Patent application number | Description | Published |
20080245297 | Material supply apparatus - A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening. | 10-09-2008 |
20080283863 | TRANSPARENT ELECTRODE - In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film. | 11-20-2008 |
20090026468 | Semiconductor Light Emitting Element - In a semiconductor light emitting element, a p-type layer ( | 01-29-2009 |
20090029499 | Method for Manufacturing Nitride Semiconductor Light Emitting Element - Provided is a method for manufacturing a nitride semiconductor light emitting element. In the method, when an isolation trench for chip isolation and for laser lift-off is formed, a degradation-free nitride semiconductor light emitting element with high luminance can be formed without doing any damages to a light emitting region. In an n type nitride semiconductor layer | 01-29-2009 |
20090057695 | Nitride Semiconductor Device - A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer includes: an n-type GaN contact layer including n-type impurity-doped GaN having an electron concentration ranging from 5×10 | 03-05-2009 |
20090097521 | Side Surface Light Emitting Semiconductor Element And Method Of Manufacturing The Same - A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×10 | 04-16-2009 |
20090127570 | Double Wavelength Semiconductor Light Emitting Device and Method of Manufacturing the Same - Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same. | 05-21-2009 |
20090146160 | GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer. | 06-11-2009 |
20090146541 | INFRARED REFLECTOR AND HEATING DEVICE HAVING THE SAME - Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector. | 06-11-2009 |
20090166607 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 07-02-2009 |
20090175306 | High-Power Red Semiconductor Laser - Provided is a high-power red semiconductor laser having a laser element in which a temperature rise is suppressed with improved heat dissipation characteristics thereof, and which accordingly needs not be enlarged in heat dissipation area. An n-AlGaInP cladding layer, an AlGaInP optical guide layer, an MQW active layer, an AlGaInP optical guide layer, a p-AlGaInP first cladding layer, an AlGaInP etching stop layer, an n-AlGaInP block layer, a p-AlGaAs second cladding layer, a p-GaAs contact layer and a p-electrode are stacked on the top surface of a tilted n-GaAs substrate. An n-electrode is formed on the back surface of the n-GaAs substrate. The heat dissipation characteristics of the laser element are improved, because the second cladding layer contains AlGaAs, which has a higher heat conductivity. | 07-09-2009 |
20090200545 | ZnO-Based Semiconductor Device - Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers | 08-13-2009 |
20090267048 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is n | 10-29-2009 |
20100019257 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion ( | 01-28-2010 |
20100040534 | RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM - Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil ( | 02-18-2010 |
20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 03-18-2010 |
20100090214 | OXIDE THIN FILM AND OXIDE THIN FILM DEVICE - Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film ( | 04-15-2010 |
20100102309 | ZNO-Based Semiconductor Element - To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode | 04-29-2010 |
20100133470 | ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE - Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a Mg | 06-03-2010 |
20100183045 | SUBSTRATE TEMPERATURE MEASURING APPARATUS AND SUBSTRATE TEMPERATURE MEASURING METHOD - A substrate temperature measuring apparatus includes: a heating source that heat a substrate; a transmission window that transmits therethrough an infrared ray in a range of a wavelength at which the infrared ray cannot transmit through the substrate; and a temperature-measuring instrument having a sensitivity range including the range of the wavelength, and measuring a substrate temperature of the substrate by analyzing an infrared ray radiated from the substrate heated by the heating source and having transmitted through the transmission window. | 07-22-2010 |
20100224892 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer | 09-09-2010 |
20100230671 | ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped Mg | 09-16-2010 |
20100237343 | ZnO-BASED THIN FILM AND SEMICONDUCTOR DEVICE - Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of Mg | 09-23-2010 |
20100270533 | ZnO-BASED SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a Mg | 10-28-2010 |
20100289004 | ZNO-BASED THIN FILM AND ZNO-BASED SEMICONDUCTOR ELEMENT - Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer | 11-18-2010 |
20100308327 | ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate. | 12-09-2010 |
20100323160 | ZnO-BASED THIN FILM - Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. | 12-23-2010 |
20110033718 | ZnO THIN FILM - Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An Mg | 02-10-2011 |
20110037067 | ZNO-GROUP SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which flat ZnO-based semiconductor layers can be grown on a MgZnO substrate having a laminate-side principal surface including a C-plane. With an Mg | 02-17-2011 |
20110114938 | ZnO SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element. | 05-19-2011 |
20110133208 | SEMICONDUCTOR ELEMENT - Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is n | 06-09-2011 |
20110180688 | PHOTOELECTRIC CONVERTER AND PROCESS FOR PRODUCING THE SAME AND SOLID STATE IMAGING DEVICE - A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided. | 07-28-2011 |
20110181765 | IMAGING DEVICE - A circuit unit is formed on a supporting member, and a solid state imaging element is formed on the circuit unit. Also, a lens mechanism is provided on a front surface of the solid state imaging element. The solid state imaging element, the circuit unit and the lens mechanism are mounted in a frame body. In addition, photoelectric conversion elements are attached to the outside of the frame body. Each of the photoelectric conversion elements is configured to have almost no light reception sensitivity to the light wavelength region of more than 300 nm and have sensitivity to the light wavelength region of 300 nm or less. The photoelectric conversion element thus configured can sense particularly flames, electric sparks and the like among ultraviolet light. | 07-28-2011 |
20120181531 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - A semiconductor element includes a semiconductor layer mainly composed of Mg | 07-19-2012 |
20120199826 | PHOTODETECTION DEVICE AND OPTICAL FILTER USED THEREIN - Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element. | 08-09-2012 |
20120213242 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material. | 08-23-2012 |
20140071525 | OPTICAL FILTER - Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element. | 03-13-2014 |
20140086592 | WIRELESS POWER SUPPLY RECEIVER-TRANSMITTER DEVICE, WIRELESS POWER SUPPLY RECEIVER AND WIRELESS POWER SUPPLY TRANSMITTER - There is provided a power supply receiver-transmitter device, a wireless power supply receiver, and a wireless power supply transmitter which allow wireless power supply transmission and wireless data transmission and reception, and improve the usability thereof. The wireless power supply receiver-transmitter device includes: a wireless power supply receiver (PR) including a power receiver unit (RU) and a first data transmitter/receiver unit (DRU); a wireless power supply transmitter (PT) including a power transmitter unit (TU); and a second data transmitter/receiver unit (DTU). The wireless power supply receiver (PR) wirelessly receives electric power transmitted from the wireless power supply transmitter (PT), and the first data transmitter/receiver unit (DRU) bidirectionally transmits and receives data to/from the second data transmitter/receiver units (DTU) through optical communications. | 03-27-2014 |
20140309537 | WIRELESS PLETHYSMOGRAM SENSOR UNIT, A PROCESSING UNIT FOR PLETHYSMOGRAM AND A PLETHYSMOGRAM SYSTEM - A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit. | 10-16-2014 |