Patent application number | Description | Published |
20120001152 | SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion. | 01-05-2012 |
20120025246 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate. | 02-02-2012 |
20120160157 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE - There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved. | 06-28-2012 |
20120164347 | SUSCEPTOR FOR CVD APPARATUS, CVD APPARATUS AND SUBSTRATE HEATING METHOD USING THE SAME - Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body. | 06-28-2012 |
20120167824 | CVD APPARATUS - A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe. | 07-05-2012 |
20120171815 | CVD APPARATUS AND METHOD OF FORMING SEMICONDUCTOR SUPERLATTICE STRUCTURE USING THE SAME - Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers. | 07-05-2012 |
20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 10-18-2012 |
20120322188 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate. | 12-20-2012 |
20130014694 | METHOD OF GROWING SEMICONDUCTOR EPITAXIAL THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAMEAANM MAENG; Jong SunAACI GwangjuAACO KRAAGP MAENG; Jong Sun Gwangju KRAANM KIM; Bum JoonAACI SeoulAACO KRAAGP KIM; Bum Joon Seoul KRAANM RYU; Hyun SeokAACI SuwonAACO KRAAGP RYU; Hyun Seok Suwon KRAANM LEE; Jung HyunAACI AnsanAACO KRAAGP LEE; Jung Hyun Ansan KRAANM KIM; Ki SungAACI SuwonAACO KRAAGP KIM; Ki Sung Suwon KR - A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers. | 01-17-2013 |
20130020555 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE - A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of Al | 01-24-2013 |
20130098293 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers. | 04-25-2013 |
20130099248 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer. | 04-25-2013 |
20130099255 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE THIN FILM, AND FABRICATION METHOD THEREOF - There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction. | 04-25-2013 |
20130244353 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer. | 09-19-2013 |
20130255578 | CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR - A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate. | 10-03-2013 |
Patent application number | Description | Published |
20080292956 | SECONDARY BATTERY - A secondary battery is provided, which has an improved structure of a can or a case to make an outer thickness of the secondary battery uniform. The secondary battery includes: a bare cell including an electrode assembly and a can or a pouch-shaped casing accommodating the electrode assembly; a protection circuit board disposed at a side of the bare cell; and a label adhered on a side surface of the bare cell, wherein the can or pouch-shaped casing has a stepped portion. Further, another secondary battery includes: a bare cell including an electrode assembly and a can or a pouch-shaped casing accommodating the electrode assembly; a protection circuit board disposed at a side of the bare cell; an outer case member disposed at a side surface of the bare cell; and a label adhered on the outer case member, wherein the outer case member has a stepped portion. | 11-27-2008 |
20090068501 | Protection circuit board, battery pack including the protection circuit board and method of fabricating the protection circuit board - A protection circuit board resulting in a compact battery pack having a higher capacity than a conventional battery pack of the same size, a battery pack including the protection circuit board and a method of fabricating the protection circuit board includes: a first lead terminal disposed on a first side of the protection circuit board; and a first aperture for exposing the first lead terminal to a second side of the protection circuit board. The battery pack also includes: a bare cell including an electrode terminal; a second lead terminal arranged over the electrode terminal; and a protection circuit board electrically connected to the second lead terminal and the bare cell, and having an aperture for exposing the second lead terminal arranged the first side of the protection circuit board to the second side of the protection circuit board. | 03-12-2009 |
20090085518 | Protective circuit board and battery pack using the same - A protective circuit board and a battery pack using the same, which includes a groove formed at one side and receives an external connection terminal in the groove, is provided. The protective circuit board for a battery, which is formed by mounting a number of electrical devices on a board on which a wiring pattern is formed and which is connected to a bare cell so as to protect a battery, comprises a groove formed on a surface of the protective circuit board, and an external connection terminal formed inside the groove. | 04-02-2009 |
Patent application number | Description | Published |
20130023080 | CHEMICAL VAPOR DEPOSITION AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE USING CHEMICAL VAPOR DEPOSITION - A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature. | 01-24-2013 |
