Patent application number | Description | Published |
20090050933 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device | 02-26-2009 |
20090160033 | SEMICONDUCTOR OPTICAL ELEMENT - A light receiving element | 06-25-2009 |
20100032839 | ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-11-2010 |
20100200863 | ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THOSE - A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11. | 08-12-2010 |
20100279457 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-RECEIVING DEVICE - Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device | 11-04-2010 |
20100327385 | SEMICONDUCTOR LIGHT-RECEIVING ELEMENT - The Si waveguide | 12-30-2010 |
20120028456 | ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-02-2012 |
20140376930 | OPTICAL RECEIVER AND METHOD FOR CONTROLLING OPTICAL RECEIVEROPTICAL RECEIVER, METHOD FOR CONTROLLING OPTICAL RECEIVER, AND METHOD FOR RECEIVING LIGHT - In an optical receiver which is compatible with a plurality of signal channels, it is difficult to receive signals properly because a variation in receiving light sensitivity of a photoelectric conversion unit occurs between a plurality of signal channels, therefore, an optical receiver according to an exemplary aspect of the invention includes an optical processing circuit processing input signal light to have been input and outputting a plurality of output signal light beams; and a plurality of photoelectric conversion means for receiving the plurality of output signal light beams respectively and outputting electric signals, wherein the photoelectric conversion means includes an avalanche photodiode which can control a multiplication factor of an output current as the electric signal by means of an applied voltage; and the avalanche photodiode operates with a driving voltage by which the output currents in the plurality of photoelectric conversion means become almost the same. | 12-25-2014 |
Patent application number | Description | Published |
20100290023 | METHOD FOR DETECTING SUBSTRATE POSITION OF CHARGED PARTICLE BEAM PHOTOLITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM PHOTOLITHOGRAPHY APPARATUS - One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography apparatus includes placing a substrate on a stage that can be moved in an X-direction and a Y-direction; measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device; computing a barycentric position of the reflected light when the stage is moved in the X-direction; measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device; computing a barycentric position of the reflected light when the stage is moved in the Y-direction; and computing the positions of the substrate from the position measurement results of the stage and the computed barycentric position. | 11-18-2010 |
20130082193 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to one aspect of the present invention includes a substrate cover attachment/detachment unit to attach or detach a substrate cover that covers a whole periphery of a substrate being a writing target from an upper part, to/from the substrate, a writing unit to write a pattern on the substrate, in a state where the substrate cover is attached to the substrate, by a charged particle beam, a position measurement unit, before and after writing by the writing unit, to measure a position of the substrate cover in a state attached to the substrate, at a predetermined measurement position, and a correction unit, with respect to a position of the substrate to which the substrate cover is attached, to correct a positional deviation amount between a position of the substrate cover measured after writing and a position of the substrate cover measured before writing. | 04-04-2013 |