Patent application number | Description | Published |
20080197344 | Semiconductor, semiconductor device, complementary transistor circuit device - A semiconductor device including a semiconductor | 08-21-2008 |
20100065835 | THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM - To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide. | 03-18-2010 |
20100285632 | TFT SUBSTRATE AND METHOD FOR MANUFACTURING TFT SUBSTRATE - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer. | 11-11-2010 |
20110049511 | FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A field effect transistor including a source electrode | 03-03-2011 |
20110315936 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure. | 12-29-2011 |
20120009725 | TFT SUBSTRATE AND METHOD FOR PRODUCING TFT SUBSTRATE - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film. | 01-12-2012 |
20120184066 | SINTERED In-Ga-Zn-O-TYPE OXIDE - An oxide sintered body including In (indium element), Ga (gallium element) and Zn (zinc element), having a total content of In, Ga and Zn relative to total elements except for an oxygen element of 95 at % or more, and including a compound having a bixbyite structure represented by In | 07-19-2012 |
20120228133 | IN-GA-ZN-O-BASED OXIDE SINTERED BODY SPUTTERING TARGET WITH EXCELLENT STABILITY DURING LONG-TERM DEPOSITION - A sputtering target including an oxide sintered body including In, Zn and Ga, wherein a surface compound and an interior compound are essentially of the same crystal type(s). | 09-13-2012 |
20120228608 | SPUTTERING TARGET AND THIN FILM TRANSISTOR EQUIPPED WITH SAME - A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO | 09-13-2012 |
20120292617 | In-Ga-O OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHODS THEREFOR - An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-saluted in the indium oxide, and an atomic ratio Ga/(Ga+In) is 0.10 to 0.15. | 11-22-2012 |
20120313057 | In-Ga-Sn OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT - An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): | 12-13-2012 |
20130082218 | SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM - An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08. | 04-04-2013 |
20130101807 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound. | 04-25-2013 |
20130112971 | COMPOSITE OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10 μm or more being 2.5 or less per mm | 05-09-2013 |
20130118774 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn | 05-16-2013 |
20130140502 | SPUTTERING TARGET - An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight). | 06-06-2013 |
20130285053 | Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: | 10-31-2013 |
20130313549 | SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures. | 11-28-2013 |
20140014500 | SINTERED MATERIAL, AND PROCESS FOR PRODUCING SAME - A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm | 01-16-2014 |
20140084289 | THIN-FILM TRANSISTOR - A thin film transistor including an active layer, and has a field-effect mobility of 25 cm | 03-27-2014 |
20140102892 | IN2O3-ZNO SPUTTERING TARGET - A sputtering target including indium (In) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,
| 04-17-2014 |
20140103268 | IN2O3-SNO2-ZNO SPUTTERING TARGET - A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,
| 04-17-2014 |