Patent application number | Description | Published |
20130307131 | SEMICONDUCTOR DEVICE - A semiconductor device includes at least one semiconductor chip, a first lead, and a second lead. The first lead includes a first portion connected to the semiconductor chip via a first wiring. The second lead includes a first portion connected to the semiconductor chip via a second wiring. The first portion of the first lead and the first portion of the second lead extend along a first direction. The first portion of the first lead is disposed so as to oppose the first portion of the second lead. The semiconductor chip is disposed between the first portion of the first lead and the first portion of the second lead. | 11-21-2013 |
20140042453 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided. | 02-13-2014 |
20140064802 | ROTATING BODY SUPPORT DEVICE AND FIXING DEVICE HAVING ROTATING BODY SUPPORT DEVICE, AND IMAGE FORMING APPARATUS - A rotating body support device includes a shaft, a bearing, a mounting member, and a protruding part. The shaft serves as a rotating shaft which rotates or a fixed shaft during rotation of a rotating body. The bearing includes an inner peripheral part for supporting the shaft and an outer peripheral part disposed at an interval in a radial direction relative to the inner peripheral part. The mounting member includes an insertion part on which the outer peripheral part is mounted, and supports the bearing. The protruding part is provided to protrude from one of a peripheral face of the shaft and the inner peripheral part of the bearing in the radial direction along a peripheral direction of the rotation. Moreover, the protruding part comes into contact, along the peripheral direction, with the other one of the peripheral face of the shaft and the inner peripheral part of the bearing. | 03-06-2014 |
20150295048 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region. | 10-15-2015 |
20150325657 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided. | 11-12-2015 |
20150340443 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region. | 11-26-2015 |
20160005826 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first insulating film has first to third regions respectively located on the first to third side surfaces. A second insulating film has a second side wall portion located on the first side wall portion. The second side wall portion has one end and the other end, the one end being connected to the second bottom portion of the second insulating film, the other end being located on one of the first and second regions, the other end being separated from the third region. | 01-07-2016 |