Patent application number | Description | Published |
20090060955 | Drug delivery vehicle that mimics viral properties - A drug delivery vehicle for targeted delivery of a drug mimics viral properties of size, capsid-like protein capsule, cell-specific entry, toxin release, destruction of infected cells, and migration to neighboring cells. This vehicle, termed a virogel, contains a hydrophobic polymeric core, a hydrophilic inner shell, a hydrophilic outer shell, and a ligand. An illustrative drug-loaded virogel includes poly(L-histidine-co-phenylalanine) as the core, doxorubicin loaded in the core, polyethylene glycol as the inner shell, bovine serum albumin as the outer shell, and folic acid as the ligand. | 03-05-2009 |
20100009926 | PH-SENSITIVE POLYMERIC MICELLES FOR DRUG DELIVERY - Mixed micelles containing poly(L-histidine-co-phenylalanine)-poly(ethylene glycol) block copolymer and poly(L-lactic acid)-poly(ethylene glycol) block copolymer are a pH-sensitive drug carrier that release the drug in an acidic microenvironment, but not in the blood. Since the microenvironment of solid tumors is acidic, these mixed micelles are useful for treating cancer, including those cancers exhibiting multidrug resistance. Targeting ligands, such as folate, can also be attached to the mixed micelles for enhancing drug delivery into cells. Methods of treating a warm-blooded animal with such a drug are disclosed. | 01-14-2010 |
Patent application number | Description | Published |
20110012478 | Thin-Film Device and Method of Fabricating The Same - A thin-film device and a method of fabricating the thin-film device are provided herein. The thin-film device comprises a bond layer, a film layer that has bulk material properties, and a substrate that has a heat-sensitive component disposed thereon. The method of fabricating the thin-film device comprises the step of providing an active material that has bulk material properties. The active material is bonded to the substrate through the bond layer. After bonding the active material to the substrate, the active material that is bonded to the substrate is thinned to produce the film layer of the thin-film device. The substrate is provided with the heat-sensitive component disposed thereon prior to bonding the active material to the substrate. | 01-20-2011 |
20110140577 | INCREASED FREQUENCY POWER GENERATION USING LOW-FREQUENCY AMBIENT VIBRATIONS - An increased frequency power generator that includes a pair of transducers located on opposite sides of a suspended inertial mass. Magnetic attraction is used to couple the mass to each of the two transducers in alternating fashion in response to vibration and other movement externally imparted on the generator. Each transducer includes a suspended magnetic element that couples and decouples to the inertial mass as it reciprocates in the housing due to the applied external moving force. As the inertial mass decouples from one transducer on its way to magnetically connecting to the other transducer, the decoupled suspended magnetic element oscillates at a frequency greater than the imparting force, thereby generating electrical power. | 06-16-2011 |
20140065660 | MICROFLUIDIC BIOLOGICAL BARRIER MODEL AND ASSOCIATED METHOD - A biological barrier model is disclosed. In some embodiments the barrier may be configured to model the blood brain barrier. The model may include a membrane having one or more cell cultures disposed thereon. The cells cultures may be grown in the presence of shear stress induced by flow through the device in some embodiments. The size of the barrier, as well as the distance to electrodes and other sensors, may be in the microscale range. Further, in some embodiments the model may comprise an array of parallel channels and membranes. | 03-06-2014 |
20150145470 | MICRO-ENERGY HARVESTING DEVICE FOR SPACE-LIMITED APPLICATIONS - Implementations of the present invention relate to apparatuses, systems, and methods for harvesting mechanical energy from micro-energy sources and converting that energy into electrical energy. Such mechanical energy sources may be from common motions or processes such as the movement of cars or people. A device for the harvesting of such excess energy may utilize a circulation channel in which magnets may induce currents in coils as the magnets follow a continuous path. | 05-28-2015 |
