Patent application number | Description | Published |
20090065145 | Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table - A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value. | 03-12-2009 |
20090078563 | Plasma Processing Apparatus And Method Capable of Adjusting Temperature Within Sample Table - A plasma processing method includes mounting a workpiece to be processed on an upper surface of a sample table disposed at a lower portion of an interior of a processing chamber disposed within a vacuum vessel and processing the workpiece by use of plasma formed within the processing chamber while applying thereto a first high frequency power for adjustment of a surface potential of the workpiece which is disposed on the sample table. The method further includes starting, prior to application of the first high frequency power, to adjust a temperature of a heat exchange medium flowing in a passage disposed inside of the sample table so as to have a predetermined value based on information of this high frequency power. | 03-26-2009 |
20140102640 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode | 04-17-2014 |
20140202995 | PLASMA HEAT TREATMENT APPARATUS - A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber | 07-24-2014 |
20140305915 | HEAT TREATMENT APPARATUS - A heat treatment apparatus, for enabling stable plasma discharge, with preventing desorption of silicon from silicon carbonite suppressing an amount of discharge of thermions therefrom, comprises a treatment chamber for heating a heating sample therein, a plate-shaped upper electrode, being disposed in the treatment chamber, a plate-shaped lower electrode, facing to the upper electrode and for producing plasma between the upper electrode, and a gas supplying means for supplying a gas into the treatment chamber, wherein the upper electrode and the lower electrode are made of a base material of silicon carbonite, and each being covered by a carbon film around thereof. | 10-16-2014 |
20150156856 | HEAT TREATMENT APPARATUS - A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode. | 06-04-2015 |
20150243486 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply. | 08-27-2015 |
20160079073 | PLASMA PROCESSING METHOD - A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed. | 03-17-2016 |
20160079107 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket. | 03-17-2016 |