Koji Nakayama
Koji Nakayama, Tokyo JP
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20090131609 | Episulfide Group-Substituted Silicon Compound and Thermosetting Resin Composition Containing Same - Disclosed is an episulfide group-substituted silicon compound (A) having a backbone structure represented by the following formula (1). | 05-21-2009 |
20100106698 | USER TERMINAL DEVICE AND METHOD FOR CONTROLLING THE SAME - A method is provided that automatically saves data on a user terminal of a thin client system to a file server or to the user terminal by appropriately and efficiently sorting the data. System update data such as a patch for the user terminal and confidential data that should be saved to the server are distinguished when written to a secondary storage device, and separately cached into memory. Then, the confidential data that should be saved to the server is automatically uploaded to the file server at any given timing, for example, at shut-down of the terminal, whereby a minimum amount of data can be efficiently saved to the file server. | 04-29-2010 |
20100250852 | USER TERMINAL APPARATUS AND CONTROL METHOD THEREOF, AS WELL AS PROGRAM - A user terminal apparatus and a control method therefor, which constitutes part of a thin client system which transfers data to a file server and stores the data therein. The system aggregates user data in a file server by controlling writing into a secondary storage device of the user terminal and controlling writing out to an external storage medium, to prevent loss and leakage of confidential information. | 09-30-2010 |
20110039721 | METHOD FOR PREDICTION ABOUT CARCINOGENICITY OF SUBSTANCE IN RODENT - Disclosed is a method for predicting about the carcinogenicity of a substance of interest in a rodent, which comprises the steps of: administering a solution of the substance to a test group and administering a solvent used in the solution to a control group; extracting mRNA from each of the test group and the control group, and measuring the expression level of mRNA for each of genes obtained by selecting at least one gene from (A) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 1 to 5, (B) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 6 to 8 and (C) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 9 to 32; determining whether or not a significant difference in the level of mRNA expressed from the gene is observed between the test group and the control group; and determining that the substance has carcinogenicity when a significant difference in the level of the expression of mRNA from any one of the genes is observed between the test group and the control group and the direction of increase or decrease in the level of the expression of mRNA from any one of the genes is the same as the tendency which is previously defined for each gene. | 02-17-2011 |
20130085997 | INFORMATION SEARCH SYSTEM, SEARCH SERVER AND PROGRAM - In order for a conventional information search system to realize online updating of search indices, there would have to be provided two systems of physical storages for storing copies of indices, namely one for searching and another for updating. By means of a snapshot function provided by an OS, duplicates of original indices are created. A search engine is attached to those duplicates and is used as such, while an index update process is applied to the original index data. | 04-04-2013 |
20130164203 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD | 06-27-2013 |
20130198251 | FILE LIST GENERATION METHOD AND SYSTEM, FILE LIST GENERATION APPARATUS, AND PROGRAM - A file scan process is carried out, in parallel in a distributed manner, on a file server for which indices have been created once, to create a list of added, changed, or updated files. A file list of indexed scan target files is created by a distributed processing server. Directory URLs of the scan target files are acquired from the file list and analyzed to count a number of directories in each layer and determine a division unit for division of a scan process to be carried out on the scan target directories, based on a result of the counting. | 08-01-2013 |
Koji Nakayama, Osaka-Shi JP
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20100258817 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100261333 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
Koji Nakayama, Amagasaki-Shi JP
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20100032686 | Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage - Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named. | 02-11-2010 |
20100084663 | Silicon Carbide Zener Diode - A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type. | 04-08-2010 |
Koji Nakayama, Osaka JP
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20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
Koji Nakayama, Ibaraki JP
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20090134028 | Method of Estimating Effect of Test Chemical on Living Organisms - A method of predicting an effect of a test chemical on living organisms, which comprises: | 05-28-2009 |
Koji Nakayama, Seki-Shi JP