20150222166 | FLEXIBLE DEVICES, SYSTEMS, AND METHODS FOR HARVESTING ENERGY - Embodiments of the present invention relate to systems, methods, and apparatus for harvesting energy by transforming mechanical energy into electrical energy. Particularly, the energy can be harvested by converting mechanical energy produced during operations or movements of a body (e.g., a vehicle, a person, a machine, etc.) that generate alternating or periodic force, which can be received by the energy harvesting device. | 08-06-2015 |
Patent application number | Description | Published |
20090181520 | Method and Structure for Dividing a Substrate into Individual Devices - A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies. | 07-16-2009 |
20090273082 | METHODS AND DESIGNS FOR LOCALIZED WAFER THINNING - Methods for localized thinning of wafers used in semiconductor devices and the structures formed from such methods are described. The methods thin localized areas of the backside of the semiconductor wafer to form recesses with a bi-directional channel design that is repeated within the wafer (or die) so that no straight channel line crosses the wafer (or die). The bi-directional pattern design keeps the channels from being aligned with the crystal orientation of the wafer. The recesses are then filled by a solder ball drop process by dropping proper size solder balls into the recesses and then annealing the wafer to reflow the solder balls and flatten them out. The reflow process begins to fill in the recesses from the bottom up, thereby avoiding void formation and the resulting air traps in the reflowed solder material. Other embodiments are also described. | 11-05-2009 |
20100123225 | Semiconductor Die Structures for Wafer-Level Chipscale Packaging of Power Devices, Packages and Systems for Using the Same, and Methods of Making the Same - Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention. | 05-20-2010 |
20100148325 | Semiconductor Dice with Backside Trenches Filled With Elastic Material For Improved Attachment, Packages Using the Same, and Methods of Making the Same - Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice. | 06-17-2010 |
20100308402 | 3D CHANNEL ARCHITECTURE FOR SEMICONDUCTOR DEVICES - Semiconductor devices and methods for making such devices that contain a 3D channel architecture are described. The 3D channel architecture is formed using a dual trench structure containing with a plurality of lower trenches extending in an x and y directional channels and separated by a mesa and an upper trench extending in a y direction and located in an upper portion of the substrate proximate a source region. Thus, smaller pillar trenches are formed within the main line-shaped trench. Such an architecture generates additional channel regions which are aligned substantially perpendicular to the conventional line-shaped channels. The channel regions, both conventional and perpendicular, are electrically connected by their corner and top regions to produce higher current flow in all three dimensions. With such a configuration, higher channel density, a stronger inversion layer, and a more uniform threshold distribution can be obtained for the semiconductor device. Other embodiments are described. | 12-09-2010 |
20110006409 | NICKEL-TITANUM CONTACT LAYERS IN SEMICONDUCTOR DEVICES - Semiconductor devices containing nickel-titanium (NiTi or TiNi) compounds (or alloys) and methods for making such devices are described. The devices contain a silicon substrate with an integrated circuit having a drain on the backside of the substrate, a TiNi contact layer contacting the drain on the backside of the substrate, a soldering layer on the contact layer, an oxidation reducing layer on the soldering layer, a solder bump on the soldering layer, and a lead frame attached to the solder bump. The combination of the Ti and Ni materials in the contact layer exhibits many features not found in the Ti and Ni materials alone, such as reduced backside on-resistance, ability to form a silicide with the Si substrate at lower temperatures, reduced wafer warpage, increased ductility for improved elasticity, and good adhesion properties. Other embodiments are described. | 01-13-2011 |
20110127601 | Semiconductor Devices and Methods for Making the Same - Semiconductor devices and methods for making such devices that are especially suited for high-frequency applications are described. The semiconductor devices combine a SIT (or a junction field-effect transistor [JFET]) architecture with a PN super-junction structure. The SIT architecture can be made using a trench formation containing a gate that is sandwiched between thick dielectric layers. While the gate is vertically sandwiched between the two isolating regions in the trench, it is also connected to a region of one conductivity type of the super-junction structure, thereby allowing control of the current path of the semiconductor device. Such semiconductor devices have a lower specific resistance and capacitance relative to conventional planar gate and recessed gate SIT semiconductor devices. Other embodiments are described. | 06-02-2011 |
