Patent application number | Description | Published |
20100108261 | LOWER ELECTRODE ASSEMBLY OF PLASMA PROCESSING CHAMBER - A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line. | 05-06-2010 |
20100309604 | Method and Apparatus for Chuck Thermal Calibration - Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process. | 12-09-2010 |
20110143462 | ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY - A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for. | 06-16-2011 |
20130068750 | HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING - A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias. | 03-21-2013 |
20130072035 | THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING - A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias. | 03-21-2013 |
20130097840 | EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY - A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance. | 04-25-2013 |
20130235506 | Method and Apparatus for Chuck Thermal Calibration - A chuck includes a first material layer having an upper surface upon which a wafer is supported. The upper surface includes portions that physically contact the wafer and portions that form gaps between the upper surface and the wafer. The chuck also includes a second material layer defined to support the first material layer. The second material layer is formed of a thermally conductive material and includes a first number of channels. The chuck also includes a second number of channels defined to direct a gas to portions of the upper surface that form gaps between the upper surface and the wafer. The chuck is characterized by a thermal calibration curve that represents a thermal interface between the upper surface and the wafer, heat transfer through the first material layer to the second material layer, and heat transfer through the second material layer to the first number of channels. | 09-12-2013 |
20130269368 | THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING - A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, includes multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated has an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias. | 10-17-2013 |
20130340942 | EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY - A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance. | 12-26-2013 |
20140110060 | ADJUSTING SUBSTRATE TEMPERATURE TO IMPROVE CD UNIFORMITY - A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for. | 04-24-2014 |
20140154819 | POWER SWITCHING SYSTEM FOR ESC WITH ARRAY OF THERMAL CONTROL ELEMENTS - A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches. | 06-05-2014 |