Patent application number | Description | Published |
20080217620 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer. | 09-11-2008 |
20080224143 | THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, FLAT PANEL DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE, AND METHODS OF FABRICATING THE SAME - A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method. | 09-18-2008 |
20080296565 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON LAYER, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated. | 12-04-2008 |
20080308809 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the TFT, and a display device including the TFT are provided. The TFT includes a semiconductor layer having a channel region and source and drain regions is crystallized using a crystallization-inducing metal. The crystallization-inducing metal is gettered by either a metal other than the crystallization-inducing metal or a metal silicide of a metal other than the crystallization-inducing metal. A length and width of the channel region of the semiconductor layer and a leakage current of the semiconductor layer satisfy the following equation: Ioff/W=3.4E-15 L | 12-18-2008 |
20080315207 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING THE TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE TFT - A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process. | 12-25-2008 |
20090001380 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E | 01-01-2009 |
20090093269 | DUAL STANDBY MODE MOBILE TERMINAL AND COMMUNICATION MODE CONTROL METHOD THEREOF - A dual standby mode mobile terminal having a single smart card slot and communication mode control method thereof is provided for enabling the mobile terminal to operate in dual standby mode with a single smart card. A dual standby mode mobile terminal includes a first control unit for controlling a first communication mode, a second control unit for controlling a second communication mode, a removable dual mode smart card containing first and second communication mode data, and a buffer for loading the first and second communication mode data. A communication mode control method for the dual standby mode mobile terminal includes loading the first and second communication mode data in the buffer from the dual mode smart card under the control of the first control unit, detecting an event requiring communication mode data provided by the dual mode smart card, determining whether the communication data are any of the first and second communication mode data loaded in the buffer, and executing the event using the communication mode data loaded in the buffer. The dual standby mode mobile terminal and communication mode control method thereof enables the mobile terminal to stand by in two different communication modes (e.g. GSM and CDMA modes) with a single smart card. | 04-09-2009 |
20090104939 | MULTIMODE MOBILE TERMINAL AND SELF-SIM CONFIGURATION METHOD THEREOF - A multiple mode multiple standby mobile terminal and self configuration method of the mobile terminal are provided for automatically configuring settings on multiple Subscriber Identity Module (SIM) cards. An identity module configuration method for a multiple mode multiple standby mobile terminal includes checking, when the mobile terminal powers on, reference identity information in the mobile terminal, determining whether identity information contained in an identity card attached to the mobile terminal is included in the reference identity information and establishing, when the identity information is included in the reference identity information, a connection to a communication network indicated by the identity information. | 04-23-2009 |
20090184632 | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same - A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer. | 07-23-2009 |
20090189160 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE TFT - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst. | 07-30-2009 |
20090286576 | METHOD FOR CONTROLLING POWER IN DUAL-STANDBY MODE MOBILE TERMINAL AND APPARATUS THEREOF - The present invention relates to a method for controlling a transmission power of a dual standby mode mobile terminal. A method of controlling a transmission power of the invention includes performing a conversation standby service with a first communications network while performing a conversation service with a second communications network, and receiving a first power control level from a base station of the first communications network; comparing a second power control level that corresponds to a power code, which is set for a current output signal power, with the first power control level; and decreasing a current power code when the first power control level is greater than or equal to the second power control level. | 11-19-2009 |
20110014755 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING THE TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE TFT - A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process. | 01-20-2011 |
20110014756 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer. | 01-20-2011 |
20110145514 | METHOD AND APPARATUS FOR INTER-PROCESSOR COMMUNICATION IN MOBILE TERMINAL - A method for inter-processor communication in a mobile terminal is disclosed. The method of inter-processor communication for a mobile terminal having a first processor, a second processor, and a shared memory includes determining, by the first processor, the size of data to be sent to the second processor, comparing the determined size of the data with the size of one of multiple buffer areas in the shared memory to be used for transmission, rearranging the shared memory according to the data size when the size of the data is greater than the size of the buffer area to be used, and sending the data to the second processor through the rearranged shared memory. It is possible to increase data transfer rates between processors when inter-processor communication is performed through a shared memory in a mobile terminal having multiple processors. | 06-16-2011 |
20120220084 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON LAYER, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated. | 08-30-2012 |
20140101080 | APPARATUS AND METHOD OF DIAGNOSIS USING DIAGNOSTIC MODELS - An apparatus and a method for diagnosis are provided. The apparatus for diagnosis lesion include: a model generation unit configured to categorize learning data into one or more categories and to generate one or more categorized diagnostic models based on the categorized learning data, a model selection unit configured to select one or more diagnostic model for diagnosing a lesion from the categorized diagnostic models, and a diagnosis unit configured to diagnose the lesion based on image data of the lesion and the selected one or more diagnostic model. | 04-10-2014 |
20140122515 | APPARATUS AND METHOD FOR AIDING DIAGNOSIS - An apparatus and method for aiding diagnosis are provided. An apparatus for aiding diagnosis includes: a search unit configured to search a database in which a plurality of data is stored to find a data that matches a medical data of a patient, and a processor configured to display a diagnosis result of the medical data obtained from a computer-aided diagnosis (CAD) system and a search result obtained from the search unit | 05-01-2014 |
20140185900 | APPARATUS AND METHOD FOR SUPPORTING ACQUISITION OF MULTI-PARAMETRIC IMAGES - An apparatus and a method for supporting acquisition of a multi-parametric image are provided. An apparatus for supporting acquisition of a multi-parametric image includes: a disease selector configured to select a suspected disease of a patient based on patient information; and an image selector configured to determine a set of imaging conditions of a multi-parametric magnetic resonance image corresponding to the suspected disease based on a multi-parametric magnetic resonance imaging model. | 07-03-2014 |
20140330843 | METHOD AND APPARATUS FOR MINING TEMPORAL PATTERN - An apparatus and a method for mining temporal pattern are provided. A method for mining temporal pattern includes generating a data pattern group comprising data patterns from sequential data, generating a candidate pattern group comprising candidate patterns from the data pattern group, calculating a support value for a candidate pattern in a candidate pattern group based on a discrepancy value of the candidate pattern, and determining whether the candidate pattern satisfies a predetermined pattern requirement, based on the calculated support value. | 11-06-2014 |