20110198689 | SEMICONDUCTOR DEVICES CONTAINING TRENCH MOSFETS WITH SUPERJUNCTIONS - Semiconductor devices combining a MOSFET architecture with a PN super-junction structure and methods for making such devices are described. The MOSFET architecture can be made using a trench configuration containing a gate that is sandwiched between thick dielectric layers in the top and the bottom of the trench. The PN junction of the super-junction structure is formed between n-type dopant regions in the sidewalls of the trench and a p-type epitaxial layer. The gate of the trench MOSFET is separated from the super-junction structure using a gate insulating layer. Such semiconductor devices can have a lower capacitance and a higher breakdown voltage relative to shield-based trench MOSFET devices and can replace such devices in medium to high voltage ranges. Other embodiments are described. | 08-18-2011 |
20110201179 | METHOD AND STRUCTURE FOR DIVIDING A SUBSTRATE INTO INDIVIDUAL DEVICES - A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies. | 08-18-2011 |
20110230046 | SEMICONDUCTOR DICE WITH BACKSIDE TRENCHES FILLED WITH ELASTIC MATERIAL FOR IMPROVED ATTACHMENT, PACKAGES USING THE SAME, AND METHODS OF MAKING THE SAME - Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice. | 09-22-2011 |
20120018800 | Trench Superjunction MOSFET with Thin EPI Process - Methods for fabricating MOSFET devices with superjunction having high breakdown voltages (>600 volts) with competitively low specific resistance include growing an epitaxial layer of a second conductivity type on a substrate of a first conductivity type, forming a trench in the epitaxial layer, and growing a second epitaxial layer along the sidewalls and bottom of the trench. The second epitaxial layer is doped with a dopant of first conductivity type. MOSFET devices with superjunction having high breakdown voltages include a first epitaxial layer of a second conductivity type disposed over a substrate of a first conductivity type and a trench formed in the epitaxial layer. The trench includes a second epitaxial layer grown along the sidewalls and bottom of the trench. | 01-26-2012 |
20120168947 | Methods and Designs for Localized Wafer Thinning - Methods for localized thinning of wafers used in semiconductor devices and the structures formed from such methods are described. The methods thin localized areas of the backside of the semiconductor wafer to form recesses with a bi-directional channel design that is repeated within the wafer (or die) so that no straight channel line crosses the wafer (or die). The bi-directional pattern design keeps the channels from being aligned with the crystal orientation of the wafer. The recesses are then filled by a solder ball drop process by dropping proper size solder balls into the recesses and then annealing the wafer to reflow the solder balls and flatten them out. The reflow process begins to fill in the recesses from the bottom up, thereby avoiding void formation and the resulting air traps in the reflowed solder material. Other embodiments are also described. | 07-05-2012 |
20120306009 | INTEGRATION OF SUPERJUNCTION MOSFET AND DIODE - A semiconductor structure comprises a semiconductor layer of a first conductivity type, trenches extending into the semiconductor layer, and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer. A first plurality of the trenches are disposed in a field effect transistor region that comprises a body region of the first conductivity type, source regions of the second conductivity type in the body region, and gate electrodes isolated from the body region and the source regions by a gate dielectric. A second plurality of the trenches are disposed in a Schottky region that comprises a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second plurality of the trenches to form Schottky contacts. The conductive material also contacts the conductive layer proximate an upper portion of the second plurality of the trenches. | 12-06-2012 |