20130221398 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure. | 08-29-2013 |
20130316481 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned. | 11-28-2013 |
Patent application number | Description | Published |
20090034324 | NONVOLATILE MEMORY DEVICES THAT INCLUDE A WRITE CIRCUIT THAT WRITES DATA OVER MULTIPLE WRITE PERIODS USING PULSES WHOSE PEAKS DO NOT COINCIDE WITH EACH OTHER - Nonvolatile memory devices include a plurality of nonvolatile memory cells and a write circuit that is operable to write data to the nonvolatile memory cells over a plurality of consecutive division write periods by generating a plurality of write pulses whose peaks do not coincide with one another to the nonvolatile memory cells. | 02-05-2009 |
20090175072 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICES AND RELATED METHODS OF OPERATION - A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed. | 07-09-2009 |
20090285009 | Nonvolatile memory devices using variable resistive elements - A nonvolatile memory device using a variable resistive element is provided. The nonvolatile memory device may include a memory cell array which includes an array of multiple nonvolatile memory cells having variable resistance levels depending on data stored. Word lines may be coupled with each column of the nonvolatile memory cells. Local bit lines may be coupled with each row of the nonvolatile memory cells. Global bit lines may be selectively coupled with the multiple local bit lines. | 11-19-2009 |
20100085799 | METHOD OF DRIVING MULTI-LEVEL VARIABLE RESISTIVE MEMORY DEVICE AND MULTI-LEVEL VARIABLE RESISTIVE MEMORY DEVICE - Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, the intended resistance window depending on the resistance of reference cells, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell. | 04-08-2010 |
20110193214 | SEMICONDUCTOR PACKAGE HAVING IMPROVED HEAT SPREADING PERFORMANCE - A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto, a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls. | 08-11-2011 |
Patent application number | Description | Published |
20100105573 | VECTOR AND MICROORGANISM FOR INCREASING GALACTOSE CATABOLISM AND METHODS THEREFOR - Provided herein are a recombinant vector and microorganism including the isolated SNR84 gene, and a method of increasing volumetric productivity of biofuel from a galactose-containing carbon source using the isolated SNR84 gene, the recombinant vector or the recombinant microorganism. Also disclosed herein is a method of screening yeast for genes associated with increased galactose catabolism when the genes are overexpressed. | 04-29-2010 |
20100112657 | NUCLEIC ACIDS AND CONSTRUCTS FOR INCREASING GALACTOSE CATABOLISM AND METHODS THEREFOR - Provided are a recombinant gene associated with increased galactose catabolism, and a recombinant vector and microorganism including the gene. Also disclosed are a method of producing ethanol from a galactose-containing carbon source by culturing the microorganism including the gene in a galactose-containing carbon source such that ethanol is produced, and a method of screening a gene in yeast resulting in increased galactose catabolism when overexpressed. | 05-06-2010 |
20100150141 | METHOD AND APPARATUS FOR DETERMINING MEDIA CODEC IN SIP-BASED VOIP NETWORK - A method and apparatus for determining a media codec in a Session Initiation Protocol (SIP)-based Voice over Internet Protocol (VoIP) network are provided. The method includes determining an SIP entity to be assigned with a priority for determining the media codec, generating an SIP message including information on the SIP entity having the priority for determining the media codec, and transmitting the SIP message. | 06-17-2010 |
20140178933 | ENHANCED HETEROLOGOUS PROTEIN PRODUCTION IN KLUYVEROMYCES MARXIANUS - An expression vector which is capable of overexpressing a protein of interest in a host cell, a host cell comprising the expression vector, and a method of producing a protein of interest are provided. | 06-26-2014 |
Patent application number | Description | Published |
20110068940 | APPARATUS FOR DETECTING CARBON DIOXIDE CONCENTRATION IN UNSATURATED ZONE, CARBON DIOXIDE CONCENTRATION MONITORING SYSTEM, AND CARBON DIOXIDE CONCENTRATION MONITORING METHOD - A system for monitoring a concentration of carbon dioxide in an unsaturated zone of a site in which carbon dioxide should be stored underground is provided which includes: a plurality of apparatuses for detecting the concentration of carbon dioxide in the unsaturated zone, each including a cylindrical chamber buried in an unsaturated zone under the earth surface, gas introduction holes formed in the side surface of the chamber, and a carbon dioxide concentration sensor formed through the top of the chamber for measuring the concentration of carbon dioxide contained in the gas in the chamber; a plurality of communication devices transmitting the carbon dioxide concentration from the carbon dioxide concentration sensor; and a monitoring server storing a reference carbon dioxide concentration every time zone and comparing the reference carbon dioxide concentration with the measured carbon dioxide concentrations transmitted from the communication devices to output a normal or abnormal signal. | 03-24-2011 |
