Patent application number | Description | Published |
20120321791 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed. | 12-20-2012 |
20130037873 | FILM FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode. | 02-14-2013 |
20130164946 | METHOD OF FORMING SILICON OXYCARBONITRIDE FILM - The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film. | 06-27-2013 |
20130239893 | STABILIZATION METHOD OF FILM FORMING APPARATUS AND FILM FORMING APPARATUS - A method for stabilizing a film forming apparatus, which can selectively perform a boron-containing nitride film forming process or a non-boron-containing nitride film forming process on at least one target object to be processed in a vacuum-evacuable processing chamber, the method includes performing a heat stabilization process to heat the interior of the processing chamber under an oxygen-containing gas atmosphere, between the boron-containing nitride film forming process and the non-boron-containing nitride film forming process when the non-boron-containing nitride film forming process is performed after the boron-containing nitride film forming process. | 09-19-2013 |
20130251896 | METHOD OF PROTECTING COMPONENT OF FILM FORMING APPARATUS AND FILM FORMING METHOD - Provided is a method of protecting a component of a film forming apparatus, which includes forming a film having a rough surface on a surface of a component which is provided in the interior of the processing chamber of a film forming apparatus such that the surface of the component is coated with the film having the rough surface, the component being exposed to a film forming atmosphere during a film forming process. Forming a film having a rough surface on a surface of the component is in some embodiments performed before or after the film forming process is performed on target substrate and in some cases both before and after. | 09-26-2013 |
20130260576 | METHOD OF FORMING BORON-CONTAINING SILICON OXYCARBONITRIDE FILM AND METHOD OF FORMING SILICON OXYCARBONITRIDE FILM - According to an embodiment of the present disclosure a method of forming a boron-containing silicon oxycarbonitride film on a base is provided. The method includes forming a boron-containing film on the base, and forming the boron-containing silicon oxycarbonitride film by laminating a silicon carbonitride film and a silicon oxynitride film on the boron-containing film. | 10-03-2013 |
20130323935 | FILM FORMING METHOD AND APPARATUS - A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed gas and the reaction gas into the processing chamber. | 12-05-2013 |
20140213067 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more. | 07-31-2014 |
20140295082 | DRIVING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM AND VERTICAL HEAT TREATMENT APPARATUS - A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container. | 10-02-2014 |
20140295676 | METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, VERTICAL HEAT TREATMENT APPARATUS AND NON-TRANSITORY RECORDING MEDIUM - A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas. | 10-02-2014 |