Patent application number | Description | Published |
20090117490 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN - A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom. | 05-07-2009 |
20090280431 | MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME - To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): | 11-12-2009 |
20100086873 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): | 04-08-2010 |
20100104973 | COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN - There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: | 04-29-2010 |
20100136478 | Resist composition, method of forming resist pattern, novel compound, and acid generator - A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R | 06-03-2010 |
20100183981 | Positive resist composition and method of forming resist pattern - A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %. | 07-22-2010 |
20110065878 | Norbornene-Type Polymers, Compositions Thereof And Lithographic Processes Using Such Compositions - Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof. | 03-17-2011 |
20120164578 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN - A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y | 06-28-2012 |
20120308931 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and an acid generator containing compounds represented by general formulas (b1) and (b2) shown below | 12-06-2012 |
20120328982 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid; an acid generator component (B) which generates acid upon exposure; a fluorine-containing compound component (F); and a photosensitizer (G). | 12-27-2012 |
20120329969 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %. | 12-27-2012 |
20130065180 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid; an acid-generator component (B) which generates acid upon exposure; and a compound (D1) including of a cation moiety which contains a quaternary nitrogen atom, and an anion moiety represented by formula (d1-an1) or (d1-an2) shown below. In the formulas, X represents a cyclic aliphatic hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and Y | 03-14-2013 |
20130252171 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) including a structural unit (A) represented by general formula (a0-1) and a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid (R | 09-26-2013 |
20140205956 | METHOD FOR FORMING RESIST PATTERN - A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula. | 07-24-2014 |
20150198880 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND - A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a —SO | 07-16-2015 |
Patent application number | Description | Published |
20080299503 | Material for Forming Resist Protection Films and Method for Resist Pattern Formation with the Same - The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester. | 12-04-2008 |
20080311523 | Material for Formation of Resist Protection Film and Method of Forming Resist Pattern Therewith - In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used. | 12-18-2008 |
20090011375 | IMMERSION LIQUID FOR LIQUID IMMERSION LITHOGRAPHY PROCESS AND METHOD FOR FORMING RESIST PATTERN USING THE SAME - A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography. | 01-08-2009 |
20090048409 | ACRYLIC COPOLYMER - It is intended to in a liquid-immersion exposure process, simultaneously prevent any degeneration, represented by bridge, etc., of resist film during the liquid-immersion exposure using water and other various liquid-immersion exposure liquids and any degeneration of liquid-immersion exposure liquids per se, and to without increasing of the number of treatment steps, realize enhancing of the post-exposure storage stability of resist film, and to enable forming of a resist pattern of high resolution through liquid-immersion exposure. Use is made of an acrylic copolymer of the general formula: | 02-19-2009 |
20090053646 | MATERIAL FOR PROTECTIVE FILM FORMATION AND METHOD OF FORMING RESIST PATTERN THEREWITH - A material for protective film formation that is used to form an upper-layer protective film for a resist film and that contains at least a polymer component soluble in water or alkali and an alcohol containing a fluorine atom; and a method of forming a resist pattern with the use of the same. Consequently, not only can the degeneration of resist film during liquid immersion exposure by various liquids for liquid immersion exposure, for example, water and the degeneration of liquid immersion exposure liquids per se be simultaneously prevented in the liquid immersion exposure process, but also without inviting an increase of the number of processing steps, the resistance to post exposure delay of the resist film can be enhanced. | 02-26-2009 |
20090197199 | MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME - In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition. | 08-06-2009 |
20100124720 | MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME - This invention provides a material for protective film formation, comprising at least an alkali soluble polymer comprising at least one of constitutional units represented by general formulae (I) and (II) and an alcoholic solvent. The material for protective film formation can simultaneously prevent a deterioration in a resist film during liquid immersion exposure and a deterioration in a liquid for liquid immersion exposure used and, at the same time, can form a resist pattern with a good shape without the need to increase the number of treatment steps. | 05-20-2010 |