Patent application number | Description | Published |
20100000683 | Showerhead electrode - A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate. | 01-07-2010 |
20100003824 | Clamped showerhead electrode assembly - An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses. | 01-07-2010 |
20100003829 | Clamped monolithic showerhead electrode - An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode. | 01-07-2010 |
20100044974 | EDGE RINGS FOR ELECTROSTATIC CHUCKS - A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate. | 02-25-2010 |
20110126984 | EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS - An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. | 06-02-2011 |
20120171872 | CLAMPED SHOWERHEAD ELECTRODE ASSEMBLY - An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses. | 07-05-2012 |
20120258603 | CLAMPED MONOLITHIC SHOWERHEAD ELECTRODE - An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode. | 10-11-2012 |
20130337654 | CLAMPED MONOLITHIC SHOWERHEAD ELECTRODE - An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode. | 12-19-2013 |
20140367047 | EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS - An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. | 12-18-2014 |
Patent application number | Description | Published |
20110042879 | CAM LOCK ELECTRODE CLAMP - A cam lock clamp comprises a stud having a substantially cylindrical body with a first end including a head area and a second end arranged to support one or more disc springs concentrically about the stud. A socket is arranged to mechanically couple concentrically around the stud with the head area of the stud being exposed above an uppermost portion of the socket. The socket is configured to be firmly attached to a consumable material. A camshaft has a substantially cylindrical body and is configured to mount within a bore of a backing plate. The camshaft further comprises an eccentric cutout area located in a central portion of the camshaft body. The camshaft is configured to engage and lock the head area of the stud when the consumable material and the backing plate are proximate to one another. | 02-24-2011 |
20120000605 | CONSUMABLE ISOLATION RING FOR MOVABLE SUBSTRATE SUPPORT ASSEMBLY OF A PLASMA PROCESSING CHAMBER - A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly. | 01-05-2012 |
20120000608 | C-SHAPED CONFINEMENT RING FOR A PLASMA PROCESSING CHAMBER - Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber. | 01-05-2012 |
20120003836 | MOVABLE GROUND RING FOR A PLASMA PROCESSING CHAMBER - A movable ground ring of a movable substrate support assembly is described. The movable ground ring is configured to fit around and provide an RF return path to a fixed ground ring of the movable substrate support assembly in an adjustable gap capacitively-coupled plasma processing chamber wherein a semiconductor substrate supported in the substrate support assembly undergoes plasma processing. | 01-05-2012 |
20120055632 | SHOWERHEAD ELECTRODE - A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks. | 03-08-2012 |
20120175062 | CAM-LOCKED SHOWERHEAD ELECTRODE AND ASSEMBLY - A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode. | 07-12-2012 |
20130134138 | GAS FEED INSERT IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR - A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end. | 05-30-2013 |
20130134876 | MOVABLE GROUNDING ARRANGEMENTS IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR - A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component. | 05-30-2013 |
20140103806 | PRESSURE CONTROLLED HEAT PIPE TEMPERATURE CONTROL PLATE - A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path. | 04-17-2014 |
20150041062 | PLASMA PROCESSING CHAMBER WITH REMOVABLE BODY - An apparatus for plasma processing a wafer is provided. A bottom plate is provided. A tubular chamber wall with a wafer aperture is adjacent to the bottom plate. A bottom removable seal provides a vacuum seal between the bottom plate and the tubular chamber wall at a first end of the tubular wall. A top plate is adjacent to the tubular chamber wall. A top removable seal provides a vacuum seal between a second end of the tubular wall and the top plate. A vertical seal is provided, where a vertical movement of the tubular wall allows the vertical seal to create a seal around the wafer aperture. A bottom alignment guide aligns the tubular chamber wall with the bottom plate. A top alignment guide aligns the top plate with the tubular chamber wall. A wafer chuck is disposed between the bottom plate and the top plate. | 02-12-2015 |
20150044873 | SILICON CONTAINING CONFINEMENT RING FOR PLASMA PROCESSING APPARATUS AND METHOD OF FORMING THEREOF - A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness. A portion of the silicon containing shell is removed and the annular carbon template and the annular carbon member are removed from the silicon containing shell leaving a silicon containing confinement ring wherein the silicon containing vanes are supported by the silicon containing shell of the silicon containing confinement ring. | 02-12-2015 |
20150047785 | Plasma Processing Devices Having Multi-Port Valve Assemblies - A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate. | 02-19-2015 |
20150364322 | SILICON CONTAINING CONFINEMENT RING FOR PLASMA PROCESSING APPARATUS AND METHOD OF FORMING THEREOF - A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness. A portion of the silicon containing shell is removed and the annular carbon template and the annular carbon member are removed from the silicon containing shell leaving a silicon containing confinement ring wherein the silicon containing vanes are supported by the silicon containing shell of the silicon containing confinement ring. | 12-17-2015 |