20130087852 | EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES - Edge termination structures for power semiconductor devices and methods for making such structures are described. The power semiconductor devices (or power devices) contain a substrate with an epitaxial layer thereon, an array of substantially-parallel, active trenches formed in the epitaxial layer, with the active trenches containing a transistor structure with an insulated gate conducting layer, a superjunction or shielded region adjacent the active trenches; a peripheral trench surrounding the active trenches, and a source contact area within an upper surface of the epitaxial layer, where the gate conducting layer extends over the superjunction or shielded region and over the surrounding peripheral trench. Such a configuration allows the edge termination structure to be used with a wide range of breakdown voltages in power MOSFET devices containing PN superjunction structures. Other embodiments are described. | 04-11-2013 |
20140103428 | TRENCH SUPERJUNCTION MOSFET WITH THIN EPI PROCESS - Methods for fabricating MOSFET devices with superjunction having high breakdown voltages (>600 volts) with competitively low specific resistance include growing an epitaxial layer of a second conductivity type on a substrate of a first conductivity type, forming a trench in the epitaxial layer, and growing a second epitaxial layer along the sidewalls and bottom of the trench. The second epitaxial layer is doped with a dopant of first conductivity type. MOSFET devices with superjunction having high breakdown voltages include a first epitaxial layer of a second conductivity type disposed over a substrate of a first conductivity type and a trench formed in the epitaxial layer. The trench includes a second epitaxial layer grown along the sidewalls and bottom of the trench. | 04-17-2014 |
20140264569 | METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDUCTOR DEVICE - In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region. | 09-18-2014 |
Patent application number | Description | Published |
20090130752 | BIODEGRADABLE POLY(DISULFIDE AMINE)S FOR GENE DELIVERY - Poly(disulfide amine)s, methods of making, and methods of use are described. Illustrative embodiments of the poly(disulfide amine)s include poly(CBA-DAE), poly(CBA-DAB), and poly(CBA-DAH). These compositions are made by Michael addition between N,N′-cystaminebisacrylamide and N-Boc-protected diamine monomers, followed by N-Boc deprotection. Complexes are formed by mixing the poly(disulfide amine)s with nucleic acid. Delivery of the nucleic acid into cells is carried out by contacting the cells with the nucleic acid/poly(disulfide amine) complexes. | 05-21-2009 |
20090142842 | CLEAVABLE MODIFICATIONS TO REDUCIBLE POLY(AMIDO ETHYLENIMINE)S TO ENHANCE NUCLEOTIDE DELIVERY - Improved poly(amido ethylenimine) copolymers for gene delivery are disclosed. One illustrative embodiment includes polyethylene glycol (PEG) covalently bonded to a branched poly(triethyenetetramine/cystamine bisacrylamide) copolymer (poly(TETA/CBA)). The polyethylene glycol can be linear or branched. Another illustrative embodiment includes an RGD peptide covalently bonded to the poly(TETA/CBA)-PEG conjugate. Still another illustrative embodiment includes a method of using these compositions for transfecting a cell with a nucleic acid. | 06-04-2009 |
20090233365 | ARGININE-CONJUGATED BIOREDUCIBLE POLY(DISULFIDE AMINE) POLYMERS FOR GENE DELIVERY SYSTEMS - An arginine-grafted bioreducible poly(disulfide amine) (“ABP”) as a reagent for efficient and nontoxic gene delivery is described. ABP forms positively charged nano-particles of less than 200 nm with plasmid DNA. ABP is biodegraded under reducing conditions, such as the cytoplasm. ABP exhibits much higher transfection efficiency than polyethyleneimine in mammalian cells and exhibits no cytotoxicity. | 09-17-2009 |
20100010067 | ARGININE-CONJUGATED BIOREDUCIBLE POLY(DISULFIDE AMINE) POLYMERS FOR GENE DELIVERY SYSTEM - An arginine-grafted bioreducible poly(disulfide amine) (“ABP”) as a reagent for efficient and nontoxic gene delivery is described. ABP forms positively charged nano-particles of less than 200 nm with siRNA. ABP is biodegraded under reducing conditions, such as in the cytoplasm. ABP exhibits much higher transfection efficiency than polyethyleneimine in mammalian cells and exhibits no cytotoxicity. ABP is an effective delivery vehicle for gene silencing with siRNA and may be used for treating cancer. | 01-14-2010 |
