Patent application number | Description | Published |
20110126899 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 06-02-2011 |
20120279564 | OXIDE EVAPORATION MATERIAL, VAPOR-DEPOSITED THIN FILM, AND SOLAR CELL - Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which Comp | 11-08-2012 |
20130153024 | MULTILAYER TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING SAME, AS WELL AS THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −2.18×[Al]+1.74≦[Ga]≦−1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −[Al]+0.30≦[Ga]≦−2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga). | 06-20-2013 |
20130200314 | ZINC OXIDE SINTERED COMPACT TABLET AND MANUFACTURING METHOD THEREOF - Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuKα radiation is taken to be I | 08-08-2013 |
20130327395 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 12-12-2013 |
20140102893 | Zn-Sn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME - [Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. | 04-17-2014 |
20140158951 | Zn-Si-O-BASED OXIDE SINTERED BODY, METHOD FOR PRODUCING THE SAME, AND TRANSPARENT CONDUCTIVE FILM - [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like. | 06-12-2014 |
20150303327 | TRANSPARENT-CONDUCTIVE-FILM LAMINATE, MANUFACTURING METHOD THEREFOR, THIN-FILM SOLAR CELL, AND MANUFACTURING METHOD THEREFOR - The invention provides a transparent-conductive-film laminate and manufacturing method therefor, transparent-conductive-film laminate being useful as a surface electrode in manufacture of a high-efficiency silicon-based thin-film solar cell, having a roughness structure excellent in light scattering, and having an excellent effect of optical confinement, and provides a thin-film solar cell using transparent-conductive-film laminate and a manufacturing method for the thin-film solar cell. Transparent-conductive-film laminate has a structure including: an indium-oxide-based transparent conductive film (I) having a film thickness of not less than 10 nm and not more than 300 nm; and a zinc-oxide-based transparent conductive film (II) having a film thickness of not less than 200 nm, and has a surface having a crystalline structure with projections and depressions mixed therein, a surface roughness (Ra) of not less than 30 nm, a haze ratio of not less than 8%, and a resistance value of not more than 30 Ω/sq. | 10-22-2015 |