20110270540 | APPARATUS FOR MEASURING FLOW VELOCITY AND FLOW RATE OF GROUNDWATER LEAKING FROM EARTH SURFACE AND APPARATUS FOR MONITORING THE SAME - An apparatus for measuring a flow velocity and a flow rate of groundwater leaking from the earth surface includes: a storage tank that is fixed to close a side surface and a top surface of an earth surface region from which the groundwater leaks and that stores the groundwater leaking from the earth surface; a liquid column tube that causes the groundwater stored in the storage tank to introduce thereto and causes a water column to rise; and a pressure-type measuring unit that is formed in a top opening of the liquid column tube and that senses a differential pressure. Accordingly, it is possible to easily and rapidly measure a flow velocity and a flow rate of groundwater leaking from the earth surface by the use of a user's terminal in real time, or by time zones, or on the user's request. | 11-03-2011 |
20120073799 | APPARATUS FOR DISTRIBUTING CARBON DIOXIDE WITH ADVANCED FUNCTION OF ADJUSTING PRESSURE AND TEMPERATURE OF CARBON DIOXIDE FOR GEOLOGIC INJECTION OF CARBON DIOXIDE - An apparatus for distributing CO | 03-29-2012 |
20120219361 | GEOLOGICAL CARBON DIOXIDE STORAGE SYSTEM WITH IMPROVED RELIABILITY - Disclosed is a geological CO | 08-30-2012 |
20130316460 | UNMANNED AUTOMATIC ALKALINITY MEASURING SYSTEM AND METHOD - Disclosed is unmanned automatic alkalinity measuring system and method. The system periodically and automatically performs collecting, measuring, and draining the sample of leachat or underground water from various sites regularly requiring the inspection or the measurement in the alkalinity thereof, without a person, thereby improving the convenience and the effectiveness in sample measurement. | 11-28-2013 |
20130335728 | SYSTEM AND METHOD FOR MONITORING UNSATURATED ZONE GAS AND NEAR-SURFACE ATMOSPHERE IN REAL TIME BY USING ISOTOPE ANALYZER - Disclosed are a system and a method for monitoring unsaturated zone gas and near-surface atmosphere in real time by using an isotope analyzer. The system includes a near-surface atmosphere analyzer including a fixing member, a plurality of near-surface gas inlets, a plurality of gas transfer members communicating with the near-surface gas inlets, an analyzing member including an isotope analyzer, which analyzes an isotope of gas transferred through the gas transfer members, a channel connected to the gas transfer members and the analyzing member to select one gas transfer member and to supply gas transferred through the selected gas transfer member to the analyzing member, and a connection member connecting the channel to the analyzing member, a communication device transmitting components of the isotope output from the isotope analyzer, and a monitoring server outputting the components of the isotope transmitted from the communication device. | 12-19-2013 |
20140111806 | APPARATUS FOR MONITORING HOT WASTE WATER DISCHARGED FROM POWER PLANT BY USING AIRBORNE MULTISPECTRAL SCANNER SYSTEM - Disclosed is an apparatus for monitoring hot waste water discharged from a power plant by using an airborne multispectral scanner system. The apparatus includes a first detector including a first image data collecting unit to obtain first image data and a liquid-phase nitrogen storing tank used to cool an image obtaining sensor, a second detector including a second image data collecting unit to obtain second image data, and a liquid-phase nitrogen storing tank used to cool an image obtaining sensor, a controller to process the first and second image data obtained by the first detector and the second detector, respectively, and an auxiliary liquid-phase nitrogen tank separated from the liquid-phase nitrogen storing tank. The auxiliary liquid-phase nitrogen tank complements liquid-phase nitrogen for cooling. | 04-24-2014 |
20150027696 | METHOD OF COLLECTING SAMPLE USING MULTI-PACKER AND APPARATUS THEREOF - Disclosed are a method of collecting samples and an apparatus thereof. The method of collecting a sample using a multi-packer includes (A) dropping a sample collecting container into a borehole to collect a sample; (B) confirming whether the dropped sample collecting container arrives at a predetermined depth; (C) allowing a first packer surrounding an outer portion of a top end of the sample collecting container and a second packer surrounding an outer portion of a bottom end of the sample collecting container to adhere closely to a wall of the borehole by expanding the first and second packers when the dropped sample collecting container arrives at the predetermined; (D) collecting the sample at an outside of a casing constituting the borehole; (E) separating the first and second packers from each other when the collecting of the sample is completed; and (F) retrieving the sample collecting container filled with the sample from the borehole. | 01-29-2015 |