20100130722 | POLYMERIC CARRIER FOR DELIVERY OF SMALL INTERFERING RNA - A carrier for delivering small interfering RNA (siRNA) into cells includes a cholesterol residue covalently bonded to oligoarginine. Mixing the siRNA with the carrier produces a complex-containing composition. Contacting a cell with the complex-containing composition results in delivery of the siRNA into the cell. Delivery of an siRNA targeted to vascular endothelial growth factor is a treatment for cancer. Methods of making the carrier and complex are also disclosed. | 05-27-2010 |
20110015257 | Hypoxia Inducible VEGF Plasmid for Ischemic Disease - Plasmids useful for treating ischemic disease, such as ischemic heart disease, are described. The plasmids express vascular endothelial growth factor (VEGF) under the control of a promoter (RTP801) that is up-regulated under hypoxic conditions. Pharmaceutical compositions for treating ischemic disease include mixtures of the hypoxia-regulated VEGF plasmids and pharmaceutically acceptable carriers. Methods for treating ischemic disease include administering such pharmaceutical compositions to a person in need of such treatment. | 01-20-2011 |
20110263025 | BIODEGRADABLE POLYDISULFIDE AMINES FOR GENE DELIVERY - Poly(disulfide amine)s, methods of making, and methods of use are described. Illustrative embodiments of the poly(disulfide amine)s include poly(N,N′-cystaminebisacrylamide-spermine), poly(N,N′-cystaminebisaciylamide-N,N′-bis(3-aminopropyl)1,3-propanediamine), poly(N,N′-cystaminebisacrylamide-N,N′-bis(3-amino-propyl)ethylenediamine), poly(N,N′-cystaminebisacrylamide-N,N′-bis(2-aminoethyl)-1,3-propanediamine), and poly(N,N′-cystaminebisacrylamide-triethylenetetramine). These compositions are made by Michael addition between N,N′-cystaminebisacrylamide and protected oligoamine monomers, followed by deprotection. Complexes are formed by mixing the poly(disulfide amine)s with a nucleic acid. Delivery of the nucleic acid into cells is carried out by contacting the cells with the nucleic acid/poly(disulfide amine) complexes. | 10-27-2011 |
20130123624 | VENTRICULAR ASSIST DEVICE CAPABLE OF IMPLANTATION OF STEM CELLS - A biologic ventricular assist device that also has the capability to capture, grow, and administer stem cells to regenerate and restore damaged myocardium in the heart. The device works in conjunction with a traditional ventricular assist device and possesses an additional external path or tube that is in-line with the path of the ventricular assist device. The external path allows for the administration of stem cells, genes, genetically modified cells or other therapeutic biologic or pharmacologic agents, as well as leading to a stem cell collecting accessory that captures circulating stem cells. The stem cell collecting accessory is also associated with a chamber for culturing the captured stem cells. The cultured stem cells can be delivered back to the heart by an electro-mechanical or ultrasound/echocardiographic delivery system that runs through the external path back into the ventricular assist device and allows for the delivery of the stem cells, or other therapeutic biologic or pharmacologic agents, directly into the internal chambers of the heart. Administering the stem cells, genes, genetically modified cells or other therapeutic biologic or pharmacologic agents, either alone or in combination, to the heart allows the myocardium to regenerate and repair itself even while the heart is attached to the ventricular assist device, ultimately allowing the heart to regenerate, recover and allow the VAD to be removed. | 05-16-2013 |
20130149783 | CLEAVABLE MODIFICATIONS TO REDUCIBLE POLY (AMIDO ETHYLENIMINES)S TO ENHANCE NUCLEOTIDE DELIVERY - Polyplex formulations were prepared using p(TETA/CBA), its PEGylated analog, p(TETA/CBA)-g-PEG2k, and mixtures of the two species at 10/90 and 50/50 wt %, respectively. Increasing PEG wt % inhibited polyplex formation. This work demonstrates the feasibility of preparing homogenous polyplexes by altering the PEG wt % using a mixture of p(TETA/CBA) and p(TETA/CBA)-g-PEG2k products. Further, a single-step method of making p(TETA/CBA)-g-PEG2k is disclosed. | 06-13-2013 |
20150057339 | HIGH MOLECULAR WEIGHT ARGININE-GRAFTED BIOREDUCIBLE POLYMERS - The polymeric carrier for delivering nucleic acid material to a cell is provided herein. The polymeric carrier can include a dendrimer group having 2 to 8 termini, each of the termini having an arginine-grafted bioreducible polymer attached thereto. In one embodiment, only a portion of the termini can have an arginine-grafted bioreducible polymer attached thereto. | 02-26-2015 |