Patent application number | Description | Published |
20080242793 | Fiber-Reinforced Resin Composition and Molded Body Thereof - Disclosed is a fiber-reinforced polyolefin resin composition containing (A) 1-20 mass % of carbon fibers having a fiber diameter of 3-20 μm, (B) 3-50 mass % of black lead (graphite) having an average particle diameter of 1-100 μm, and (C) 25-95 mass % of a polyolefin resin, wherein the mass ratio of the black lead (graphite) (B) (Wg) to the carbon fibers (A) (Wcf), namely mass ratio (Wg/Wcf), is 1-10. Also disclosed is a molded body of such a fiber-reinforced polyolefin resin composition. | 10-02-2008 |
20090001374 | Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates - An object of the invention is to propose a TFT substrate and a reflective TFT substrate which can be operated stably for a prolonged period of time, can be prevented from being suffering from crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the number of production steps, as well as to propose the method for producing these substrates. | 01-01-2009 |
20090075078 | MODIFIED POLYOLEFIN RESIN FOR GLASS FIBER TREATMENT, SURPACE-TREATED GLASS FIBER, AND FIBER-REINFORCED POLYOLEFIN RESIN - An acid-modified polyolefin-based resin for glass fiber treatment having: (1) an amount of components extractable with boiling methyl ethyl ketone of 8 mass % or less; (2) a number average molecular weight (Mn), measured by gel permeation chromatography (GPC), of 6,000 to 48,000; and (3) an amount of an acid which has been added, measured by Fourier transform infrared spectroscopy, of 0.1 to 12 mass %. | 03-19-2009 |
20090090914 | SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR - A transparent semiconductor thin film | 04-09-2009 |
20090104379 | TRANSPARENT ELECTRODE FILM AND ELECTRONIC DEVICE - A transparent electrode film including an oxide containing indium, zinc and tin and having a thickness of 25 nm or less. A transparent electrode film including an oxide containing indium and zinc and having a thickness of 30 nm or less. | 04-23-2009 |
20090121199 | IN SM OXIDE SPUTTERING TARGET - A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements. | 05-14-2009 |
20090127548 | SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCING THE SAME - This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10 | 05-21-2009 |
20090160741 | ELECTRO-OPTIC DEVICE, AND TFT SUBSTRATE FOR CURRENT CONTROL AND METHOD FOR MANUFACTURING THE SAME - To provide an electro-optic apparatus which can directly control alternating current, output significantly high-frequency alternating current, stably output a large amount of power, and reduce manufacturing cost, as well as a TFT substrate for current control and the method for producing the same. | 06-25-2009 |
20090250668 | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM - An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B. | 10-08-2009 |
20090267064 | SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING SAME, AND THIN FILM TRANSISTOR - The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10 | 10-29-2009 |
20090297819 | Fiber-reinforced resin composition and molded article thereof - A fiber-reinforced resin composition comprising: (A) a polyolefin-based resin; (B) glass fibers having (B1) an average diameter of 3 to 30 μm and (B2) an average aspect ratio of 50 to 6000; and (C) an acid-modified polypropylene-based resin exhibiting (C1) a change in amount of acid added, measured by Fourier transform infrared spectroscopy, before and after being treated in methyl ethyl ketone at 70° C. for three hours of 0.8 mass % or less, and having (C2) a melt flow rate (load: 2.16 kg, temperature: 230° C.) of 20 to 2000 g/10 min; the composition containing the components (A) to (C) at such a ratio (mass ratio) that (B):[(A)+(C)]=5 to 80:95 to 20 and (A):(C)=0 to 99.5:100 to 0.5. | 12-03-2009 |
20090308635 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT ELECTRODE FOR TOUCH PANEL - A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In | 12-17-2009 |
20100108502 | Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa | 05-06-2010 |
20100117071 | FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR - To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes. | 05-13-2010 |
20100127253 | TFT SUBSTRATE AND METHOD FOR MANUFACTURING TFT SUBSTRATE - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer. | 05-27-2010 |
20100140599 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY - A semiconductor device includes an organic semiconductor layer | 06-10-2010 |
20100140609 | SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR - An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10 | 06-10-2010 |
20100155717 | NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THE NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THIN-FILM TRANSISTOR, FIELD-EFFECT-TRANSISTOR, LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET - This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device ( | 06-24-2010 |
20100163860 | SEMICONDUCTOR THIN FILM, METHOD FOR MANUFACTURING THE SAME, THIN FILM TRANSISTOR, AND ACTIVE-MATRIX-DRIVEN DISPLAY PANEL - Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film | 07-01-2010 |
20100163876 | REFLECTIVE TFT SUBSTRATE AND METHOD FOR MANUFACTURING REFLECTIVE TFT SUBSTRATE - A reflective TFT substrate which can be operated for a prolonged period of time due to the presence of a protective insulating film, is free from occurrence of crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the production steps in the production process. A reflective TFT substrate | 07-01-2010 |
20100170696 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn | 07-08-2010 |
20100266787 | OXIDE MATERIAL AND SPUTTERING TARGET - An oxide material including indium (In), tin (Sn), and metal element M, and including an ilmenite structure compound; a sputtering target composed thereof; a transparent conductive film formed by using such a sputtering target; and a transparent electrode composed of such a transparent conductive film. | 10-21-2010 |
20100276688 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-04-2010 |
20100283055 | TFT SUBSTRATE AND TFT SUBSTRATE MANUFACTURING METHOD - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film. | 11-11-2010 |
20100289020 | FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): | 11-18-2010 |
20100295042 | FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE - A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas. | 11-25-2010 |
20100320457 | ETCHING SOLUTION COMPOSITION - Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali. | 12-23-2010 |
20110006297 | PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR - A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching. | 01-13-2011 |
20110050733 | THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE - To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device. | 03-03-2011 |
20110121244 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound. | 05-26-2011 |
20110168994 | SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.75 | 07-14-2011 |
20110177696 | SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures. | 07-21-2011 |
20110180392 | SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR, COMPRISING InGaO3(ZnO) CRYSTAL PHASE AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO | 07-28-2011 |
20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 07-28-2011 |
20110198586 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 08-18-2011 |
20110240935 | SINTERED COMPLEX OXIDE AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In | 10-06-2011 |
20110240988 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET - A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %. | 10-06-2011 |
20110243835 | INDIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET - A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%. | 10-06-2011 |
20110260118 | IN-GA-ZN-SN TYPE OXIDE SINTER AND TARGET FOR PHYSICAL FILM DEPOSITION - An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga | 10-27-2011 |
20110260121 | COMPOSITE OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10 μm or more being 2.5 or less per mm | 10-27-2011 |
20110260157 | SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME - A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor | 10-27-2011 |
20120093712 | In-Ga-Zn Type Oxide Sputtering Target - A sputtering target including oxide A shown below and indium oxide (In | 04-19-2012 |
20120118726 | IN-GA-ZN-O TYPE SPUTTERING TARGET - A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures. | 05-17-2012 |
20120168748 | SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR - An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10 | 07-05-2012 |
20120216710 | IN-GA-ZN-TYPE OXIDE, OXIDE SINTERED BODY, AND SPUTTERING TARGET - An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak. | 08-30-2012 |
20120273777 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure. | 11-01-2012 |
20130140175 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 06-06-2013 |
20130146452 | FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): | 06-13-2013 |
20130221348 | SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR - A transparent semiconductor thin film | 08-29-2013 |
20130313548 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-28-2013 |
20140001040 | SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM | 01-02-2014 |
20140167033 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 06-19-2014 |
20140339073 | Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa | 11-20-2014 |