Patent application number | Description | Published |
20090056877 | Plasma processing apparatus - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 03-05-2009 |
20090181548 | VERTICAL PLASMA PROCESSING APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS - A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space. | 07-16-2009 |
20100186898 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance. | 07-29-2010 |
20120103525 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 05-03-2012 |
20140295082 | DRIVING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM AND VERTICAL HEAT TREATMENT APPARATUS - A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container. | 10-02-2014 |
20150259799 | VERTICAL HEAT TREATMENT APPARATUS, METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, AND STORAGE MEDIUM - A vertical heat treatment apparatus for performing a film forming treatment on a plurality of target substrates having a surface with convex and concave portions includes: a gas supply unit that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members made of quartz and installed to be positioned respectively above and below a region in which the plurality of target substrates held and supported by a substrate holding and supporting unit are disposed, wherein if S is a surface area per unit region of the gas distribution adjusting members and S0 is a surface area per unit region obtained by dividing a surface area of the target substrate by a surface area calculated based on an external dimension of the target substrate, a value obtained by dividing S by S0 (S/S0) is set to be 0.8 or more. | 09-17-2015 |
20150267293 | OPERATING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM, AND VERTICAL HEAT TREATMENT APPARATUS - An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis. | 09-24-2015 |
20150275359 | Substrate Processing Apparatus - The present disclosure provides a substrate processing apparatus for supplying a process gas to substrates to perform a process thereon. The apparatus comprises: an electrode installed to extend in a length direction of the substrate holding unit to activate the process gas by supplying power to the process gas; a structure installed in the reaction chamber to extend in the length direction of the substrate holding unit in a height region where the substrates are arranged; and an exhaust opening configured to vacuum exhaust an interior of the reaction chamber. The structure is disposed in a region spaced apart from a portion of the electrode closest to the structure by equal to or more than 40 degrees in the left or right direction about a central portion of the reaction chamber when the reaction chamber is viewed from top. | 10-01-2015 |
20150275366 | FILM FORMING APPARATUS, FILM FORMING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - An apparatus for forming a thin film on a substrate in a reaction container by alternately supplying a raw material gas and a reaction gas into the reaction container under a vacuum atmosphere is provided. The apparatus includes: a raw material gas supply unit installed in an end portion of a supply path of the raw material gas; a pressure adjusting valve installed in an vacuum exhaust path; a pressure regulating valve and an opening and closing valve which are respectively installed in a bypass path detouring the pressure adjusting valve; a tank installed in the middle of the supply path of the raw material gas; a flow rate adjusting valve installed in a downstream side of the tank; and a control unit configured to control the opening and closing valve to be opened when the raw material gas stored in the tank is supplied into the reaction container. | 10-01-2015 |
20150275368 | Film Forming Apparatus Using Gas Nozzles - A film forming apparatus includes: first and second source gas nozzles installed so as to extend in an arrangement direction of the substrates, each of the source gas nozzles including a plurality of gas ejection holes formed to eject the source gas toward central regions of the substrates at height positions corresponding to gaps between the substrates; a reaction gas supply unit configured to supply the reaction gas into the reaction vessel; first and second source gas supply lines respectively connected to the first and second source gas nozzles; first and second tanks respectively installed on the first and source gas supply lines, and configured to accumulate the source gas in a pressurized state; valves respectively installed at upstream and downstream sides of the first tank and at upstream and downstream sides of the second tank; and an exhaust port configured to evacuate the interior of the reaction vessel. | 10-01-2015 |