Patent application number | Description | Published |
20150093887 | METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITSI - Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a GeO | 04-02-2015 |
20150093889 | METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS - Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeO | 04-02-2015 |
20150093914 | METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS - Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeO | 04-02-2015 |
20150279680 | DEPOSITION OF TITANIUM-ALUMINUM LAYERS - Transistors having a work function layer and methods of fabricating thereof are disclosed herein. The work function layer includes aluminum and titanium layers which are deposited in separate atomic layer deposition (ALD) operations. The depositions of the titanium layers and the aluminum layers may be separated by a purge operation or even performed in different ALD chambers. The work function layer may include alternating sets of titanium layers and sets of aluminum layers, thereby forming a nanolaminate structure. As such, a ratio of titanium to aluminum may be controlled and varied as needed throughout the thickness of the work function layer. For example, the work function layer may be titanium rich at the surface facing the gate dielectric in order to reduce or prevent diffusion of aluminum into the gate dielectric. | 10-01-2015 |
20150303057 | METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING FLUORINE INCORPORATION - Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer. | 10-22-2015 |
20150380309 | Metal-insulator-semiconductor (MIS) contact with controlled defect density - Metal-insulator-semiconductor (MIS) contacts for germanium and its alloys include insulator layers of oxygen-deficient metal oxide deposited by atomic layer deposition (ALD). The oxygen deficiency reduces the tunnel barrier resistance of the insulator layer while maintaining the layer's ability to prevent Fermi-level pinning at the metal/semiconductor interface. The oxygen deficiency is controlled by optimizing one or more ALD parameters such as shortened oxidant pulses, use of less-reactive oxidants such as water, heating the substrate during deposition, TMA “cleaning” of native oxide before deposition, and annealing after deposition. Secondary factors include reduced process-chamber pressure, cooled oxidant, and shortened pulses of the metal precursor. | 12-31-2015 |
20160118440 | Photo-Induced MSM Stack - Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof. | 04-28-2016 |
20160141335 | Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory Application - Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof. | 05-19-2016 |