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20120074369 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY ELEMENT ARRAY - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 003-29-2012 | |
20120235111 | NONVOLATILE MEMORY ELEMENT HAVING A TANTALUM OXIDE VARIABLE RESISTANCE LAYER - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 009-20-2012 | |