetal dielectric ( | 08-29-2013 |
20140038410 | METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT THROUGH THE SUBSTRATE - A semiconductor substrate ( | 02-06-2014 |
20140191413 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE COMPRISING A CONDUCTOR LAYER IN THE SEMICONDUCTOR BODY AND SEMICONDUCTOR BODY | 07-10-2014 |
20140203340 | PHOTODIODE AND PRODUCTION METHOD - The photodiode has a p-type doped region ( | 07-24-2014 |
20140367862 | SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION - The semiconductor device comprises a substrate ( | 12-18-2014 |
20150162308 | INTERPOSER-CHIP-ARRANGEMENT FOR DENSE PACKAGING OF CHIPS - The interposer-chip-arrangement comprises an interposer ( | 06-11-2015 |
20150340264 | METHOD OF APPLICATION OF A CARRIER TO A DEVICE WAFER - A device wafer having a main surface including an edge region and a carrier having a further main surface including an annular surface region corresponding to the edge region of the device wafer are provided. An adhesive is applied in the edge region and/or in the annular surface region, but not on the remaining areas of the main surfaces. The device wafer is fastened to the carrier by the adhesive. The main surface and the further main surface are brought into contact with one another when the device wafer is fastened to the carrier, while the main surface and the further main surface are fastened to one another only in the edge region. The device wafer is removed from the carrier after further process steps, which may include the formation of through-wafer vias in the device wafer. | 11-26-2015 |