Patent application number | Description | Published |
20090045438 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 02-19-2009 |
20090173968 | Field Effect Transistor - A semiconductor device | 07-09-2009 |
20090230429 | Field effect transistor - A field effect transistor ( | 09-17-2009 |
20090230430 | Field effect transistor - A field effect transistor includes a layer structure made of compound semiconductor ( | 09-17-2009 |
20090267114 | FIELD EFFECT TRANSISTOR - A field effect transistor | 10-29-2009 |
20100155779 | Field Effect Transistor - In a field effect transistor, a Group III nitride semiconductor layer structure containing a hetero junction, a source electrode | 06-24-2010 |
20100224910 | FIELD EFFECT TRANSISTOR - Disclosed is an HJFET | 09-09-2010 |
20100270559 | FIELD EFFECT TRANSISTOR AND PROCESS FOR MANUFACTURING SAME - A field effect transistor includes: a channel layer | 10-28-2010 |
20100276732 | SEMICONDUCTOR DEVICE - A semiconductor device includes a lower barrier layer | 11-04-2010 |
20100327318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer ( | 12-30-2010 |
20110006345 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa | 01-13-2011 |
20110006346 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed Al | 01-13-2011 |
20110241075 | BIPOLAR TRANSISTOR - A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [ | 10-06-2011 |
20110260217 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region. | 10-27-2011 |
20110278586 | BIPOLAR TRANSISTOR - A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains In | 11-17-2011 |
20110284865 | HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETEROJUNCTION FIELD EFFECT TRANSISTOR, AND ELECTRONIC DEVICE - A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layer | 11-24-2011 |
20110291160 | FIELD EFFECT TRANSISTOR - A field effect transistor includes a nitride-based semiconductor multi-layer structure, a source electrode ( | 12-01-2011 |
20110297954 | SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved. | 12-08-2011 |
20120217547 | FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT - Disclosed is an HJFET | 08-30-2012 |
20130099245 | FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE - The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer | 04-25-2013 |
20130113028 | SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR - A semiconductor device comprises a substrate | 05-09-2013 |
20140367743 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 12-18-2014 |