| Patent application number | Description | Published |
|---|
| 20080206972 | DOPED NANOPARTICLE-BASED SEMICONDUCTOR JUNCTION - A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction. | 08-28-2008 |
| 20080217602 | QUANTUM DOT LIGHT EMITTING DEVICE - An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix and, wherein the first electrode is transparent and formed on the transparent substrate, the polycrystalline inorganic light emitting layer is formed over the first electrode, and the second electrode is formed over the light emitting layer. | 09-11-2008 |
| 20090001349 | LIGHT-EMITTING NANOCOMPOSITE PARTICLES - A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer. | 01-01-2009 |
| 20090109435 | DEVICE CONTAINING NON-BLINKING QUANTUM DOTS - An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns. | 04-30-2009 |
| 20100289001 | DEVICE CONTAINING NON-BLINKING QUANTUM DOTS - An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns. | 11-18-2010 |
| 20100289003 | MAKING COLLOIDAL TERNARY NANOCRYSTALS - A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core/shell nanocrystals; and annealing the core/shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition. | 11-18-2010 |
| 20110073835 | SEMICONDUCTOR NANOCRYSTAL FILM - A film comprised of semiconductor nanocrystals having an aspect ratio less than 3:1 and a diameter greater than 10 nanometers, wherein the film has less than 5% by volume of organic material. | 03-31-2011 |
| 20110073839 | II-VI SEMICONDUCTOR NANOWIRES - A high quality II-VI semiconductor nanowire is disclosed. A plurality of II-VI semiconductor nanowires is provided, with each being fixed to a support. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end. | 03-31-2011 |
| 20110076839 | MAKING FILMS COMPOSED OF SEMICONDUCTOR NANOCRYSTALS - A method of making a film of large II-VI nanocrystals, including: providing a mixture of column II, column VI chemical precursors, and coordinating solvents selected from amines, phosphines, phosphine oxides, esters, ethers, or combinations thereof by: injecting under heat a higher molar quantity of column II chemical precursor than column VI chemical precursor; and ii) increasing the ratio of column VI to column II chemical precursors during the course of the reaction while still heating the mixture until the molar ratio of column VI chemical precursor to column II chemical precursor is in a range of 1 to 10; heating the mixture to grow large nanocrystals functionalized with coordinating ligands; washing the grown nanocrystals to remove the unreacted precursors and excess coordinating solvents; and d) depositing the large II-VI nanocrystals on a substrate in order to form the film. | 03-31-2011 |
| 20110076841 | FORMING CATALYZED II-VI SEMICONDUCTOR NANOWIRES - A method of forming II-VI semiconductor nanowires, comprises: providing a support; depositing a layer including metal alloy nanoparticles on the support; and, heating the support and growing II-VI semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the nanowires. | 03-31-2011 |
| 20110175030 | PREPARING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A method of making a colloidal solution of ternary AIAIIB nanocrystals, wherein AI and AII are independently selected from an element of periodic table subgroup IIB, when B represents an element of periodic table main group VI; or AI and AII are independently selected from an element from periodic table main group III, when B represents an element of periodic table main group V. The method providing a mixture of AI in a suitable form for the generation of a nanocrystal, and coordinating solvents including at least 30 wt % of fatty acids; heating the reaction mixture for a suitable time, adding B in a suitable form for the generation of a nanocrystal, adding AII in a suitable form for the generation of a nanocrystals; and heating the reaction mixture for a sufficient period of time at a temperature suitable for forming nanocrystal AIAIIB. | 07-21-2011 |
| 20110175054 | DEVICE CONTAINING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A device using a layer containing emitting semiconductor nanocrystals wherein each emitting nanocrystal includes a core structure wherein the cores have an aspect ratio less than 2:1 and a diameter greater than 10 nanometers and a protective shell surrounding the core | 07-21-2011 |
| 20110175059 | II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES - A plurality of core-shell semiconductor nanowires each being fixed to a support includes II-VI materials for both the cores and the shells. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end. | 07-21-2011 |
| 20110177683 | FORMING II-VI CORE-SHELL SEMICONDUCTOR NANOWIRES - A method of making II-VI core-shell semiconductor nanowires includes providing a support; depositing a layer including metal alloy nanoparticles on the support; and heating the support and growing II-VI core semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the core nanowires. The method further includes modifying the growth conditions and shelling the core nanowires to form II-VI core-shell semiconductor nanowires. | 07-21-2011 |
| 20110240099 | PHOTOVOLTAIC NANOWIRE DEVICE - Method of making a semiconductor nanowire photovoltaic device includes providing a plurality of spaced photovoltaic semiconductor nanowires on a growth substrate; applying dielectric material so that it is disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, the bottom surface being defined by the interface with the growth substrate; depositing a first electrode over the top surface of the layer of embedded semiconductor nanowires in electrical contact with the nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface; depositing a second electrode on the bottom surface so that it is in electrical contact with the semiconductor nanowires; and wherein either the first or second electrode is transparent to permit light to be transmitted through the transparent electrode and be absorbed by the photovoltaic semiconductor nanowires. | 10-06-2011 |
| 20110240953 | INTEGRATED SEMICONDUCTOR NANOWIRE DEVICE - A method of making a semiconductor nanowire device includes providing a plurality of spaced semiconductor nanowires on a growth substrate; applying a dielectric material so that it is disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded semiconductor nanowires; and depositing a second electrode on the bottom surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires. | 10-06-2011 |
