Patent application number | Description | Published |
20100096728 | Nitride semiconductor sustrate and method of fabricating the same. - A nitride semiconductor substrate includes a front surface, a rear surface on an opposite side to the front surface, and a first edge portion including a chamfered edge on the front surface. A ratio of an average surface roughness of the front surface to an average surface roughness of the first edge portion is not more than 0.01. The substrate may include a second edge portion including a chamfered edge on the rear surface. A ratio of an average surface roughness of the rear surface to an average surface roughness of the second edge portion is not more than 0.01. The first edge portion has a visible light transmissivity not more than 0.2 times that of the front surface. The second edge portion has a visible light transmissivity not more than 0.2 times that of the rear surface. | 04-22-2010 |
20120025667 | Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step. | 02-02-2012 |
20120056508 | Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K | 03-08-2012 |
20120304429 | MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE - A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode. | 12-06-2012 |
20120306314 | PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element ( | 12-06-2012 |
20130038176 | MANUFACTURING METHOD OF PIEZOELECTRIC FILM ELEMENT, PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE - A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K | 02-14-2013 |
20130187516 | PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC DEVICE - A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (Na | 07-25-2013 |
20140042875 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT - A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric film represented by a general formula of (Na | 02-13-2014 |
20140285068 | PIEZOELECTRIC THIN-FILM ELEMENT, PIEZOELECTRIC SENSOR AND VIBRATION GENERATOR - A piezoelectric thin-film element includes a substrate, a lower electrode layer formed on the substrate, a piezoelectric thin-film layer that is formed on the lower electrode layer and includes potassium sodium niobate having a perovskite structure represented by the composition formula of (K | 09-25-2014 |
20140285069 | PIEZOELECTRIC THIN-FILM MULTILAYER BODY - A piezoelectric thin-film multilayer body includes a substrate, an adhesive layer on the substrate, a lower electrode layer on the adhesive layer, and a lead-free piezoelectric thin-film layer on the lower electrode layer. The lead-free piezoelectric thin-film layer is composed of lithium potassium sodium niobate (composition formula (Na | 09-25-2014 |
20150064804 | METHOD FOR MANUFACTURING NIOBATE-SYSTEM FERROELECTRIC THIN FILM DEVICE - There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent. | 03-05-2015 |
Patent application number | Description | Published |
20090124618 | 2-MORPHOLINO-4-PYRIMIDONE COMPOUND - A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein X represents CH or N; represents a C | 05-14-2009 |
20090239864 | 6- (PYRIDINYL) -4-PYRIMIDONE DERIVATES AS TAU PROTEIN KINASE 1 INHIBITORS - A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: | 09-24-2009 |
20120095216 | 3-[1,4]OXAZEPANE-4-PYRIMIDONE DERIVATIVES - A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: | 04-19-2012 |
20120208797 | PYRIMIDONE DERIVATIVES - A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: | 08-16-2012 |
20120220591 | PYRIMIDONE COMPOUNDS - A pyrimidone derivative represented by general formula (I) or a pharmaceutically acceptable salt thereof: | 08-30-2012 |
20120252812 | 6-PYRIMIDINYL-PYRIMID-4-ONE DERIVATIVE - A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: | 10-04-2012 |
20130009519 | PIEZOELECTRIC THIN-FILM ELEMENT AND PIEZOELECTRIC THIN-FILM DEVICE - There is provided a piezoelectric thin film element, comprising: a substrate | 01-10-2013 |
20130249354 | PIEZOELECTRIC FILM-ATTACHED SUBSTRATE, PIEZOELECTRIC FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME - There is provided a piezoelectric film-attached substrate, including a piezoelectric film having a specific thickness, wherein a reflection spectrum shows a relation between a light obtained in such a way that the surface of the piezoelectric film is irradiated with an irradiation light having a specific wavelength and the irradiation light is reflected on the surface of the piezoelectric film, and a light obtained in such a way that the irradiation light is transmitted through the piezoelectric film and is reflected on the surface of the lower electrode, which is the reflection spectrum at least at one point on a center part and an outer peripheral part of the piezoelectric film, and such a reflection spectrum has at least one of the maximum value and the minimum value respectively, wherein the reflectance at least in one maximum value is 0.4 or more. | 09-26-2013 |
20140297222 | Actuator Position Calculation Device, Actuator Position Calculation Method, and Actuator Position Calculation Program - A device for calculating a position of an actuator, the actuator including a movement mechanism configured to move in one direction in proportion to a control signal generated for each minimum movement amount ΔM and a movement amount detection sensor configured to detect a movement amount of the movement mechanism in a minimum resolution ΔS, where A=ΔS/ΔM≧2, and the device includes a position calculation unit configured to calculating a position SA of the movement mechanism at a target position from the control signal at a time point T1, at which the sensor signal becomes (S0+m×ΔS) or (S0−m×ΔS), where m is a natural number of 1 or more, the control signal at the target position of the movement mechanism is denoted by M0, and the sensor signal is denoted by S0. | 10-02-2014 |
Patent application number | Description | Published |
20110121690 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K | 05-26-2011 |
20110175488 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE - To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K | 07-21-2011 |
20110187237 | PIEZOELECTRIC FILM ELEMENT, AND MANUFACTURING METHOD OF THE SAME AND PIEZOELECTRIC FILM DEVICE - A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less. | 08-04-2011 |
20130015392 | PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC FILM DEVICEAANM SUENAGA; KazufumiAACI Tsuchiura-shiAACO JPAAGP SUENAGA; Kazufumi Tsuchiura-shi JPAANM Shibata; KenjiAACI Tsukuba-shiAACO JPAAGP Shibata; Kenji Tsukuba-shi JPAANM Watanabe; KazutoshiAACI Tsuchiura-shiAACO JPAAGP Watanabe; Kazutoshi Tsuchiura-shi JPAANM Nomoto; AkiraAACI Kasumigaura-shiAACO JPAAGP Nomoto; Akira Kasumigaura-shi JPAANM Horikiri; FumimasaAACI Nagareyama-shiAACO JPAAGP Horikiri; Fumimasa Nagareyama-shi JP - There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (Na | 01-17-2013 |
20130106242 | PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC FILM DEVICE | 05-02-2013 |