Patent application number | Description | Published |
20090126491 | INERTIAL SENSOR - Techniques capable of suppressing fixation between a movable electrode and a fixed electrode in an inertial sensor and preventing the inertial sensor from malfunctioning are provided. The movable electrode, the fixed electrode provided so as to face the movable electrode, a peripheral conductor facing both the movable electrode and the fixed electrode, and a demodulation circuit and a voltage adjustment circuit which adjust the electric potential of the peripheral conductor so that the electric potential of the peripheral conductor becomes the same as the electric potential of the movable electrode are provided, and a change in the capacitance between the movable electrode and the fixed electrode is detected. | 05-21-2009 |
20090134459 | Semiconductor device and method of manufacturing the same - As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate. | 05-28-2009 |
20090183568 | INERTIAL SENSOR - An angular rate sensor and an acceleration sensor are sealed at the same sealing pressure. The sealing pressure at this time is put into a reduced pressure state below the atmospheric pressure in view of improving a detection sensitivity of the angular rate sensor. Even in the reduced pressure atmosphere, to improve the detection sensitivity of the acceleration sensor, a shift suppressing portion (damper) for suppressing shifts of a movable body of the acceleration sensor is provided. This shift suppressing portion includes a plurality of protruding portions integrally formed with the movable body and a plurality of protruding portions integrally formed with a peripheral portion, and the protruding portions are alternately disposed separately at equal intervals. | 07-23-2009 |
20100127715 | SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND CONTROL DEVICE USING THE SAME - A highly reliable semiconductor physical quantity sensor whose performance does not change much over time is provided. In the semiconductor physical quantity sensor, movable electrodes which can be displaced by applying a physical quantity are initially displaced using an electrostatic force, and the movable electrodes are used to detect the direction and magnitude of a physical quantity applied to the semiconductor physical quantity sensor. The semiconductor physical quantity sensor is highly reliable and its performance does not change much over time compared with semiconductor physical quantity sensors using a known method in which movable electrodes are initially displaced using a compressive stress film. | 05-27-2010 |
20110048129 | Inertial Sensor and Method of Manufacturing the Same - An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap. | 03-03-2011 |
20110100126 | Capacitance Sensor - A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode. | 05-05-2011 |
20110132089 | Inertial Sensor - In order to provide an inertial sensor such as an acceleration sensor which can be downsized and in which a high SNR can be obtained as having a plurality of measurement ranges, an inertial sensor for detecting an inertial force of acceleration based on an electrostatic capacitance change of a detecting unit includes a plurality of detecting units D | 06-09-2011 |
20130133422 | Inertial Sensor - In order to provide an inertial sensor capable of suppressing a wrong diagnosis even in an adverse environment such that sudden noise occurs, an inertial sensor is provided with a movable part ( | 05-30-2013 |
20130241013 | Physical Quantity Detector - Provided is an inertial sensor device comprising a detection part having an MEMS structure, wherein convenience during sensor installation is ensured while erroneous operation caused by the application of external vibration is controlled. To achieve this objective, an anti-vibration structure ( | 09-19-2013 |
20130285172 | Combined Sensor - To provide a combined sensor that can detect a plurality of physical quantities. With the combined sensor, it is possible to realize, while maintaining performance, a reduction in size and a reduction in costs by increasing elements that can be shared among respective sensors. A weight M | 10-31-2013 |