Patent application number | Description | Published |
20090051280 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer that is formed between the first electrode and the second electrode and includes a light-emitting layer. The second electrode includes a conductive protection layer that is formed on the organic layer so as to protect the organic layer and a conductive main electrode layer that is formed on the protection layer. | 02-26-2009 |
20090202708 | Apparatus for Manufacturing Light Emitting Elements and Method of Manufacturing Light Emitting Elements - An apparatus of manufacturing a light emitting element having a plurality of layers including an organic layer on a substrate to be processed is disclosed. The apparatus includes a plurality of process chambers to which the substrate to be processed is transferred in series, wherein the plurality of process chambers are substantially linearly connected to one another and wherein adjacent two of the process chambers are filled with gas that does not react with a layer on the substrate to be processed when the substrate to be processed is transferred between the two process chambers. | 08-13-2009 |
20090206728 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A substrate process apparatus that forms a light emitting device configured with an organic layer including a light emitting layer on a substrate to be processed, the organic layer being formed between a first electrode and a second electrode, includes an organic layer forming apparatus wherein the organic layer is formed on the first electrode formed on the substrate to be processed; an electrode forming apparatus wherein the second electrode is formed on the organic layer; and an etching apparatus wherein the organic layer is etched. | 08-20-2009 |
20090246941 | DEPOSITION APPARATUS, DEPOSITION SYSTEM AND DEPOSITION METHOD - A deposition system is provided to avoid cross contamination in each layer formed in a manufacturing process of organic electroluminescent device, etc., and also provided to reduce footprint. Provided is an apparatus | 10-01-2009 |
20100175989 | DEPOSITION APPARATUS, DEPOSITION SYSTEM AND DEPOSITION METHOD - A deposition system is provided to avoid cross contamination in each layer formed in a manufacturing process of organic electroluminescent device and the like, and to reduce footprint and to enhance productivity. Provided is a deposition apparatus | 07-15-2010 |
20100326511 | SOLAR CELL WHEREIN SOLAR PHOTOVOLATIC THIN FILM IS DIRECTLY FORMED ON BASE - Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film. | 12-30-2010 |
Patent application number | Description | Published |
20090314635 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND ORGANIC ELECTRON DEVICE - An organic film and a metal electrode (a cathode film) are formed on an indium tin oxide (ITO) of a substrate. The plasma processing apparatus supplies at least one of a predetermined processing gas for chemically reacting with the organic film and a predetermined inert gas for sputtering the organic film from a gas supply source into a processing container, wherein the metal electrode is used as a mask. The plasma processing gas also supplies microwaves from a microwave generator as energy for exciting the at least one of the predetermined processing gas and the predetermined inert gas. The plasma processing apparatus generates plasma from the at least one of the predetermined processing gas and the predetermined inert gas supplied to the processing container by using electric field energy of the microwaves, and etches the organic film by using the generated plasma. | 12-24-2009 |
20120211165 | SAMPLE TABLE AND MICROWAVE PLASMA PROCESSING APPARATUS - A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and includes: an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion. Also, a microwave plasma processing apparatus includes the sample table. | 08-23-2012 |
20130029494 | PLASMA ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PLASMA ETCHING DEVICE - Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O | 01-31-2013 |
Patent application number | Description | Published |
20120267048 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector. | 10-25-2012 |
20130008607 | ANTENNA, DIELECTRIC WINDOW, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window | 01-10-2013 |
20140166205 | PROCESS MONITORING DEVICE FOR USE IN SUBSTRATE PROCESS APPARATUS, PROCESS MONITORING METHOD AND SUBSTRATE PROCESSING APPARATUS - A process monitoring device | 06-19-2014 |