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20080238959 | Image Recording Apparatus - An image recording apparatus improves the operating efficiency while preventing trouble due to the contact of a recording medium with a discharging surface of a recording head. A distance sensor for detecting the distance of the leading edge of a sheet from a conveying surface is provided upstream from the inkjet head in the conveying direction of the sheet. A gap control unit controls a frame moving mechanism to move the inkjet head up so that a gap between the discharging surface and the conveying surface increases when the distance detected by the distance sensor is above a first distance, and the gap distance may be increased by different amounts depending on the distance detected by the distance sensor. A discharging control unit controls the inkjet head to discharge ink droplets after the gap is increased. | 10-02-2008 |
20080239049 | Image Recording Apparatus - An image recording apparatus includes a recording head that records an image on a record medium, a first and a second rollers respectively having rotation shafts parallel to each other, and an endless conveyor belt which is looped around the first and second rollers, and which has an external surface for conveying thereon a record medium in a conveyance direction from the first roller toward the second roller while supporting the record medium. On the circumferential surface of the second roller, provided are a abutting region abutting the internal surface of the conveyor belt, and a larger diameter region not abutting the internal surface of the conveyor belt and having a radius surpassing a sum of a thickness of the conveyor belt and a radius of the abutting region. | 10-02-2008 |
Koji Nakayama, Kanazawa-Shi JP
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20080218678 | LIQUID CRYSTAL DISPLAY DEVICE - A power supply wiring which is disposed on an array substrate and supplies a predetermined potential to a counter-electrode, includes a power supply pad which is included in a third electrically conductive layer, a first wiring which is included in a first electrically conductive layer and is electrically connected to the power supply pad, a second wiring which is included in a second electrically conductive layer, and a bridge wiring which is included in the third electrically conductive layer and electrically connects the first wiring and the second wiring, the power supply wiring being electrically connected to the counter-electrode via an electrically conductive member which is disposed on the power supply pad. | 09-11-2008 |
Koji Nakayama, Hiroshima JP
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20110135550 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-09-2011 |
20110158891 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-30-2011 |
20130291717 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - A CO2 recovery system includes an absorber | 11-07-2013 |
Koji Nakayama, Miyagi JP
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20140045680 | METHOD FOR MANUFACTURING METALLIC GLASS NANOWIRE, METALLIC GLASS NANOWIRE MANUFACTURED THEREBY, AND CATALYST CONTAINING METALLIC GLASS NANOWIRE - Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state. | 02-13-2014 |
Koji Nakayama, New York, NY US
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20140076165 | CO2 RECOVERY DEVICE - A regeneration tower | 03-20-2014 |
20140076166 | CARBON DIOXIDE RECOVERY DEVICE - A carbon dioxide recovery unit is provided with: an absorption tower for bringing an exhaust gas into contact with a CO | 03-20-2014 |
20140076708 | STEAM SUPPLY SYSTEM AND CO2 RECOVERY PLANT HAVING THE SAME - A steam supply system that can reheat CO | 03-20-2014 |
20140102096 | CARBON-DIOXIDE RECOVERY SYSTEM - It is an object to supply stable motive power to a compressor even if load variations have occurred in an electric power station. Provided is a CO | 04-17-2014 |
20140190349 | DEHYDRATION EQUIPMENT, GAS COMPRESSION SYSTEM, AND DEHYDRATION METHOD - In a dehydration equipment, a regenerative gas heater heats a portion of CO | 07-10-2014 |
Koji Nakayama, Hiroshima-Shi JP
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20140238236 | COGENERATION SYSTEM CONCEPT FOR CO2 RECOVERY PLANT | 08-28-2014 |
20140248206 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD | 09-04-2014 |
Koji Nakayama, Ogaki-Shi JP
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20140246102 | FLOW CONTROL VALVE - A flow control valve includes a housing that includes a fluid inlet and a fluid outlet; a valve body that together with the housing, forms a first chamber with a variable volume and a second chamber with a variable volume; a communication passage that connects the first chamber and the second chamber together; and an urging portion that urges the valve body in a direction in which the volume of the first chamber decreases. When the valve body moves in a direction to increase the volume of the first chamber against urging force of the urging portion, the valve body moves closer to the fluid outlet and reduces a degree to which the second chamber is communicated with the fluid outlet. | 09-04-2014 |
20150027387 | CONTROL DEVICE FOR COOLING SYSTEM - The influenced of condensed water on an EGR device is alleviated. | 01-29-2015 |
Koji Nakayama, Hyogo JP
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20150214306 | SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE - The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×10 | 07-30-2015 |