Knoch
Brian J. Knoch, Fenton, MI US
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20120170710 | PATIENT SUPPORT SYSTEM AND SUPPORT SURFACE THEREFOR AND METHOD OF INSTALLATION THEREOF - A patient support surface, patient support system in combination with a CT scanner, and method of installing a patient support system for a surgical procedure is provided. The patient support surface includes a radiolucent elongate first member having laterally spaced first side members extending between opposite ends with a plurality of cross members extending between the first side members. The support surface further includes an elongate second member having laterally spaced second side members extending between opposite ends with a plurality of cross members extending between the second side members. One of the opposite ends of the first member is configured for attachment to one of the ends of the second member. The other of the opposite ends of the first member is configured for attachment to a first support, and the other of the opposite ends of the second member is configured for attachment to a second support. | 07-05-2012 |
Fred Knoch, Greer, SC US
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20130236659 | METHODS FOR VAPOR DEPOSITING HIGH TEMPERATURE COATINGS ON GAS TURBINE ENGINE COMPONENTS UTILIZING PRE-ALLOYED PUCKS - Methods for vapor depositing high temperature coatings on gas turbine components are provided, as are methods for producing pre-alloyed pucks for usage in vapor deposition processes. In one embodiment, the method includes the step of producing a pre-alloyed puck including a master alloy and a high vaporization temperature refractory metal, which has a vaporization temperature greater than each of the master alloy constituents. The pre-alloyed puck is placed over an ingot and heated to a temperature greater than the melt point of the pre-alloyed puck and less than the vaporization temperature of the high vaporization temperature refractory metal to transform the puck and a portion of the ingot into a molten pool and to produce a vapor stream containing the constituents of the master alloy and the ingot. The vapor stream is exposed to a gas turbine engine component to deposit the high temperature coating over at least one surface thereof. | 09-12-2013 |
Fred Knoch, Racine, WI US
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20150203165 | ADJUSTABLE ACCESSORY MOUNT - A motorcycle includes a frame, a rear fender coupled to a rear portion of the frame, an accessory support structure and a pair of docking structures. The frame defines a longitudinal center axis, the motorcycle having left and right sides divided by the longitudinal axis. The accessory support structure is positioned laterally adjacent to both left and right sides of the rear fender. The pair of docking structures each includes a lug secured to the frame and extending transverse to the longitudinal center axis, and a hollow fitting positionable on the lug in a plurality of different rotational orientations about a mutual axis of the lug and the fitting. The fitting defines a docking surface with a non-circular cross-section. Lateral offset of the docking surface may be adjustable by reversing the fitting on the lug. | 07-23-2015 |
Frederich H. Knoch, Racine, WI US
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20090001114 | SADDLEBAG MOUNTING SYSTEM FOR A MOTORCYCLE - A saddlebag mounting system for use with a motorcycle that includes a frame having a mounting location for coupling a footpeg to the motorcycle. The saddlebag mounting system includes a first bracket configured to securely attach the mounting location, a second bracket removably coupled to the first bracket, and a saddlebag coupled to the second bracket such that uncoupling the second bracket from the first bracket disconnects the saddlebag and the second bracket from the motorcycle and leaves the first bracket attached to the frame. | 01-01-2009 |
Joachim Knoch, Obfelden CH
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20090200540 | Metal-Oxide-Semiconductor Device Including a Multiple-Layer Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain. | 08-13-2009 |
20090200605 | Metal-Oxide-Semiconductor Device Including an Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel. | 08-13-2009 |
20090273011 | Metal-Oxide-Semiconductor Device Including an Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel. | 11-05-2009 |
20100072460 | NANOELECTRONIC DEVICE - An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device. | 03-25-2010 |
20110049474 | TUNNEL FIELD EFFECT DEVICES - An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state. | 03-03-2011 |