20150033832 | APPARATUS FOR REMOTELY MEASURING OUTDOOR WATER QUALITY AND METHOD THEREOF - Disclosed are an apparatus for measuring outer water quality in a remote place, which is fixedly provided at a specific region having a water source so that a position of a water quality sensor is controlled in a remote place based on a real-time moving picture transmitted from a measurement area and the water quality sensor is inserted into water, thereby measuring water quality, and a method thereof. A horizontal position of a sensor holder is determined by adjusting a horizontal length variable rod in a remote place, a sensing part of at least one water quality sensor provided in the sensor holder is inserted into water by adjusting a first vertical length variable rod and a second vertical length variable rod in the remote place, a measurement value measured from the water quality sensor is transmitted to a terminal in the remote place, and the measurement value is displayed. | 02-05-2015 |
20150128430 | CLINOCOMPASS FOR MEASURING STRIKE AND DIP ON IRREGULAR GEOLOGICAL OUTCROP, AND METHOD OF MEASURING STRIKE AND DIP BY USING THE SAME - Disclosed is a clinocompass for measuring a strike and a dip on an irregular geological outcrop and a method of measuring the strike and the dip by using the same. Since the level meter of the clinometer is supported by providing a support force and a fixing force on an irregular geological outcrop having no exposed flat plane, the clinocompass serves as a supporting member or a fixing member for the measurement of the strike and the dip on an irregular geological outcrop having no exposed flat plane. Accordingly, the clinocompass has a structure to measure the strike and the dip suitable for the geological structure and the orientation of the outcrop having no exposed flat plane, so that the strike and the dip are usefully measured. | 05-14-2015 |
20150153289 | METHOD AND SYSTEM FOR PHOTOGRAPHING MOVING IMAGE FOR SPILL OBSERVATION OF CARBON DIOXIDE IN DEEP PART OF SEA FLOOR - Disclosed are a method and a system for photographing a moving image for a spill observation of carbon dioxide in a deep part of a sea floor, the system including: a mother boat; a wire connected to the mother boat; and a sea floor carbon dioxide photograph unit connected to the wire to move in a deep part of a sea floor according to a movement of the mother boat and continuously photograph a moving image of the deep part of the sea floor to observe a spill and movement of carbon dioxide generated in the deep part of the sea floor and a method of taking a moving image for a spill observation of carbon dioxide in a deep part of a sea floor using the same. | 06-04-2015 |
20150163381 | AERIAL SURVEY PLANE HAVING COVER FOR PROTECTING LENS OF INFRARED CAMERA FOR AERIAL SURVEY - An aerial survey plane having a cover for protecting a lens of an infrared camera for an aerial survey according to an exemplary embodiment of the present invention includes: an aerial survey observation window; an aerial survey infrared camera; at least one shock absorbing part to absorb shock applied to the aerial survey infrared camera; at least one support vertically provided on the shock absorbing part; a lifting part to lift and lower the aerial survey infrared camera; a protective cover provided between the aerial survey infrared camera and the bottom surface of the fuselage of the aerial survey plane and having a size to cover the aerial survey observation window; at least one motor to move the protective cover toward any one direction; and a controller to remotely control the opening and the closing of the protective cover. | 06-11-2015 |
20150298276 | AUTOMATIC SHEET GRINDING APPARATUS - An automatic sheet grinding apparatus includes a stationary stage positioned at a lower portion of the automatic sheet grinding apparatus, a sheet holder positioned on the stationary stage to grip the sheet, and a grinding head part having a chuck assembly fixed to the grinding head part through a spindle, spaced apart from the sheet holder, positioned on the stationary stage, and having a grinding disc attached to the chuck assembly to grind the sheet provided in the sheet holder. The grinding head part includes a thickness measuring unit to measure a thickness of the sheet, and a hardness measuring unit to measure hardness of the sheet. The automatic sheet grinding apparatus further includes rails positioned on the stationary stage and extending in parallel to each other. In this case, the sheet holder is securely and movably provided on the rails positioned on the stationary stage to grip the sheet. | 10-22-2015 |